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  • 1
    Electronic Resource
    Electronic Resource
    Harmonic mixing at mm waveband in a high temperature superconducting grain boundary Josephson junction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2286-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a high Tc superconducting grain boundary Josephson junction, harmonic mixing experiments in the mm waveband were carried out, aiming at as large a harmonic number and as high a signal frequency as possible. The dependencies of intermediate frequency output on dc bias, harmonic number, frequency of local oscillator (LO), and other parameters were carefully studied. Until now, our best result was the mixing between the signal at 95 GHz and the 105th harmonic of LO at about 900 MHz. Preliminary experiments using a high Tc harmonic mixer and phase-locking loop were tried to stabilize the frequency of a mm wave source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356293
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  • 2
    Electronic Resource
    Electronic Resource
    A full electron LMTO-ASA study of electronic band structure and magnetic properties for RFe11TiNx (R=Y, Nd, Sm; x=0,1) : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6751-6753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band structure and magnetic properties are studied for RFe11TiNx (R=Y, Nd, Sm; x=0,1) rare-earth iron intermetallic compounds using the linear muffin tin orbital with the atomic sphere approximation (LMTO-ASA) method. In order to elucidate the role played by the rare-earth atoms in these compounds, a full electron calculation is performed using a semirelativistic spin-polarized LMTO-ASA method in the local spin density approximation (LSDA) regime. The 4f electrons of the rare-earth atoms are considered to be valence electrons in the self-consistent calculations. For NdFe11TiN, a calculation in which the 4f electrons are treated as core-frozen states is also performed, and is compared with the full electron calculation. The effects of N atoms in these compounds are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358151
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  • 3
    Electronic Resource
    Electronic Resource
    In adatom migration studies by reflection high-energy electron diffraction oscillations on vicinal InAs(001) surfaces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2333-2337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transition from growth by the formation and coalescence of two-dimensional clusters to the growth by step advancement on vicinal InAs(001) surfaces has been examined during molecular-beam epitaxy by the measurements of reflection high-energy electron diffraction oscillations. The growth mode transition is compared with results from vicinal GaAs(001) surfaces and qualitatively analyzed on the basis of the surface migration and attachment kinetics of In adatoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353138
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  • 4
    Electronic Resource
    Electronic Resource
    A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1429-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation of silicon dioxide (SiO2) thin films by plasma anodization is a promising low temperature (≤600 °C) silicon oxidation technique. This paper investigates the electron trapping and thermal detrapping properties of the plasma grown oxide and compares them with those of the conventional thermal oxide. The avalanche electron injection measurement shows that the electron trapping in the plasma oxide is more severe. The two electron capture cross sections detected in the plasma oxide are of the order of 10−15 and 10−17 cm2, respectively. The former is absent in the thermal oxide and is a feature of oxides prepared at low temperature. The latter is also found in thermal oxide, but its chemical nature is different. Both of them are located near SiO2/silicon interface, indicating that they are related to the intermediate layer. The electron detrapping process in the plasma oxide is different from that in the thermal oxide and has a linear dependence on the logarithmic time. The detrapping is thermally activated with an activation energy of 0.63–0.75 eV. The above traps in plasma oxide can be removed by a high temperature (e.g., 960 °C) post-oxidation annealing (POA) in an inert ambient. After such a POA, the electron trapping in plasma oxide is similar to that in thermal oxides. Some speculation on the trap formation processes is included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351703
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  • 5
    Electronic Resource
    Electronic Resource
