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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
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  • 2
    Electronic Resource
    Electronic Resource
    Buckwheat flour hypersensitivity: an occupational asthma in a noodle maker (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 26 (1996), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background There have been very few reports of occupationai allergies caused by inhalation of buckwheat flour. In this paper, we present a case of occupational asthma and rhinitis caused by buckwheat flour inhalation.Methods and results The patient had strong positive responses to grass and ragweed poiiens as well. The bronchoprovocation test showed early asthmatic response to buckwheat flour extracts. Serum specific IgE antibody to buckwheat flour was detected by enzyme-linked immunosorbent assay (ELISA). In order to further identify the allergenic component of the extracts, sodium dodecyl sulphate-polyacrylamide gel electrophoresis (SDS-PAGE) and electroblotting studies were performed. Eight IgE binding components (9–55 kDa) were detected within the buckwheat flour extracts.Conclusion These results suggest that inhalation of buckwheat flour can caused IgE mediated bronchoconstriction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2222.1996.tb00558.x
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  • 3
    Electronic Resource
    Electronic Resource
    Confinement and the safety factor profile (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1348-1355 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conjecture that the safety factor profile, q(r), controls the improvement in tokamak plasmas from poor confinement in the Low- (L-) mode regime to improved confinement in the supershot regime has been tested in two experiments on the Tokamak Fusion Test Reactor (TFTR) [Plasma Phys. Controlled Nucl. Fusion Res. 1, 51 (1987)]. First, helium was puffed into the beam-heated phase of a supershot discharge, which induced a degradation from supershot to L-mode confinement in about 100 ms, far less than the current relaxation time. The q and shear profiles measured by a motional Stark effect polarimeter showed little change during the confinement degradation. Second, rapid current ramps in supershot plasmas altered the q profile, but were observed not to change significantly the energy confinement. Thus, enhanced confinement in supershot plasmas is not due to a particular q profile, which has enhanced stability or transport properties. The discharges making a continuous transition between supershot and L-mode confinement were also used to test the critical-electron-temperature-gradient transport model. It was found that this model could not reproduce the large changes in electron and ion temperature caused by the change in confinement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871788
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  • 4
    Electronic Resource
    Electronic Resource
    High-frequency core localized modes in neutral beam heated plasmas on TFTR (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 593-605 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A band of high-frequency modes in the range 50–150 kHz with intermediate toroidal mode numbers 4〈n〈10 are commonly observed in the core of supershot plasmas on TFTR [R. Hawryluk, Plasma Phys. Controlled Fusion 33, 1509 (1991)]. Two distinct varieties of magnetohydrodynamic (MHD) modes are identified, corresponding to a flute-like mode predominantly appearing around the q=1 surface and an outward ballooning mode for q(approximately-greater-than)1. The flute-like modes have nearly equal amplitude on the high-field and low-field side of the magnetic axis, and are mostly observed in moderate performance supershot plasmas with τE〈2τL, while the ballooning-like modes have enhanced amplitude on the low-field side of the magnetic axis and tend to appear in higher performance supershot plasmas with τE(approximately-greater-than)2τL, where τL is the equivalent L-mode confinement time. Both modes appear to propagate in the ion diamagnetic drift direction and are highly localized with radial widths Δr∼5–10 cm, fluctuation levels ñ/n, T˜e/Te〈0.01, and radial displacements ξr∼0.1 cm. Unlike the toroidally localized high-n activity observed just prior to major and minor disruptions on TFTR [E. D. Fredrickson et al., Proceedings of the 15th International Conference on Plasma Physics and Controlled Nuclear Fusion Research, Seville, Spain (International Atomic Energy Agency, Vienna, 1995), No. IAEA-CN-60/A-2-II-5], these modes are typically more benign and may be indicative of MHD activity excited by resonant circulating beam ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871887
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  • 5
    Electronic Resource
    Electronic Resource
    Confinement analysis in low-confinement mode of hydrogen isotope experiments on the Tokamak Fusion Test Reactor (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 4521-4535 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of isotope on confinement in high-recycling, L-mode plasmas is studied on the Tokamak Fusion Test Reactor (TFTR) [see D. M. Meade, J. Fusion Energy 7, 107 (1988)] by comparing hydrogen and deuterium plasmas with the same magnetic field and similar electron densities and heating power, with both Ohmic and deuterium-neutral-beam heating. Following a long operational period in deuterium, nominally hydrogen plasmas were created through hydrogen glow discharge and hydrogen gas puffing in Ohmic plasmas, which saturated the exposed limiter surface with hydrogen and raised the H/(H+D) ratio from 10±3% to 65±5%. Ohmic deuterium discharges obtained higher stored energy and lower loop voltage than hydrogen discharges with similar limiter conditions. Neutral-beam power scans were conducted in L-mode plasmas at minor radii of 50 and 80 cm, with plasma currents of 0.7 and 1.4 MA. To minimize transport differences from the beam deposition profile and beam heating, deuterium neutral beams were used to heat the plasmas of both isotopes. Total stored energy increased approximately 20% from nominally hydrogen plasmas to deuterium plasmas during auxiliary heating. Of this increase about half can be attributed to purely classical differences in the energy content of unthermalized beam ions. Kinetic measurements indicate a consistent but small increase in central electron temperature and total stored electron energy in deuterium relative to hydrogen plasmas, but no change in total ion stored energy. No significant differences in particle transport, momentum transport, and sawtooth behavior are observed. Overall, only a small improvement (∼10%) in global energy confinement time of the thermal plasma is seen between operation in hydrogen and deuterium. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872069
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116384
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  • 7
    Electronic Resource
    Electronic Resource
    Laser beam interference effects on the photovoltage of a p-n junction diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5459-5463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photovoltage developed by a p-n junction diode illuminated by an interference pattern through a slit depends both on the distance between fringes and the phase of the interference pattern relative to the position of the slit. For a slit width which accommodates an integer number N of fringes, the voltage is independent of the phase of the pattern but this is no longer the case for a noninteger number of fringes. The maximum dependence is observed for N+1/2 fringes within the slit but the effect decreases as N increases. When the fringe distance is no longer negligible compared to the minority carrier diffusion length the dependence of the photovoltage on the number of fringes becomes more pronounced. A theory is presented which shows how the diffusion length can be obtained from the experimental data. Experiments on GaAs and Si diodes are reported. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362735
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  • 8
    Electronic Resource
    Electronic Resource
    Optical and structural properties of ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5951-5954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363590
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  • 9
    Electronic Resource
    Electronic Resource
    High transconductance heterostructure field-effect transistors based on AlGaN/GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 794-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117894
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  • 10
    Electronic Resource
    Electronic Resource
    Low frequency noise in two-dimensional metal-semiconductor field effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3138-3140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10−5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz–20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100–180 K and 200–300 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115803
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