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  • 1
    Electronic Resource
    Electronic Resource
    Formation of Grown-in Defects in CZ-Si Crystals (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 57-58 (July 1997), p. 449-458 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.57-58.449.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of annealing, using a plasma-excited chemical vapor deposition SiN film as a cap, on the carrier density of AlGaAs/GaAs heterostructures and Si-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4401-4406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate how the mobility and carrier density of AlGaAs/GaAs two-dimensional electron gas are influenced by the fabrication process with plasma-excited chemical vapor deposition (plasma-CVD) SiN film. These properties are greatly reduced by annealing with plasma-CVD SiN film as a cap but are restored by reannealing after removing the SiN film. We further use capacitance-voltage measurements to investigate the influence of this same process on a more simplified structure, Si-doped GaAs layer. Annealing with a plasma-CVD SiN film changes the defect density of Si-doped GaAs in two, temperature dependent ways: annealing below 380 °C reduces deposition damage, and annealing above 300 °C produces new defects, which might be caused by the film stress. These new defects can be reduced by reannealing after removing the SiN film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359846
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  • 3
    Electronic Resource
    Electronic Resource
    Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3678-3689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band gap and excitonic resonance energies of high-quality bulk single crystals, polycrystalline thin films, and epitaxial layers of CuInSe2 and CuGaSe2 were determined as a function of temperature by means of photoreflectance, optical absorption (OA), and photoluminescence measurements. OA spectra were fit including excitonic absorption from low temperature up to room temperature (RT). The band gap energy of 1.032 eV and free exciton (FE) resonance energy of 1.024 eV were obtained at RT for strain-free CuInSe2 giving an exciton binding energy of 7.5 meV. The band gap energy of both CuInSe2 and CuGaSe2 was found to be essentially independent of the molar ratio of Cu to group-III atom (Cu/III) for near-stoichiometric and Cu-rich samples. The disappearance of the FE absorption in the In-rich (Cu/In〈0.88) CuInSe2 thin films was explained by plasma screening of Coulomb interactions. A slight decrease in the band gap energy of the In-rich films was attributed to a degradation of film quality such as high-density defects, grains, and structural disordering. The fundamental band gap energy in strained CuInSe2 and CuGaSe2 epilayers was shown to decrease due to in-plane biaxial tensile strain. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366588
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  • 4
    Electronic Resource
    Electronic Resource
    Urbach–Martienssen tails in a wurtzite GaN epilayer (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3440-3442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of an interaction between the electronic and lattice systems on the optical spectra of a wurtzite GaN epilayer were investigated. The exponentially increasing absorption tail was well explained as an Urbach–Martienssen tail, giving the characteristic phonon energy of 30 meV. The result indicates that few longitudinal optical phonons contribute to the exciton-phonon coupling even at room temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119196
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray absorption of bromonaphthalene dissolved in supercritical fluid xenon (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1004-1006 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The results of Br K-edge X-ray absorption measurements of 1-bromonaphthalene dissolved in supercritical fluid Xe are reported. As the pressure of Xe confined in a high-pressure cell is increased, the absorption spectrum of bromonaphthalene gradually appears, showing that Xe in the supercritical fluid state solvates the bromonaphthalene molecule. The spectrum of the dissolved sample shows a remarkable difference from that of the pure liquid sample in the near-edge region of the X-ray absorption spectrum, reflecting the interaction of the solute material with solvent Xe. Ab initio full multiple-scattering calculations can reproduce the spectral features qualitatively. A large value of the Debye–Waller factor must be introduced to give the best fit, corresponding to a large degree of spatial disorder and violent thermal vibration of the Xe atoms around the Br atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049597018268
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  • 6
    Electronic Resource
    Electronic Resource
    Inhibition of Borna disease virus replication by ribavirin in persistently infected cells (1998)
    Springer
    Archives of virology 143 (1998), S. 2039-2044 
    Details
    ISSN: 1432-8798
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary.  Ribavirin at concentrations from 1 to 10 μg/ml exihibited inhibitory effects on transcription of Borna disease virus (BDV) in persistently infected cells. Our present study indicates that ribavirin is a candidate anti-BDV drug.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s007050050440
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  • 7
    Electronic Resource
