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  • 1
    Electronic Resource
    Electronic Resource
    Phase and amplitude characteristics of nearly degenerate four-wave mixing in Fabry–Perot semiconductor lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2587-2589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase and amplitude characteristics of nearly degenerate four-wave mixing in a semiconductor laser are studied. The experimental data can be quantitatively understood with a theoretical analysis in terms of the phase and amplitude modulations caused by mixing between the optical fields in the injected laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353073
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  • 2
    Electronic Resource
    Electronic Resource
    Polarization-dependent gain, gain nonlinearities, and emission characteristics of internally strained InGaAsP/InP semiconductor lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7444-7459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A polarization-dependent rate-equation model on polarization-dependent emission characteristics of internally strained 1.3-μm InGaAsP/InP semiconductor lasers is presented. Among the rate-equation parameters, the polarization-dependent gain and gain-saturation coefficients are calculated using the density-matrix approach and the confinement factors and loss coefficients are related to the waveguide structure. Numerical simulations show that anomalous polarization-dependent emission characteristics can occur when the internal stress is in the 108-dyn/cm2 order of magnitude. Various types of emission characteristics from measurements and simulations are shown and the conditions for these emission characteristics are discussed. Single-polarization emission and two-polarization switching, including polarization bistability, are found in the low-stress regime and two-polarization coexisting characteristics are found in the high-stress regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347560
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  • 3
    Electronic Resource
    Electronic Resource
    Electron heat transport with non-Maxwellian distributions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 3570-3576 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements are presented of electron heat transport with non-Maxwellian (flattopped) distributions due to inverse bremsstrahlung absorption of intense microwaves in the University of California at Davis Aurora II device [Rogers et al., Phys. Fluids B 1, 741 (1989)]. The plasma is created by pulsed discharge in a cylindrical vacuum chamber with surface magnets arranged to create a density gradient. The ionization fraction (∼1%) is high enough that charged particle collisions are strongly dominant in the afterglow plasma. A short microwave pulse (∼2 μs) heats a region of the afterglow plasma (ne/ncr≤0.5) creating a steep axial (LT∼1–10λei) temperature gradient. Langmuir probes are used to measure the relaxation of the heat front after the microwave pulse. Time and space resolved measurements show that the isotropic component of the electron velocity distribution is flat topped (∼exp[−(v/vm)m], m(approximately-greater-than)2) in agreement with Fokker–Planck calculations using the measured density profile. Classical heat transport theory is not valid both because the isotropic component of the electron velocity distribution is flattopped and the temperature gradients are very steep.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870892
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: "Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique'' [J. Appl. Phys. 76, 8215 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5487-5487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359608
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8215-8217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent single-phase rubidium titanyl phosphate (RTP) films having excellent crystalline properties have been deposited by excimer laser ablation method on (001)- and (010)-oriented potassium titanyl phosphate (KTP) substrates, respectively. X-ray θ-2θ scans and pole figures showed that the laser-ablated RTP films grew epitaxially on, and had exactly the same orientations of, the underlying KTP substrates. X-ray photoelectron spectroscopy analysis revealed that the RTP films prepared with this method are nearly stoichiometric. It appears to be possible to use these films as waveguides having sharp waveguide/substrate interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357884
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  • 6
    Electronic Resource
    Electronic Resource
    Physical characteristics of band-gap engineered, photovoltaic detectors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4637-4646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive understanding of the physics of a graded band-gap, photovoltaic detector has been achieved through a full scale finite difference simulation of the semiconductor equations and the Poisson equation in time and space. The results show that three characteristic times, Maxwell's dielectric relaxation time, the electron transit time across a graded device period, and the minority electron lifetime, govern the transient response of the device completely. Varying device parameters to control these characteristic times will enable tailoring of device structures to optimize responsivities for applications requiring picosecond to nanosecond response speeds. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366202
