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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 44 (1988), S. 992-993 
    ISSN: 1420-9071
    Keywords: Endogenous digitalis-like factor ; digoxin-like immunoreactivity ; Na+,K+-ATPase inhibitor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary We measured endogenous digitalis-like factor (EDF) in rat plasma during acute saline infusion by two different procedures. Na+,K+-ATPase inhibitory activity in the rat plasma significantly increased during saline loading (7.8±2.2 vs 2.5±0.9%, with and without acute saline loading, respectively, p〈0.05). On the other hand, the plasma digoxin-like immunoreactivity significantly decreased during acute saline loading (16.9±1.6 vs 32.0±2.8 pg digoxin equivalents/ml. with and without acute saline loading, respectively, p〈0.01). These results indicate that the major substances detected by digoxin-like immunoreactivity and direct Na+,K+-ATPase inhibitory activity are completely different, at least in rat plasma.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Archives of dermatological research 280 (1988), S. 145-151 
    ISSN: 1432-069X
    Keywords: Immunohistochemical localization ; Type V collagen ; Normal human skin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Tissue distribution of type V collagen in normal human skin was studied using an indirect immunofluorescent technique to determine whether type V collagen is present in the interstitium or in the basement membrane. Type V collagen was isolated from the human placenta by pepsin digestion and was purified with fractioning salt precipitations. Sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE) demonstrated that type V collagen contained α1(V) and α2(V) chains, but not the α3(V) chain. Specificity of the rabbit antibodies to type V collagen was assessed using enzyme-linked immunosorbent assay (ELISA) and an immunoblotting method. Antibodies showed no cross-reactivity to other collagens, laminin, and fibronectin. With an indirect immunofluorescent technique, type V collagen was found to be widely distributed throughout the dermis. Intense fluorescent staining was noted in the papillary dermis and adnexal dermis surrounding hair follicles and eccrine glands. The basement membrane of the dermoepidermal junction, skin appendages, and capillaries was not stained. By indirect immunoperoxidase double staining, type V collagen was not found to be deposited on type IV collagen present in the basement membrane. Immunoelectron microscopic studies showed that type V collagen was not located in the basal lamina. These results suggest that type V collagen is distributed in the interstitium, but not in the basement membrane of normal human skin.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 36 (1989), S. 575-578 
    ISSN: 1432-1041
    Keywords: bunazosin ; hypertension ; alpha1-adrenoceptor blocker ; blood pressure ; renal blood flow ; renal function ; renin ; aldosterone ; atrial natriuretic peptide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The renal and hormonal effects of the α1-adrenoceptor blocker bunazosin were examined in 6 patients with essential hypertension. Oral bunazosin for 4 to 12 weeks significantly decreased mean blood pressure by 10%, increased effective renal blood flow and creatinine clearance by 34% and 37%, respectively, the plasma norepinephrine concentration was elevated by 60%, and the plasma atrial natriuretic peptide level was lowered by 22%. The plasma renin activity and aldosterone concentration were unchanged. Thus, a moderate reduction in blood pressure was produced by bunazosin treatment while maintaining renal perfusion.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3081-3086 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron slowing-down processes in molecular oxygen gas in the subexcitation domain (below the ionization threshold) are studied by using the Spencer–Fano (SF) equation and its simplification, the continuous-slowing-down approximation (CSDA), both in time-dependent and time-independent representations. Compared to the previously studied cases of N2 and CO2, O2 has the special features in its inelastic cross sections of (i) strong delta-function-like peaks in the vibrational excitation cross section below 1.3 eV and (ii) very low energy thresholds of electronic excitation channels. These features provide a stringent test for the CSDA. Indeed, our results clearly show for the first time that the CSDA fails even qualitatively to reproduce the electron degradation spectrum given by the exact SF method over the whole energy regime studied.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 16 (1986), S. 0 
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In order to investigate the effects of airway cooling on bronchial responsiveness in normal subjects, we measured bronchial responsiveness to inhaled methacholine with and without the inhalation of cold air. Two out of seven subjects showed an increase in baseline respiratory resistance (Rrs) during cooling of the airway but the other five subjects showed little change in their baseline Rrs. All subjects increased bronchial responsiveness to methacholine. Additionally, the threshold dose of methacholine decreased to one-third of the control dose with cooling of the airway. We speculate that airway cooling increased bronchial responsiveness to methacholine in normal subjects presumably due to increased vagal tone, increased alpha-adrenergic activity and/or a release of chemical mediators.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 2116-2118 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the self-matched pulse generator, an efficient high-voltage generator which produces a rectangular wave pulse. It generates rectangular wave pulses with a duration from a few nanoseconds to a few microseconds. The waveform of the generated pulses is maintained regardless of the resistivity of the load. The principles of its operation and applications are described.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 874-877 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface-emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular-beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105 W/cm2, a 34-nm longitudinal mode spacing, and a 2.3-nm peak width of the laser emission were observed for the 6-μm-thick multilayer.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1092-1095 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg-ion bombardment is negligible when the ion accelerating voltage (Va) (approximately-less-than)130 V. For higher Va , the damage can be removed by postgrowth annealing.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1864-1866 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/Al0.22Ga0.78As single quantum wells with localized Si doping were grown by molecular beam epitaxy. Low-temperature (1.8, 4.2 K) photoluminescence due to excitons bound to Si donors, which were located at the center of wells, was observed. The binding energies of the exciton are 1.8–1.3 meV for well widths ranging from 7.4–15.4 nm, and substantially agree with the theoretical results obtained by Kleinman [Phys. Rev. B 28, 871 (1983)].
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5062-5069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient capacitance spectroscopy we have investigated deep electron traps in n-AlGaAs grown by molecular-beam epitaxy (MBE). The thermal activation energies of seven traps, labeled ME1–ME7, observed in this study increase with increasing Al content(x) up to the direct-indirect crossover point (x∼0.42), but show only a small change with further increases in Al content. Traps ME4–ME7 are dominant in samples with x≤0.2. Traps ME4–ME6 strongly depend on the growth ambient. The concentration of ME7 is almost independent of the ambient in the growth chamber but decreases rapidly with increasing growth temperature. ME7 is a native defect and can almost certainly be identified with the trap EL2 observed in bulk and vapor-phase epitaxially grown GaAs. Traps ME4–ME6 are probably formed by impurities involving oxygen such as CO, H2O, and AsO in the growth ambient. All of the traps, ME5–ME7 are clearly responsible for a decrease in the photoluminescence intensity of MBE grown AlGaAs.
    Type of Medium: Electronic Resource
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