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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3276-3283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of substrate preparation on the structure and orientation of MgO films grown on (001) GaAs using pulsed laser deposition has been investigated. Textured MgO films displaying a (111)MgO(parallel)(001)GaAs orientation relation with x-ray rocking curve full width at half maximum (FWHM) values as low as 1.8° were obtained in cases where the native GaAs surface oxide was only partially desorbed prior to growth. Reflection high-energy electron diffraction, transmission electron microscopy (TEM), and x-ray pole figure analysis of these films reveals a preferential orientation within the plane of the substrate: [11¯0]MgO(parallel)[11¯0]GaAs and [112¯]MgO(parallel)[110]GaAs. An interfacial layer (∼5 nm thick) was observed in high resolution TEM analysis, and was attributed to a remnant native GaAs oxide layer. Complete desorption of the native GaAs oxide at ∼600 °C in vacuum prior to MgO growth led to significant surface roughening due to Langmuir evaporation, and resulted in randomly oriented polycrystalline MgO films. Growth of MgO on Sb-passivated GaAs substrates, which provided smooth, reconstructed surfaces when heated to 350 °C in vacuum, resulted in cube-on-cube oriented films [i.e., (001)MgO(parallel)(001)GaAs,[100]MgO(parallel)[100]GaAs] with x-ray rocking curve FWHM values as low as 0.47°. TEM analysis of the cube-on-cube oriented films revealed evidence of localized strain fields at the MgO/GaAs interface, indicating the presence of misfit dislocations in the MgO layer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7261-7267 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallography and microstructure of an antiferroelectric ceramic of approximate composition Pb0.97La0.02(Zr0.65Sn0.25Ti0.10)O3 have been examined. Transmission electron microscopy (TEM), x-ray, and neutron powder studies were carried out. The cell is metrically tetragonal with a c/a ratio of 0.993 when indexed to the parent cubic perovskite cell. The structure exhibits both a commensurate supercell, believed to be associated with oxygen octahedra distortions, and an incommensurate modulation. The different crystallographic variants of the tetragonal antiferroelectric phase gave rise to a hierarchy of domain structures. Charging of TEM specimens having an incomplete conductive coating caused domain migration.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6520-6522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold evaporated on air-cleaved (00.1) graphite was observed by scanning tunneling microscopy. Most individual gold islands were not stable during scanning; some islands even appeared to translate. These observations suggest that the interaction between the gold islands and the scanning tunneling microscope tip is stronger than that between the gold and the air-cleaved graphite substrate. Some gold islands were observed to be stable. It was deduced that stable islands at steps were located on the upper layer rather than on the lower layer. It is also deduced that the alignment of the elongated gold grains in the continuous film may be related to cleavage steps.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1527-1536 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of GaN and ZnO can be separated from the substrates on which they are grown by the use of a laser-assisted debonding process in which a pulsed laser is shone through the substrate and absorbed in the film. Experience shows that the success in separating the films intact and damage free depends sensitively on the laser parameters used and the physical and geometric properties of the films. In this contribution, the mechanics of the laser-assisted debonding of GaN films are presented and used to construct process maps that delineate the conditions for damage-free film separation. The key variable is the nondimensional group ΩEp/(dp2τ), where Ω is a lumped material constant, Ep is the laser pulse energy, dp is the diameter of the illuminated area and τ is the laser pulse length. Experimental observations of UV/excimer laser assisted debonding of GaN films from sapphire substrates are used to illustrate the types of deformations and cracking modes on which the process maps are based. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1025-1034 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cracking of thick GaN films grown on sapphire is reexamined on the basis of a combination of microstructural observations of cracking and established mechanics of fracture of films. It is argued that cracking is motivated by tensile growth stresses once a critical thickness is reached. Subsequent growth on the cracked films occurs, perpetuating the cracked structure until the crack surfaces approach one another and touch. Continued film growth buries the crack. Once the crack faces touch, there are conditions under which it is energetically favorable for the cracks to close and heal. Crack healing can be kinetically limited. Whether the crack healing is complete within the growth time depends on several factors including, it is suggested, whether impurities have adsorbed to the surface during growth. Conditions under which cracks that have extended into the sapphire substrate during film growth can act as critical flaws for fracture of the substrate on cooling are also presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3695-3698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusivity of moisture along the TiN/SiO2 interface has been determined by imaging the inward diffusion of 18O and 2D from isotopically labeled water using a secondary ion mass spectroscopy (SIMS) technique. The