    Study of dynamics of diffusion and cluster formation of copper deposition on polyimide by optical second-harmonic generation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2655-2662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that optical second-harmonic generation (SHG) can be successfully used for in situ study of metal/polymer interfaces. With this SHG technique, Cu cluster formation on polyimide by surface diffusion and Cu diffusion into polyimide have been investigated. The diffusion coefficients of Cu clusters into polyimide at various temperatures have been determined from the measured decay of SHG signal with time. The effects of temperature, cluster size, and surface modification on diffusion have also been examined. For T 〈 Tg, the surface diffusion of Cu on polyimide to form clusters dominates over the diffusion into the bulk. The latter process becomes competitive with increasing temperature. When T (approximately-greater-than) Tg, few large-size Cu clusters can be formed on the polyimide surface. Cu diffusion into polyimide bulk can be greatly impeded by either a monolayer of Ti or by Cu clusters implanted in polyimide beforehand. In this case, Cu can wet the modified surface and form an interface between Cu and polyimide with good adhesion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351037
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  • 6
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 7
    Electronic Resource
    Electronic Resource
    Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 725-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron trap generation in thermally grown silicon dioxide (SiO2) during Fowler–Nordheim (FN) stress is investigated by using an aluminium-gated capacitor structure. The generated electron traps are characterized by the avalanche electron injection technique. The experimental results support the model that electron trapping in oxide follows the first-order kinetics and may have multiple-capture cross sections. It is found that both donorlike (positive charge related) and acceptorlike (neutral before capturing electron) traps are generated and they behave differently. The donorlike trap is not stable at or above room temperature and its effective density saturates as the stressing time increases, while the opposite is true for the acceptorlike trap. The electron-capture cross section of donorlike trap spreads from 10−18 to over 10−14 cm2, but the capture cross section of the generated acceptorlike trap is limited in the range of (4.5–9)× 10−17 cm2. The acceptorlike trap is generated by the interaction between free holes and SiO2 and hole trapping leads to donorlike traps. The relation between the generated trap and the as-grown trap will be discussed. Comparison of the electron traps generated by FN stress with those by irradiation and hot hole injection indicates that the electron trap generation under these different stressing conditions is controlled by the same mechanism. The necessary condition for electron trap generation is the presence of holes in the oxide, rather than a high electrical field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351334
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  • 8
    Electronic Resource
    Electronic Resource
    A reflection high-energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5168-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction was used to monitor Si(111) growth during gas source molecular beam epitaxy using disilane (Si2H6). Depending on the substrate temperature, the growing Si(111) surface was found to exhibit hydrogenated δ(7×7), (1×1), (5×5), and (7×7) reconstructions. Within the substrate temperature range of 490 to 560 °C where growth proceeded two-dimensionally, clear and well-defined intensity oscillations could be observed in the [21¯0] azimuths. Since consecutive atomic layers on the Si(111) surface are nonequivalent, the oscillation periods were found to correspond to bilayer growth. In the two-dimensional (2D) growth regime, the oscillation frequencies, and hence the growth rates deduced, were found to increase with increasing substrate temperature and flow rate of Si2H6. At higher temperatures, there was a change from 2D layer-by-layer growth to step propagation and consequently, the intensity oscillations were weak or absent. At low temperatures (〈400 °C) where no dissociative adsorption of Si2H6 occurred, intensity oscillations were not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350572
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of growth interruption on inverted interface quality in single AlAs-GaAs quantum wells grown by molecular beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5595-5600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three techniques have been combined to correlate interface morphology and optical properties of single AlAs-GaAs quantum wells grown by molecular beam epitaxy (MBE) with and without growth interruption at the inverted (GaAs on AlAs) interface. Surface recovery and interface formation were monitored in situ by reflection high energy electron diffraction, optical properties were assessed by photoluminescence excitation (PLE) spectroscopy and the results compared with a Monte Carlo simulation of MBE growth, extended to evaluate PLE linewidths. Criteria for linewidth reduction have been established and interface morphology described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346970
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  • 10
    Electronic Resource
    Electronic Resource
    Picosecond optical parametric amplification in lithium triborate (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the performance of a type-I lithium triborate (LBO) optical parametric amplifier pumped by 15 ps, 355 nm laser pulses. It is seen that with proper design, LBO can be as efficient as barium borate for such an application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104692
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