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  • 1
    Electronic Resource
    Electronic Resource
    Second-harmonic generation and sum-frequency mixing of double-wavelength Nd:YALO3 laser to 413.7-nm violet coherent radiation in LiIO3 crystal (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4472-4473 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to get 413.7-nm violet coherent radiation by using second-harmonic generation and sum-frequency mixing of radiation from a 1341.4- and 1079.5-nm dual-wavelength Nd:YALO3 laser in a LiIO3 crystal is reported in this communication. First, the 670.7-nm red coherent radiation is obtained by second-harmonic generation of 1341.4-nm radiations in a LiIO3 crystal, and then the 670.7- and 1079.5-nm radiations are mixed again in a second LiIO3 crystal to get 413.7-nm radiation. The phase-matching angles are obtained for both nonlinear optical processes. The experimental results agree well with calculated results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352179
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  • 2
    Electronic Resource
    Electronic Resource
    Variation of the mobility and the two-dimensional electron gas concentration with indium composition in δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4332-4335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1〈x〈0.6) δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm2/V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349113
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  • 3
    Electronic Resource
    Electronic Resource
    Laser action of Nd:YAlO3 at 1300 nm (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3373-3375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From our measured value of the stimulated emission cross section for 4F3/2–4I13/2 transition of Nd3+ ion in YAlO3 crystal as well as the results of continuous wave (cw) and pulsed 1341.4 nm Nd:YAP lasers, it can be seen that Nd:YAP is an excellent 1300 nm laser crystal. In our laboratory cw output power of 195.8 W at 1341.4 nm with an overall efficiency of 1.43% and pulsed output energy of 5.1 J at 1341.4 nm with an overall efficiency of 2.02% have been achieved by using this kind of crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349277
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  • 4
    Electronic Resource
    Electronic Resource
    Twice sum-frequency mixing of a dual-wavelength Nd:YALO3 laser to get 413.7-nm violet coherent radiation in LiIO3 crystal (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1880-1881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to obtain 413.7-nm violet coherent radiation by second-order sum-frequency mixing of the outputs (1341.4 and 1079.5 nm) of a double-wavelength Nd:YALO3 (Nd:YAP) laser in two LiIO3 crystals is reported. First, a 598.1-nm orange coherent radiation is obtained by sum-frequency mixing (SFM) of 1341.4- and 1079.5-nm radiations in a LiIO3 crystal, and then the 598.1- and 1341.4-nm radiations are mixed again in a second LiIO3 crystal to get 413.7-nm radiation. The phase-matching angles are obtained for both SFM processes. The experimental results agree well with calculated results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349489
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Sm2(Fe1−xAlx)17Ny compounds : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5890-5892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By means of x-ray phase analysis, it is shown that all the interstitial Sm2(Fe1−xAlx)17Ny nitrides and the parent compounds crystallize in Th2Zn17-type structure for x≤0.4. The lattice constants of the parent compounds increase linearly with Al concentration. The introduction of nitrogen leads to a further increase in lattice constants, but the amplitude of the increase decreases with increasing Al concentration. The introduction of nitrogen leads to an increase of Curie temperature Tc . The composition dependence of Tc of the parent compounds exhibits a maximum, whereas Tc of the nitride decreases monotonously with increasing Al concentration from 750 K for x=0 to 313 K for x=0.4. The mean magnetic moments of iron ions in both nitrides and parents decrease monotonously with increasing Al concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353512
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  • 6
    Electronic Resource
    Electronic Resource
    Crystal growth and characterization of heavily MgO-doped LiNbO3 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7635-7639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of LiNbO3 doped with up to 25 mol % of MgO were successfully grown. No precipitates were discovered. In studies of the change of the Curie temperatures and Raman spectra with composition, an abrupt change was observed near the composition of 10 mol % of MgO. From the model of Gallagher relating Tc and cation vacancies and the cation occupation calculated by x-ray data, it is proposed that the Mg atoms replace the Nb atoms at Li sites. When the Nb atoms are exhausted, the Mg atoms replace the Li sites and Li vacancies are created. The amount of Mg in the LiNbO3 structure could be predicted better from the 151 cm−1 peak shift in Raman spectra than from Tc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347533
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  • 7
    Electronic Resource
    Electronic Resource
    Order and chaos in semiconductor microstructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 655-664 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The semiclassical theory of ballistic electron transport in semiconductor microstructures provides a description of the quantum conductance fluctuations in terms of the classical distributions for the lengths and directed areas of the scattering trajectories. Because the classical dynamics differs for integrable (circular) and chaotic (stadium) scattering domains, experimental measurements of the conductance of these microstructures provide a unique probe of the quantum properties of classically regular and chaotic systems. To advance these theoretical and experimental studies we compare geometrical formulas for the classical distributions of lengths and areas with numerical simulations for microstructures examined in recent experiments, we assess the effects of lead size and placement, and we provide a critical analysis of the role of scattering "noise'' on the classical and semiclassical predictions. Finally, we present a detailed comparison of the semiclassical theory with recent experimental measurements of the conductance fluctuations in circular- and stadium-shaped microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165994
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  • 8
    Electronic Resource
    Electronic Resource
    Spin-reorientation transition in magnetic alloy films CoxNi1−x/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With better than 1% control of alloy composition, binary alloy films CoxNi1−x/Cu(100) with x≤10% were prepared for the study of the spin-reorientation transition at variations of composition, thickness, and temperature. Only the films with a Co concentration less than 10% reveal the spin-reorientation with the film thickness. The critical thickness for the spin-reorientation transition was shifted drastically from 7.5 to 17.5 monolayers for a Co concentration variation from 0% to 8%. These findings indicate a strong influence of the composition on the magnetoelastic anisotropy. A kind of temperature-driven spin-reorientation from in-plane to perpendicular with increasing temperature was also found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354586
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on Curie temperature of magnetic ultrathin films Co/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7153-7155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties were investigated for the 2 ML Co/Cu(100) films grown at various temperatures from 125 to 350 K. By precisely controlling the film thickness, the influence of thickness on Curie temperature (TC) due to the finite size effect can be excluded. The Curie temperature of the 2 ML Co keeps almost invariant for the growth temperature (Tg) below 250 K, and drops drastically at Tg higher than 275 K. For Tg=340 K, TC dropped to 170 K which is only about half of 325 K for Tg=125 K. Accompanied with the increase of TC for the films grown at lower temperatures, the remanent Kerr signal as well as coercivity were enhanced. According to a simple theoretical estimation, the change of TC due to the variation of the magnetization and anisotropy was found to be consistent with the experimental results. The enhancement in TC or magnetization and anisotropy with various Tg should be traced back to the presence of island growth in the films grown at lower temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358827
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  • 10
    Electronic Resource
    Electronic Resource
    Mevva ion source for the application of material surface modification : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1295-1297 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Several versions of Mevva ion sources have been developed in our institute since 1988. It operates in a pulsed mode with a pulse length of 1.2 ms and a repetition rate of up to 50 pps. A time-averaged beam current of 10 or 50 mA has been extracted at 30–80 kV from Mevva IIA-H and Mevva IIB, respectively. In order to develop surface modification of materials by ion implantation we have constructed three kinds of Mevva ion source implantation systems. High dose (3–5×1017 cm−2) implantation with Ti, Ce, Y, and Ti+C, etc. has been carried out for improving the lifetime of metal cutting tools, relay contacts, dies, and some sophisticated components.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144985
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