    Electronic Resource
    Transcriptional control of Borna disease virus (BDV) in persistently BDV-infected cells (1999)
    Springer
    Archives of virology 144 (1999), S. 1937-1946 
    Details
    ISSN: 1432-8798
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary.  Regulation of viral RNA levels in infected cells is considered important in the investigation of viral transcription and replication. Amounts of Borna disease virus (BDV) RNAs were increased in confluent persistently BDV-infected MDCK cells (MDCK/BDV) cells, while maintained at low levels in growing cells. The amount of 1.9-kb RNA without cap formation and polyadenylation at the 5′ and 3′ ends respectively were remarkably increased (200% per day) in confluent MDCK/BDV cells. Both the full-length genomic and anti-genomic RNAs were increased accompained by 1.9-kb RNA, suggesting the transcription of the 1.9-kb RNA was important for replication of BDV. Ribavirin has an inhibitory effect on replication and transcription of BDV at concentrations from 1 to 10 μg/ml [Mizutani T et al., Arch Virol (1998)143: 2 039–2 044]. BDV transcripts were decreased with ribavirin treatment and increased after its removal which indicated that ribavirin has a reversible inhibitory effect on BDV transcription. Furthermore, BDV transcription was also decreased by two agents, RMNPA and EICAR, which selectively inhibit enzyme activity related to cap formation at the 5′ end of mRNA. On the contrary, when the growing MDCK/BDV cells were treated with actinomycin D, transcripts of BDV RNA were increased for 24 h. These agents and culture conditions in this study were found to be useful tools for up-and down-regulation of BDV transcription in persistently BDV-infected cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s007050050716
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  • 8
    Electronic Resource
    Electronic Resource
    Heavy-to-Light Form Factors in the Quark Model with Infrared Heavy-Quark Propagators (1998)
    Springer
    Few body systems 24 (1998), S. 201-212 
    Details
    ISSN: 1432-5411
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We calculate the heavy-to-light form factors in a relativistic quark model with infrared heavy-quark propagators. Their -dependence in the physical region is defined by two parameters: the “infrared” parameter characterizing the infrared behaviour of the heavy quark and the mass difference of the heavy meson and the heavy quark . It is found that the values of the and form factors at are in excellent agreement with the available experimental data and other approaches whereas for transitions these values are found to be larger than those of several other models. The obtained form factors are used to calculate the widths of the semileptonic decays of and mesons. A comparison of our results with available experimental data and other approaches is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s006010050086
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  • 9
    Electronic Resource
    Electronic Resource
    Heavy-Quark Limit in a Relativistic Quark-Confinement Model (1996)
    Springer
    Few body systems 20 (1996), S. 49-68 
    Details
    ISSN: 1432-5411
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We have studied the weak decay constants and the Isgur-Wise form factors of the B and D mesons in the heavy-quark limit by employing a relativistic 2quark-confinement model. It is an attempt to improve our previous work within the same line of thinking, but by incorporating a couple of novel aspects. First, the infrared behaviour of the heavy quark is considered by modifying its conventional propagator in terms of a single parameter ν. Second, the mass difference between the heavy meson and heavy quark E = m H – M Q has been included. It is found that the weak decay constants depend strongly on this mass difference E with a relatively mild ν dependence. As for the Isgur-Wise function it is controlled more sensitively by the infrared parameter ν, leading to its suppression at maximum meson recoil.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s006010050031
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  • 10
    Electronic Resource
    Electronic Resource
    Self-energy of heavy quark (1995)
    Springer
    The European physical journal 68 (1995), S. 639-645 
    Details
    ISSN: 1434-6052
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We demonstrate that to calculate the selfenergy of a heavy quark in the heavy quark limit (or the heavy fermion limit in what is called the Baryon Chiral Perturbation Theory), the use of standard dimensional regularization provides only the quantum limit: opposite to the heavy quark (or classical) limit that one wishes to obtain. We thus devised a standard ultraviolet/infrared regularization procedure in calculating the one- and two-loop contributions to the heavy quark self-energy in this limit. Then the one-loop result is shown to provide the standard classical Coulomb self-energy of a static colour source that is linearly proportional to the ultraviolet cutoff Λ. All the two-loop contributions are found to be proportional to Λ In (Λ/γ) where γ is the infrared cutoff. Often only the contribution from the bubble (light quarks, gluon and ghost) insertion to the gluon propagator has been considered as theO(α s ) correction to the Coulomb energy to this order. Our result shows that other contributions are of the same magnitude, thus have to be taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01565263
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