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  • 1
    Electronic Resource
    Electronic Resource
    Measurement of dynamic polarization modulation depth utilizing the J1–J4 method of spectrum analysis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2337-2343 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spectrum analysis method for the linear, direct, and self-consistent measurement of dynamic modulation depth of polarization modulators is presented. This method utilizes the Bessel recurrence relation to determine the modulation depth from the photodetector voltage amplitudes at the fundamental frequency and its next three harmonics. Based on the existing J1–J4 method of dynamic phase-shift measurement in homodyne interferometry, this method is useful for calibration of polarization modulated ellipsometers. The method is demonstrated through the use of a highly birefringent transparent thin film of piezoelectric polyvinylidene fluoride with indium tin oxide electrodes. The theoretical analysis of the measured noise factor for the particular system configuration predicted a minimum detectable polarization modulation depth of 0.2 rad, and was experimentally verified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144685
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  • 2
    Electronic Resource
    Electronic Resource
    Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2349-2357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Bi4Ti3O12 thin films having layered perovskite structure were fabricated by metalorganic solution deposition technique on both Pt-coated Si and bare Si substrates at a temperature as low as 500 °C. The effects of post-deposition rapid thermal annealing on the structural and electrical properties were analyzed. The electrical measurements were conducted on metal–ferroelectric–metal capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 184 and 0.018 and the remanent polarization and the coercive field were 4.4 μC/cm2 and 84 kV/cm, respectively. The films exhibited high resistivity in the range 108–1012 Ω cm for films annealed at temperatures of 500–700 °C for 10 s. The I–V characteristics were found to be Ohmic at low fields and space-charge-limited at high fields. A V3/2 dependence of the current was observed in the space-charge region. This could be explained by assuming the mobility to be field dependent since in thin films the electric fields are invariably high even at low applied voltages. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363069
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1521-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO2/SiO2/Si and PZT/Pt/Ti/SiO2/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO2 electrodes. The RuO2/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO2 and PZT, as evidenced by the atomic resolution images as well as energy dispersive x-ray analysis. A nanocrystalline pyrochlore phase Pb2ZrTiO7−x, x≠1, was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO2/Si thin film was well crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO2/SiO2/Si thin films are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356388
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  • 4
    Electronic Resource
    Electronic Resource
    Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5073-5078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1−x)O3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low-field dielectric permittivity (εr) measurements. It was observed that a low εr layer existed at the Pt/PZT interface but not at the RuO2/PZT and Pt/SrBi2Ta2O9 interfaces. In the case of Pt/PZT, the capacitance of this interfacial layer decreases with increasing fatigue while the εr of the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness and/or decreases interfacial layer permittivity, but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 and Pt/SrBi2Ta2O9/Pt structures, however, the εr does not change with ferroelectric film thickness or fatigue cycling. This implies no interfacial layer exists at the interfaces and which can be correlated to the observed nonfatigue effect. Additionally, the equivalent energy-band diagrams of these different capacitor structures were proposed to complement the proposed fatigue mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359737
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  • 5
    Electronic Resource
    Electronic Resource
    Size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1610-1612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films, prepared by metalorganic deposition technique, were studied by determining how the ferroelectric properties vary with film thickness and grain size. It was found that the ferroelectric properties were determined by the grain size, and not by the thickness of the film in our studied thickness range of 80–500 nm. A 80 nm thick film showed good ferroelectric properties similar to the 500 nm thick film. The possible mechanisms for the size effects in SBT–BTN films are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366872
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  • 6
    Electronic Resource
    Electronic Resource
    Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1484-1486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 °C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at PO2=1 mTorr was 20 μC/cm2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 1011 switching repetitions. The leakage current density at a field of 80 kV was 5×10−8 A/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123588
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of Ba(Mg1/3Ta2/3)O3 thin films prepared by metalorganic solution deposition technique for microwave applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1080-1082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the properties of Ba(Mg1/3Ta2/3)O3 thin films prepared by the metalorganic solution deposition technique. Bulk Ba(Mg1/3Ta2/3)O3 ceramics have shown excellent dielectric properties at microwave frequencies; however, the high sintering temperature of bulk material is the major obstacle in their use as dielectric resonators to miniaturize microwave circuits. It was possible to obtain an ordered-perovskite phase of 0.3-μm-thick Ba(Mg1/3Ta2/3)O3 films with trigonal symmetry at an annealing temperature of 700 °C, which is much lower than the bulk sintering temperatures. The electrical measurements were conducted on Pt/Ba(Mg1/3Ta2/3)O3/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 22.2 and 0.009, respectively. The dielectric constant of thin films was comparable to the typical values (εr∼23.5–25) reported for bulk ceramics. The temperature coefficient of capacitance was −145 ppm/°C in the measured temperature range of 25–125 °C. The leakage current density was lower than 10−7 A/cm2 at an applied electric field of 0.5 MV/cm. The high dielectric constant, which is comparable to bulk, low dielectric loss, and good temperature and bias stability suggest the suitability of Ba(Mg1/3Ta2/3)O3 thin films for microwave communications and integrated capacitor applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122090
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  • 8
    Electronic Resource
    Electronic Resource
    Laser-assisted low temperature processing of Pb(Zr, Ti)O3 thin film (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1958-1960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470–550 °C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122334
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  • 9
    Electronic Resource
    Electronic Resource
    Novel high temperature multilayer electrode-barrier structure for high-density ferroelectric memories (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 719-721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This has been accomplished in the past using four/five separate electrode- and diffusion-barrier layers. In this letter, we report a novel Pt–Rh–Ox/Pt–Rh/Pt–Rh–Ox electrode-barrier structure which acts as an electrode as well as a diffusion barrier for integration of the ferroelectric capacitors directly onto silicon deposited using an in situ reactive rf sputtering process. The electrodes have a smooth and fine grained microstructure and are excellent diffusion barriers between the PbZr0.53Ti0.47O3 (PZT) and Si substrate and exhibit good thermal stability up to very high processing temperatures of 700 °C. The ferroelectric (PZT) test capacitors using these electrode barriers grown directly on Si, show well saturated hysteresis loops with Pr and Ec of 16 μC/cm2 and 30–40 kV/cm, respectively. The capacitors exhibit no significant fatigue loss (〈5%) up to 1011 cycles and have low leakage currents (2×10−8 A/cm2 at 100 kV/cm). These electrode barriers can be used to directly integrate the thin film capacitors on the source/drain of the transistors of the memory cell structure for accomplishing large scale integration.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119840
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  • 10
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of crystalline (1−x)Ta2O5–xAl2O3 thin films fabricated by metalorganic solution deposition technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1341-1343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline (1−x)Ta2O5–xAl2O3 thin films were fabricated by metalorganic solution deposition technique on Pt-coated Si substrate at a temperature of 750 °C. Thin films with 0.9Ta2O5–0.1Al2O3 composition exhibited improved dielectric and insulating properties compared to Ta2O5 thin films. The measured small signal dielectric constant and dissipation factor at 100 kHz were 42.8 and 0.005, respectively. The temperature coefficient of capacitance was 20 ppm/°C in the measured temperature range of 25–125 °C. The leakage current density was lower than 6×10−8 A/cm2 up to an applied electric field of 1 MV/cm. A charge storage density of 18.9 fC/μm2 was obtained at an applied electric field of 0.5 MV/cm. The high dielectric constant, low dielectric loss, low leakage current density, and good temperature and bias stability suggest (1−x)Ta2O5–xAl2O3 thin films to be a suitable dielectric layer in integrated electronic devices in place of conventional dielectrics such as SiO2 or Si3N4. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119888
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