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  • 1
    Electronic Resource
    Electronic Resource
    Localized density of states in hydrogenated amorphous silicon/silicon nitride interfaces studied by transient voltage spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5786-5790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localized electronic density of states gL(E) at the hydrogenated amorphous silicon/silicon nitride (a-Si:H/Si3N4) interfaces is evaluated by transient voltage spectroscopy (TVS). The gL(E) at the a-Si:H/Si3N4 interface is found to have a broad peak and a deep minimum, respectively, around 0.9 and 0.47 eV below the conduction-band edge. The positive fixed charge at the interface makes the flatband voltage of the a-Si:H/Si3N4 system negative and, hence, there is a finite band bending at the interface even at the gate bias of 0 V. The gL(E) of different samples fabricated under various preparation conditions varies from sample to sample, whereas threshold voltages of a-Si:H thin-film transistors are almost independent of their preparation, suggesting the presence of an equilibrium mechanism between the positive fixed charge and the defect density. A modification of gL(E) at a-Si:H/Si3N4 interfaces by bias annealing is definitely observed using TVS. The overall results obtained by TVS seem to support the defect pool model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363634
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 874-877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface-emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular-beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105 W/cm2, a 34-nm longitudinal mode spacing, and a 2.3-nm peak width of the laser emission were observed for the 6-μm-thick multilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337328
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  • 3
    Electronic Resource
    Electronic Resource
    Ionized Mg doping in molecular-beam epitaxy of GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1092-1095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg-ion bombardment is negligible when the ion accelerating voltage (Va) (approximately-less-than)130 V. For higher Va , the damage can be removed by postgrowth annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336545
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of thermal annealing on Si-doped GaAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4826-4827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (∼4 K) photoluminescence has been studied on as-grown and thermally annealed Si-doped GaAs grown by molecular beam epitaxy. The peak intensities of the defect-related emissions, due to the defect-induced bound exciton (d, X) and the defect complex (d) are decreased by thermal annealing. On the other hand, Hall measurements show that free carrier concentrations are decreased only slightly by thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335302
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  • 5
    Electronic Resource
    Electronic Resource
    Electron traps in AlGaAs grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5062-5069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient capacitance spectroscopy we have investigated deep electron traps in n-AlGaAs grown by molecular-beam epitaxy (MBE). The thermal activation energies of seven traps, labeled ME1–ME7, observed in this study increase with increasing Al content(x) up to the direct-indirect crossover point (x∼0.42), but show only a small change with further increases in Al content. Traps ME4–ME7 are dominant in samples with x≤0.2. Traps ME4–ME6 strongly depend on the growth ambient. The concentration of ME7 is almost independent of the ambient in the growth chamber but decreases rapidly with increasing growth temperature. ME7 is a native defect and can almost certainly be identified with the trap EL2 observed in bulk and vapor-phase epitaxially grown GaAs. Traps ME4–ME6 are probably formed by impurities involving oxygen such as CO, H2O, and AsO in the growth ambient. All of the traps, ME5–ME7 are clearly responsible for a decrease in the photoluminescence intensity of MBE grown AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338330
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  • 6
    Electronic Resource
    Electronic Resource
    Properties of silicon surface cleaned by hydrogen plasma (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1378-1380 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of the silicon surface cleaned by the irradiation of the hydrogen electron cyclotron resonance plasma has been studied by x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and Fourier transform infrared spectroscopy. It was confirmed that the irradiation of the hydrogen plasma eliminated both a native oxide layer and a contaminated carbon layer from the silicon surface. In addition, it was found that the surface has the retardation effect on the air oxidation at room temperature. However, the plasma irradiation caused the minute roughness on the surface and hydrogen penetration into the bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105211
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  • 7
    Electronic Resource
    Electronic Resource
    Electron degradation and yields of initial products. IV. Subexcitation electrons in molecular oxygen (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3081-3086 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron slowing-down processes in molecular oxygen gas in the subexcitation domain (below the ionization threshold) are studied by using the Spencer–Fano (SF) equation and its simplification, the continuous-slowing-down approximation (CSDA), both in time-dependent and time-independent representations. Compared to the previously studied cases of N2 and CO2, O2 has the special features in its inelastic cross sections of (i) strong delta-function-like peaks in the vibrational excitation cross section below 1.3 eV and (ii) very low energy thresholds of electronic excitation channels. These features provide a stringent test for the CSDA. Indeed, our results clearly show for the first time that the CSDA fails even qualitatively to reproduce the electron degradation spectrum given by the exact SF method over the whole energy regime studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456652
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  • 8
    Electronic Resource
    Electronic Resource
    Self-matched high-voltage rectangular wave pulse generator (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 2116-2118 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the self-matched pulse generator, an efficient high-voltage generator which produces a rectangular wave pulse. It generates rectangular wave pulses with a duration from a few nanoseconds to a few microseconds. The waveform of the generated pulses is maintained regardless of the resistivity of the load. The principles of its operation and applications are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138430
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  • 9
    Electronic Resource
    Electronic Resource
    Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1864-1866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/Al0.22Ga0.78As single quantum wells with localized Si doping were grown by molecular beam epitaxy. Low-temperature (1.8, 4.2 K) photoluminescence due to excitons bound to Si donors, which were located at the center of wells, was observed. The binding energies of the exciton are 1.8–1.3 meV for well widths ranging from 7.4–15.4 nm, and substantially agree with the theoretical results obtained by Kleinman [Phys. Rev. B 28, 871 (1983)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336015
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  • 10
    Electronic Resource
    Electronic Resource
    Digital etching of GaAs: New approach of dry etching to atomic ordered processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to dry etching of GaAs, digital etching, has been demonstrated. In digital etching, the etchant and an energetic beam, which induces chemical sputtering at the surface, alternately impinge onto the surface. Electrons and Cl2 gas were used as the energetic beam and the etchant, respectively, in the present experiment. Etching rates of 1/3 monolayer/cycle, independent of Cl2 flux and electron current density, were obtained. The present results show that an inherent self-limiting mechanism is involved and that the etching process is limited by the adsorption of etchant. This digital etching technique is expected to be applied to the fabrication of well-defined quantum wire and quantum box structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103171
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