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  • 1
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of CaS:Eu and SrS:Eu phosphors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4546-4549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phosphors of alkali-earth sulfides SrS:Eux (x=0.05 and 0.10 mole per mole of SrS), SrSO:Eux (x=0.05), and CaS:Eux (x=0.0005, 0.05, and 0.10) were studied by x-ray photoelectron spectroscopy. The CaS:Eu phosphors were found to be stabilized against atmospheric water vapor and carbon dioxide by annealing at high temperature for several hours. The S 2p core level shows that the chemical state of sulfur changes abruptly from −2 to +6 between the annealing temperature of 900 and 1100 °C. The Ca core level, on the other hand, does not show much change depending on the annealing temperature. From the Eu 3d core-level spectra of SrS:Eux and CaS:Eux (x=0.10) phosphors, we confirm that the valence state of Eu in these phosphors is Eu3+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352799
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  • 2
    Electronic Resource
    Electronic Resource
    A design of a nanometer size metal particle generator: Thermal decomposition of metal carbonyls (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4366-4369 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a method which can produce both pure and alloy nanometer size metal particles in a large scale. This method combines a thermal decomposition of metal carbonyls with a collision induced clustering. Metal carbonyls are thermally decomposed with a hot filament and resultant bare metal atoms undergo collisions to produce nanometer size metal particles. This method requires a very simple experimental setup even though it is a high efficiency production method. Using this method, we have produced, high purity Fe, Mo, and alloy Fe/Mo nanometer size metal particles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150081
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  • 3
    Electronic Resource
    Electronic Resource
    Concentration dependent photoluminescence of Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) of Te-doped In0.5Ga0.5P epilayers grown by the liquid phase epitaxy technique has been investigated as a function of carrier concentration. The PL results are interpreted using a model taking into account nonparabolicity of the conduction band. Both the band filling as well as band tailing due to the Coulomb interaction of free carriers with ionized impurities and band shrinkage due to the exchange interaction between free carriers are considered in order to properly portray the observed features of the PL spectra. The theoretical calculations are in satisfactory agreement with the observed PL results. The PL line shape is well explained by a direct transition with a simple k-selection rule up to a carrier concentration of 2.0 ×1018 cm−3. Above the carrier concentration of 2.0 ×1018 cm−3, on the other hand, it is properly interpreted in terms of non-k-conserving transitions that arise from the indirect recombination of electrons in a highly filled conduction band. It was found that a concentration dependent gap shrinkage due to the exchange interaction in Te-doped In0.5Ga0.5P at 17 K is described by the relation Ece=2.34×10−8 n1/3 (eV). The concentration dependent effective mass has also been calculated using Kane's three band model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365754
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  • 4
    Electronic Resource
    Electronic Resource
    Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2014-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sn-doped In0.5Ga0.5P epilayers, grown on semi-insulating (100) GaAs substrates by the liquid phase epitaxy technique, have been investigated using photoluminescence and Hall effect measurements from 15 to 300 K. The Sn dopant in InGaP shows amphoteric behavior with a compensation ratio of ∼0.4–0.6. Transitions involving shallow Sn acceptors have been identified through photoluminescence measurements for the first time and the ionization energy of Sn was determined to be 57 meV, which is in good agreement with the hydrogenic acceptor value. It was also found that the Sn shallow donor has an ionization energy 17–12 meV with increasing carrier concentrations through Hall measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366931
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  • 5
    Electronic Resource
    Electronic Resource
