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  • 1
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3886-3889 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetization measurements were performed on epitaxial and textured Bi2Sr2CaCu2Ox thin films deposited on (100) LaAlO3 and MgO substrates. An anomalous dependence of the critical current density derived from magnetization hysteresis measurement on magnetic field is observed. The measured critical current density shows a minimum at a magnetic field (Hm) far below the upper critical field Hc2. The measured Hm in epitaxial films has an exponential dependence on temperature, e−T/T0 (T0∼12.5 K). The anomalous field dependence of critical current density is attributed to the presence of weak links in the films.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4080-4082 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial superconducting Bi2Sr2CaCu2Ox (BSCCO) thin films have been formed by solid phase epitaxy from amorphous films deposited by metallorganic chemical vapor deposition. (100) MgO and LaAlO3 single crystals were used as the substrates. After high-temperature annealing in flowing oxygen, the films consist predominantly of the BSCCO (2212) phase and are epitaxial to the LaAlO3 with the c axis perpendicular to the substrate surface. The epitaxial structure of the films is confirmed by x-ray diffraction measurements including θ/2θ and in-plane Φ scans as well as by cross-sectional high-resolution transmission electron microscopy. Four-probe resistivity measurements show that the critical temperature of the film on LaAlO3 is 78 K. The critical current density of the epitaxial layer was one order of magnitude greater than that of textured films on MgO.
    Materialart: Digitale Medien
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  • 5
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-Tc superconducting Bi-Sr-Ca-Cu-O thin films with good electrical properties and smooth surface morphologies have been prepared by low-pressure organometallic chemical vapor deposition using the new fluorocarbon-based precursors Sr(hexafluoroacetylacetonate)2⋅tetraglyme and Ca(hexafluoroacetylacetonate)2⋅triglyme together with Cu(acetylacetonate)2 and triphenylbismuth [Bi(C6H5)3]. The fluorinated precursors are air-stable and exhibit high, stable volatility even after prolonged heating. X-ray diffraction measurements reveal that the films deposited at 650 °C contain some fluoride phases but no high-Tc phases. However, post-annealing in oxygen produces films composed predominantly of the Bi2Sr2CaCu2Ox phase with high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼100 K and zero resistivity achieved at 73 K.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Inorganic chemistry 26 (1987), S. 783-784 
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3858-3861 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600–850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
    Materialart: Digitale Medien
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  • 8
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High Tc superconducting Tl-Ba-Ca-Cu-O thin films have been prepared by a novel hybrid technique that combines electron beam evaporation with organometallic chemical vapor deposition (OMCVD). Multilayer thin films of Ba-Ca-Cu-O are prepared by sequential evaporation of BaF2, CaF2, and Cu sources onto single-crystal MgO (100) or yttria-stabilized zirconia substrates followed by annealing in a water vapor-saturated oxygen atmosphere. Thallium is then incorporated in these films in either of two ways: (1) OMCVD using thallium(cyclopentadienide) as the source or (2) vapor diffusion using bulk Tl-Ba-Ca-Cu-O superconductor as the source. The resultant films are single phase, consisting predominantly of Tl1Ba2Ca2Cu3Ox with crystallite Cu-O planes preferentially oriented parallel to the substrate surface. Resistivity measurements indicate superconducting onset temperatures above 120 K with zero resistance by 104 K. By eliminating the water vapor in the initial anneal, fluoride (originating from the Ba and Ca sources) may be retained in the film. Upon T1 incorporation, this promotes formation of the Tl1Ba2Ca1Cu2Ox phase with preferential crystallite c-axis orientation perpendicular to the substrate surface.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 976-978 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Highly oriented thin films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been deposited on silver substrates by low-pressure organometallic chemical vapor deposition. The volatile metalorganic complexes Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth are used as precursors with N2O as a reactant gas. X-ray diffraction measurements reveal that the films deposited at 625 °C contain a mixture of the Bi2(Sr,Ca)2CuOx and Bi2(Sr,Ca)3Cu2Ox phases. The post-annealed films are predominantly composed of the Bi2(Sr,Ca)3Cu2Ox phase with preferential orientation of the crystallite c axes perpendicular to the substrate surface. Magnetic susceptibility measurements indicate the superconducting onset temperature of the annealed films to be at 80 K. The zero-field critical current density, estimated from magnetization measurements, is ∼3.9×105 A/cm2 at 5.5 K.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1906-1908 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Highly oriented films of the high Tc Bi-Pb-Sr-Ca-Cu-O (BPSCCO)superconductor have been prepared by two organometallic chemical vapor deposition (OMCVD) approaches. In the first approach, Pb is introduced by alternate deposition of BSCCO and PbOx films using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, triphenyl bismuth, and tetraphenyl lead. In the second approach, Pb is incorporated into an OMCVD-derived BSCCO film by vapor diffusion using PbO as the source. X-ray diffractometry and scanning electron microscopy reveal that Pb doping significantly improves the crystalline orientation and the film morphology. Films deposited by both methods on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox phase and have a high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistance by 80 K.
    Materialart: Digitale Medien
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