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  • 1
    Electronic Resource
    Electronic Resource
    Effects of annealing, using a plasma-excited chemical vapor deposition SiN film as a cap, on the carrier density of AlGaAs/GaAs heterostructures and Si-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4401-4406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate how the mobility and carrier density of AlGaAs/GaAs two-dimensional electron gas are influenced by the fabrication process with plasma-excited chemical vapor deposition (plasma-CVD) SiN film. These properties are greatly reduced by annealing with plasma-CVD SiN film as a cap but are restored by reannealing after removing the SiN film. We further use capacitance-voltage measurements to investigate the influence of this same process on a more simplified structure, Si-doped GaAs layer. Annealing with a plasma-CVD SiN film changes the defect density of Si-doped GaAs in two, temperature dependent ways: annealing below 380 °C reduces deposition damage, and annealing above 300 °C produces new defects, which might be caused by the film stress. These new defects can be reduced by reannealing after removing the SiN film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359846
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical transport properties and confinement potential analysis of buried AlGaAs/GaAs quantum wires (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2330-2335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried wires with lateral potential barriers provided by AlGaAs/GaAs heterointerfaces have been fabricated by wet etching and metalorganic chemical vapor deposition regrowth. Burying the wire was proven to enhance the electrical transport properties; for example, it decreased the critical width and increased the subband energy separation. Two-dimensional simulation using the Poisson equation was performed to obtain the potential profile of both as-etched and buried wires. The quantum energy levels corresponding to the lateral confinement were calculated for the obtained potential profiles. The calculated energy separations agreed well with the experimental ones and the subband energy separation of the buried wire was larger than that of the as-etched wire for the same effective width. These results show that burying wire is effective for creating strong lateral confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357605
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  • 3
    Electronic Resource
    Electronic Resource
    Al/n-GaAs Schottky barrier height modified with rare-earth metal interlayer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6575-6577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier heights are measured by current-voltage and capacitance-voltage methods for Al/n-GaAs contacts with a rare-earth metal (Sm, Dy, Yb) interlayer, which forms a stable alloy with Al but does not form an electrically active site in GaAs. The Schottky barrier height for each contact is found to be lowered with diode factor n〈1.06, compared to ideal Al/n-GaAs and rare-earth metal/n-GaAs contacts. The mechanisms for the lowering are discussed from standpoints of alloy formation and diffusion across the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342032
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4332-4336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant tunneling through single InAs quantum dots embedded in an n-GaAs/i-Al0.38Ga0.62As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. Many sharp luminescence lines which originated from single quantum dots were observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line was investigated. The peak intensity showed triangular dependence which was similar to the current–voltage characteristics of electron resonant tunneling from three dimension to zero dimension. When the bias voltage was increased, the peak energy slightly shifted to a lower energy indicating the existence of Stark effect, and the linewidth slightly increased. The higher the luminescence energy was, the broader the linewidth was. This result agrees with the calculated resonant level width. The lifetime of resonant states was estimated to be 2.4–27 ps for luminescence linewidth of 250–22 μeV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373074
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  • 5
    Electronic Resource
    Electronic Resource
    Time-of-flight measurement for electron velocity in p-AlGaAs/GaAs/AlGaAs at a high field (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2310-2312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-of-flight measurements using a picosecond pulsed laser are made for a p-AlGaAs/GaAs/AlGaAs double heterostructure to successfully obtain the velocity-electric field relationship for photoexcited electrons at room temperature. In the high electric field region, velocity enhancements are observed, which have never been reported until now. Possible mechanisms, which attribute to the velocity enhancement, are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102047
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  • 6
    Electronic Resource
    Electronic Resource
    Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3678-3689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band gap and excitonic resonance energies of high-quality bulk single crystals, polycrystalline thin films, and epitaxial layers of CuInSe2 and CuGaSe2 were determined as a function of temperature by means of photoreflectance, optical absorption (OA), and photoluminescence measurements. OA spectra were fit including excitonic absorption from low temperature up to room temperature (RT). The band gap energy of 1.032 eV and free exciton (FE) resonance energy of 1.024 eV were obtained at RT for strain-free CuInSe2 giving an exciton binding energy of 7.5 meV. The band gap energy of both CuInSe2 and CuGaSe2 was found to be essentially independent of the molar ratio of Cu to group-III atom (Cu/III) for near-stoichiometric and Cu-rich samples. The disappearance of the FE absorption in the In-rich (Cu/In〈0.88) CuInSe2 thin films was explained by plasma screening of Coulomb interactions. A slight decrease in the band gap energy of the In-rich films was attributed to a degradation of film quality such as high-density defects, grains, and structural disordering. The fundamental band gap energy in strained CuInSe2 and CuGaSe2 epilayers was shown to decrease due to in-plane biaxial tensile strain. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366588
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  • 7
    Electronic Resource
    Electronic Resource
    Urbach–Martienssen tails in a wurtzite GaN epilayer (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3440-3442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of an interaction between the electronic and lattice systems on the optical spectra of a wurtzite GaN epilayer were investigated. The exponentially increasing absorption tail was well explained as an Urbach–Martienssen tail, giving the characteristic phonon energy of 30 meV. The result indicates that few longitudinal optical phonons contribute to the exciton-phonon coupling even at room temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119196
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  • 8
    Electronic Resource
    Electronic Resource
    Three-terminal conductance modulation of a quantum interference device using a quantum wire with a stub structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3595-3597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of a three-terminal quantum interference device using a quantum wire with a novel stub structure. The device achieves clear conductance modulation as a function of stub-tuner gate voltage, which controls the stub length independently of the Fermi energy. The observed conductance oscillations can be consistently explained by the quantum interference of electron waves in the stub.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110107
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Grinding Temperature on Hydroperoxide and Off-flavor Contents during Soymilk Manufacturing Process (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 69 (2004), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Hydroperoxides and n-hexanal of soymilk made at different temperatures in the soybean grinding process were investigated. Both hydroperoxides and n-hexanal showed maximum amounts at 30°C, 37.78 μmol/g, and 1.94 mg/g, respectively. However, at 3°C and 80°C, amounts of hydroperoxides were about half of that at 30°C. N-hexanal showed high correlation with hydroperoxides except for at 80°C. It suggests that controlling the grinding temperature is effective to reduce hydroperoxidation and off-flavor content. Protein solubility an important index of soymilk, was decreased as the temperature increased. Grinding soybeans at low temperature is considered an economical method to produce soymilk having less off-flavor and high protein.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2004.tb13379.x
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  • 10
    Electronic Resource
    Electronic Resource
    Study of mammalian selenocysteyl-tRNA synthesis with [^7^5Se]HSe^-
    Amsterdam : Elsevier
    FEBS Letters 289 (1991), S. 59-63 
    Details
    ISSN: 0014-5793
    Keywords: Selenium, tRNA ; Selenocysteine, tRNA ; selenocysteine synthase ; tRNA, opal suppressor ; tRNA, selenocysteine ; tRNA, serine
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0014-5793(91)80908-L
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