    Transport property of In0.5Ga0.5P layers grown by liquid phase epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1527-1530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependent Hall mobility and carrier concentration of In0.5Ga0.5P epilayers grown on (100) semi-insulating GaAs substrates by the liquid phase epitaxy technique have been investigated in the range of 77–300 K. The electron mobility and carrier concentration were of the order of 806 cm2 V−1 s−1, and 6.5×1016 cm−3, respectively at 300 K. The model (taking into account ionized impurity, alloy and space-charge scattering mechanisms) is considered in order to properly portray the observed features of the electron mobility results. The theoretical prediction is in good agreement with the observed results. The electron mobility was limited by ionized scattering up to 120 K and was also limited by alloy, space-charge scattering up to 300 K. It was found that the space-charge scattering has a stronger temperature dependence, T−1, than the usual T−0.5 and the In0.5Ga0.5P epilayer was heavily compensated for having an acceptor concentration of NA=8.5×1016 cm−3 with a compensation ratio of 0.5. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366861
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  • 6
    Electronic Resource
    Electronic Resource
    Structural evolution of W nano clusters with increasing cluster size (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 7402-7404 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have recorded the x-ray diffraction (XRD) patterns of nanometer-size W metal clusters prepared at different average cluster sizes. Nanometer-size W metal clusters were produced through a collision induced clustering mechanism of W metal atoms generated by decomposing W(CO)6 vapors. The XRD patterns clearly showed that structure changed from amorphous→face- centered-cubic (fcc)→body-centered-cubic (bcc) with increasing average cluster size. This implies that W metal clusters do not simply approach the bulk bcc structure but pass through an intermediate fcc structure before they reach the bulk structure, as predicted by Tománek, Mukherjee, and Bennemann [Phys. Rev. B 28, 665 (1983)]. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480063
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  • 7
    Electronic Resource
    Electronic Resource
    Differential expression of phospholipase D1 in the developing retina (2002)
    Oxford, UK : Blackwell Science, Ltd
    European journal of neuroscience 15 (2002), S. 0 
    Details
    ISSN: 1460-9568
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Expression patterns of phospholipase D1 (PLD1) in the developing rat retina were investigated using immunocytochemistry and Western blot analysis and compared with the expression patterns of glutamine synthetase. PLD1 immunoreactivity appeared first in a few neuroblasts in the middle of the mantle zone of the primitive retina by embryonic (E) day 13. PLD1-immunoreactive primitive ganglion cells were characterized in the ganglion cell layer by E17. Faint immunoreactivity at E17 profiled radially orientated cells and this pattern appeared up to postnatal (P) day 7. In the ganglion cell layer at P3, displaced amacrine cells and ganglion cells were classified. At P5, presumptive horizontal cells and amacrine cells were identified. By P7, a thin outermost layer of newly formed segments of the photoreceptor cells was also PLD1 immunoreactive. PLD1 immunoreactivity at P8 was limited to radial Müller cells and the outer segment layer of the photoreceptor cells, and the expression pattern was conserved to adulthood. Western blot analysis showed relatively high amounts of PLD1 protein at E17 and P3, a decrease at P7, and moderate amounts from P8 onward. Co-expression of PLD1 with glutamine synthetase in the retina appeared first after birth in differentiating neurons and in Müller cells by P8; thereafter the pattern was maintained. The expression pattern of the PLD1 during development of the retina suggests that PLD1 plays important roles in glutamate-associated differentiation of both specific neurons and radial glial cells, and in glutamate-mediated cellular signalling in Müller cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9568.2002.01939.x
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  • 8
    Electronic Resource
    Electronic Resource
    Electron spectroscopy and the Kondo Volume Collapse in Ce"0"."7Th"0"."3
    Amsterdam : Elsevier
    Journal of Magnetism and Magnetic Materials 63-64 (1987), S. 515-517 
    Details
    ISSN: 0304-8853
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-8853(87)90652-4
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  • 9
    Electronic Resource
    Electronic Resource
    A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures
    Amsterdam : Elsevier
    Solid State Electronics 31 (1988), S. 1113-1118 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(88)90414-5
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  • 10
    Electronic Resource
    Electronic Resource
    Photoemission and BIS study of Ce"4Bi"3 and CeBi"0"."7Te"0"."3
    Amsterdam : Elsevier
    Solid State Communications 82 (1992), S. 581-586 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(92)90237-4
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