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  • 7
    Electronic Resource
    Electronic Resource
    A Monte–Carlo approach to domain boundary precipitation in binary alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6582-6587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte–Carlo approach on the second phase precipitation in polycrystalline binary alloys is developed. The approach starts from the kinetic spin-exchange Ising model and the Q-state Potts model, and a coupling algorithm for simulation of both phase precipitation and domain growth is developed. The simulation on a simplified system with slow domain boundary migration reveals precipitation phenomena on the domain boundaries. The effect of domain boundaries on the morphology and kinetics of the second phase precipitates is investigated. It is shown that the scaling concept and the Lifshitz–Slyozov–Wagner law are broken in the present system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368976
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of oxygen stoichiometry on the electrical property of thin film La0.5Sr0.5CoO3 prepared by pulsed laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5560-5565 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement of electrical conductivity and Hall effect has been made for thin film La0.5Sr0.5CoO3−δ (LSCO) prepared on (001) SrTiO3 substrates by pulsed laser deposition under reduced oxygen pressures. A considerable effect of oxygen stoichiometry on electrical resistivity of LSCO thin films has been observed. The semiconducting behavior was observed as long as the sample was slightly oxygen deficient. The Hall effect measurements revealed a change ranging from four to six orders of magnitude in the carrier density, from 1019 to 1015 cm−3 at room temperature, and 1020–1012 cm−3 at ∼80 K for the films prepared inbetween 1 bar and 1 μbar O2. A chemical equilibrium approach of the interaction between oxygen vacancies and hole carriers was used to explain the measured data. The results were compared with the microstructural measurements, yielding an empirical relation between the lattice expansion along c-axis and oxygen vacancies for LSCO films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368600
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  • 9
    Electronic Resource
    Electronic Resource
    Low-field magnetoresistive property of partially crystallized La0.5Sr0.5MnO3 thin films by pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2791-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La0.5Sr0.5MnO3 thin films deposited on (001) SrTiO3 substrates at different temperatures are prepared using pulsed laser deposition, and their electro- and magnetotransport properties are experimentally evaluated. The structure analysis reveals that the thin films show amorphous, mixed amorphous/nanocrystalline as well as epitaxial microstructures, respectively, depending on the deposition temperature. While the amorphous thin film exhibits variable range hopping conduction, the epitaxial sample is metal like and ferromagnetic. Enhanced low-field magnetoresistance at low temperature for the microstructure in which the nanocrystalline phase and amorphous phase coexist is demonstrated. It is argued that the amorphous layer separating the neighboring nanocrystals behaves as barrier for the spin-dependent tunneling, resulting in enhanced magnetoresistance at low magnetic field. The modified two-channel model where the insulating conduction channel and the spin-ordered and metallic conduction channel coexist in parallel is employed to explain the magnetotransport phenomena. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288693
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  • 10
    Electronic Resource
    Electronic Resource
    Frequency response and scaling of hysteresis for ferroelectric Pr(Zr0.52Ti0.48)O3 thin films deposited by laser ablation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5198-5202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferroelectric hysteresis response against periodically varying electric field over frequency range of 10−2–105 Hz and amplitude range of 2–45 kV/cm for YBa2Cu3O7 (YBCO)/ Pb(Ti0.48Zr0.52)O3 (PZT)/YBCO thin film capacitors prepared by laser ablation is measured by utilizing the Sawyer–Tower circuit. Given amplitude Δ of the field, the hysteresis area 〈A〉 first grows and then decays as a function of frequency cursive-phi. At low and high ranges of frequency, 〈A〉 can be scaled as 〈A〉∝cursive-phi1/3Δ2/3 and 〈A〉∝cursive-phi−1/3Δ, respectively. It is established that the dynamic hysteresis at the high frequency range for a PZT thin film capacitor does not follow the theoretically predicted scaling law. An empirical scaling law 〈A〉∝cursive-phi1/3(Δ−Δ0)2/3/(1+bcursive-phi2/3Δ−1/3) with Δ0 the critical field and b a constant, is proposed to characterize the frequency and amplitude dependence of the hysteresis area over all the frequency range. In addition, the remnant polarization Pr and coercive field Ec as functions of cursive-phi are investigated, respectively, revealing a single-peaked pattern of both Pr and Ec. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371500
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