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  • 1
    Electronic Resource
    Electronic Resource
    Laser beam interference effects on the photovoltage of a p-n junction diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5459-5463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photovoltage developed by a p-n junction diode illuminated by an interference pattern through a slit depends both on the distance between fringes and the phase of the interference pattern relative to the position of the slit. For a slit width which accommodates an integer number N of fringes, the voltage is independent of the phase of the pattern but this is no longer the case for a noninteger number of fringes. The maximum dependence is observed for N+1/2 fringes within the slit but the effect decreases as N increases. When the fringe distance is no longer negligible compared to the minority carrier diffusion length the dependence of the photovoltage on the number of fringes becomes more pronounced. A theory is presented which shows how the diffusion length can be obtained from the experimental data. Experiments on GaAs and Si diodes are reported. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362735
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
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  • 3
    Electronic Resource
    Electronic Resource
    Optical and structural properties of ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5951-5954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363590
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  • 4
    Electronic Resource
    Electronic Resource
    The hydridation and nitridation of GeSi oxide annealed in ammonia (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360123
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  • 5
    Electronic Resource
    Electronic Resource
    Zeff profiles measured by visible and soft x-ray bremsstrahlung arrays in TFTR (abstract)a) : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 635-635 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Zeff profiles from the tangential array of visible bremsstrahlung (VB) emission (5235 A(ring)) have shown several interesting features in TFTR. The observed Zeff profile was flat during the ohmic phase and hollow during the neutral-beam heating phase. In order to crosscheck the measured Zeff profiles from the VB array, a poloidal array which measures bremsstrahlung emission in the soft x-ray region has been analyzed. The analysis of array measurements in the two different spectral regions was performed on the same geometry determined from the Abel inversion of the electron density (interferometry). The two independent measurements of Zeff profiles have been consistent with each other for most of the discharges in TFTR. However, in a discharge where the two measurements are inconsistent, the Zeff profile deduced from the VB array indicates some degree of problems. In this paper, the detailed analysis of the bremsstrahlung array (both poloidal and tangential) measurements is presented. Particularly, the effects of geometry in the inversion process, such as a poloidal elongation of flux surfaces, are investigated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146310
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  • 6
    Electronic Resource
    Electronic Resource
    Identification of Alfvén mode location via multichannel interferometer measurements (abstract) : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 698-698 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Quasicoherent magnetohydrodynamics modes with an Alfvén frequency scaling are seen routinely in TFTR neutral beam heated plasmas as well as some Ohmic plasmas. So far, they are only observed in external magnetic fluctuation measurement (Mirnov coils). A close correlation is observed between the changes in the mode frequency and electron density measured by the multichannel infrared interferometer. This correlation allows us to determine the location of the Alfvén modes. The result shows that they are near the plasma edge, r/a〉0.85. This method is also used to identify the location of the toroidicity-induced Alfvén eigenmode driven by fast ions in a radiowave heating experiment. The result is consistent with the location determined by the reflectometer measurement.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147925
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  • 7
    Electronic Resource
    Electronic Resource
    Thermally stable, low-resistance PdGe-based ohmic contacts to high–low doped n-GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2465-2467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stable, low-resistance PdGe-based ohmic contacts to high–low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400 °C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114609
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  • 8
    Electronic Resource
    Electronic Resource
    Interband transitions in Cd0.07Zn0.93Te/ZnTe strained single quantum wells grown by double-well temperature-gradient vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2344-2346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic states in a Cd0.07Zn0.93Te/ZnTe strained single quantum well grown by the simple method of double-well temperature-gradient vapor deposition have been investigated both experimentally and theoretically. X-ray diffractometry measurements were performed to characterize the structural properties of the Cd0.07Zn0.93Te/ZnTe quantum well. Reflectivity and photoreflectance measurements showed several resonant excitations in the Cd0.07Zn0.93Te quantum well, and photoluminescence measurements on the strained quantum well structures showed that the sharp excitonic transition from the first electron subband to the first heavy-hole band. Interband transition energies in the Cd0.07Zn0.93Te were calculated by taking into account the strain effects, and these theoretical values are in reasonable agreement with the results from the experimental measurement. These results indicate that these Cd0.07Zn0.93Te/ZnTe strained quantum wells hold promise for the potential applications such as in optoelectronic devices in the blue-green region of the spectrum. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114339
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  • 9
    Electronic Resource
    Electronic Resource
    The effect of a ZnTe buffer layer on the structural and optical properties of the CdTe/ZnTe/GaAs strained heterostructures grown by temperature-gradient vapor-transport deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2388-2390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-mismatched CdTe epilayers on GaAs (100) substrates with and without ZnTe buffer layers were grown by the simple method of double-well temperature gradient vapor-transport deposition. X-ray diffraction measurements were performed to investigate the structural properties of the epitaxial layers. Photoluminescence and transmission electron microscopy measurements showed that the crystallinity of the CdTe epilayers grown on the GaAs substrates was remarkably improved using the ZnTe buffer. The strain of the CdTe layer was determined from photoreflectance measurements. These results indicated that the CdTe epitaxial films grown on GaAs substrates with the ZnTe buffer can be used for applications as buffer layers for the growth of HgxCd1−xTe and CdxZn1−xTe. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114556
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3125-3128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Raman scattering measurements have been carried out to investigate the hydrogenation and annealing effects in p-type ZnSe epilayers grown on n-type GaAs (100) substrates by molecular beam epitaxy. After hydrogenation, the PL spectra showed that the deep acceptor-bound exciton peak disappeared and that the peak position of the donor–acceptor pair peak shifted to a higher energy. When the hydrogenated ZnSe/GaAs heterostructure was annealed at 300 °, a bound exciton due to neutral acceptors appeared. The Raman intensity of the plasma longitudinal optical-phonon-coupling mode increased after hydrogenation. These results indicate that the crystallinity of the p-type ZnSe epilayers grown on n-type GaAs substrates is improved by hydrogenation and that hydrogenated and annealed ZnSe films grown on GaAs substrates hold promise for potential application as buffer layers for the growth of Zn1−xMgxSySe1−y active layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368510
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