diffusivity, at room temperature, of the 18O and 2D labeled species along the interface are indistinguishable and have a value of 6.0±2.0×10−13 cm2/s, four orders of magnitude faster than bulk diffusivity of the same species in the plasma-enhanced chemical vapor deposition silica, also determined by SIMS. From 8 to 90 °C, the activation energies for interface and bulk diffusivities of the 2D labeled species are found to be 0.21 and 0.74 eV, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6302-6312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of stress during electromigration along Al lines, constrained within a dielectric in a coplanar test configuration, is measured. It is shown that, above a certain threshold current density, cracking of the dielectric is induced in the vicinity of the anode. Cracking of the dielectric leads to loss of mechanical constraint on the aluminum conductor which, in turn, leads to increases in electrical resistance with continued current flow. The electromigration-induced stresses are determined from the measured frequency shifts induced in a novel ruby strain sensor embedded immediately beneath the interconnect line on a sapphire substrate. The transparency of the sapphire substrate also facilitated the observation of a hitherto unreported form of dielectric cracking, namely cracking from the interconnect along internal interfaces. The observations of dielectric cracking are in agreement with a recent fracture mechanics model. Analysis of the stress data, together with the results of finite element calculations of the strain energy release rate for crack extension, gives a quantitative estimate of the effective valence Z*(=1.3±0.2) for aluminum. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4430-4438 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal stresses exist in ZnO varistors as a result of both crystallographic anisotropy in thermal expansion of the constituents and thermal expansion mismatch between phases. Due to the piezoelectric nature of ZnO, these stresses induce a net electric dipole moment that modifies the grain boundary Schottky barriers and causes an alteration of the varistor current–voltage response in the nonlinear regime. We report Raman piezospectroscopic measurements of residual strains in polycrystalline ZnO and develop a stochastic model for the distribution of potential barrier heights based on the distribution of internal stresses. The model provides a physical basis for barrier height distributions used in electrical network simulations of varistor transport behavior. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 540-543 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an instrument designed to monitor molecular motions in multiphasic, weakly fluorescent microscopic systems. It combines synchrotron radiation, a low irradiance polarized microfluorimeter, and an automated, multiframing, single-photon-counting data acquisition system, and is capable of continually accumulating subnanosecond resolved anisotropy decays with a real-time resolution of about 60 s. The instrument has initially been built to monitor ligand–receptor interactions in living cells, but can equally be applied to the continual measurement of any dynamic process involving fluorescent molecules, that occurs over a time scale from a few minutes to several hours. As a particularly demanding demonstration of its capabilities, we have used it to monitor the environmental constraints imposed on the peptide hormone epidermal growth factor during its endocytosis and recycling to the cell surface in live cells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3716-3721 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an instrument based on the novel combination of synchrotron radiation, a high sensitivity time-resolved microfluorimeter, and a multiframe single photon counting data acquisition system. This instrument has been designed specifically to measure kinetic events in live cells using fluorescence resonance energy transfer, and is capable of rapidly collecting multiple consecutive decay profiles from a small number of fluorophores. The low irradiance on the samples (〈10 mW/cm2) greatly reduces probe photobleaching and specimen photodamage during prolonged exposures. The Daresbury Synchrotron Radiation Source provides fully wavelength tunable light pulses that have a full width half-maximum of 160 ps at a repetition rate of 3.125 MHz, with the high temporal stability required for continuous measurements over periods of hours. A very low limit of detection (〈104 molecules/mW/cm2) is accomplished by combining a high-gain single photon counting detection system with a low fluorescence background optical layout. The latter is achieved by the inclusion of collimating optics, a reflecting objective, and a specially designed beam stop situated in the epi-fluorescence light-path. A typical irradiance of 8 mW/cm2 on a sample of ∼105 fluorescein molecules gives, in under 20 s, a fluorescence decay profile with a peak height of 104 counts, over 400 channels, and a signal to background ratio better than 40. The data acquisition system has been developed to have a real-time time-resolved fluorescence collection capability (denoted as TR2) so that fluorescence lifetime data can be continually collected throughout a changing process. To illustrate the potential of this instrument, we present the results of a TR2 experiment in which lifetime measurements of fluorescence resonance energy transfer are used to monitor the degree of clustering of epidermal growth factor receptors during endocytosis, over a period of about 1 h, with a 5 s resolution. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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