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  • 1
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] The entire DNA sequence of chromosome III of the yeast Saccharomyces cerevisiae has been determined. This is the first complete sequence analysis of an entire chromosome from any organism. The 315-kilobase sequence reveals 182 open reading frames for proteins ...
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2501-2508 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pentacene films deposited with molecular beam deposition have been fabricated and characterized with respect to structure and morphology using x-ray diffraction and scanning electron microscopy. Metal-insulator semiconductor field-effect transistor devices based on such films were used to study their transport properties. A maximum field-effect mobility of 0.038 cm−2 V−1 s−1 is reported for devices incorporating pentacene films deposited at room temperature. The structural characterization revealed the coexistence of two phases: the thermodynamically stable single-crystal phase and the kinetically favored, metastable thin-film phase. Such mixed phase films were produced when low deposition rates were used in combination with a substrate temperature of 55 °C. Mixed phase films had transport properties inferior to films consisting solely of one phase, while amorphous films deposited at low surface mobility conditions had extremely low conductivity. Use of prepurified pentacene as source material resulted in an order of magnitude lower free-carrier concentration in the pentacene film as compared to films made with as-received pentacene. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1427-1442 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: As-grown Czochralski silicon samples with different oxygen concentrations have been heated at temperatures in the range 350–500 °C. Oxygen loss during anneals at low temperatures (T≤400 °C) is shown to follow second-order kinetics and measurements led to values of oxygen diffusivity that were larger than normal by a factor of ∼3, assuming the capture radius for dimer formation was 5 A(ring). Variations in the rate of [Oi] loss during more extended anneals could be explained if oxygen diffusion was initially enhanced but tended to its normal value as the anneals progressed. Much greater initial enhancements were derived from similar measurements for samples which had been hydrogenated by a heat treatment in H2 gas at 1300 °C for 30 min followed by a rapid quench to room temperature, and the enhancements were consistent with values derived from measurements of the relaxation of stress-induced dichroism. At higher temperatures (T≥450 °C) the measured rates of [Oi] loss were less than the expected rate of Oi-Oi interaction and tended to vary with increasingly high powers of [Oi]. Modeling of the clustering process demonstrated that the reductions could be explained if the oxygen dimers were present in a quasiequilibrium concentration throughout the anneals. The establishment of this equilibrium appears to require that oxygen dimers diffuse much more rapidly than isolated Oi atoms. The kinetics of oxygen loss over the whole range of temperatures can then be explained if dimer clustering leads mainly to increases in concentrations of agglomorates containing large numbers (≥8) of oxygen atoms. It is therefore possible to account for thermal donor (TD) formation based on the formation of different sizes of oxygen clusters, although the possibility that self-interstitials are involved in TD formation is not excluded. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7954-7957 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The morphology of conjugated polymer thin films has been controlled by exploiting the processes giving rise to solvatochromism in the initial polymer solutions from which the polymer films were deposited by spin coating. The material used was the substituted polythiophene, 3[2(S2-methylbutoxy)ethyl]-polythiophene. Starting with polymer dissolved in "good'' solvent, various quantities of "bad'' solvent when added lead to the reorganization of the solubilizing side chains attached to the conjugated polymer backbone. Ordering of these side chains increases with addition of bad solvent decreasing the flexibility of the backbone, yielding more rigid rodlike polymer chains. This in turn causes aggregation and finally precipitation. It is found that this molecular order can be transferred from solution to solid film during the spinning process, ascertained from optical spectroscopy. With these films acting as the active layer in a field-effect transistor structure, the mobility of the carriers injected into the films can be measured. It is found that as the molecular order and aggregation increases, carrier mobility decreases from ∼10−5 cm2 V−1 s−1 to ≤10−8 cm2 V−1 s−1 in films displaying the highest degree of molecular order. This is ascribed to the increased interchain separation in the ordered systems along with effects due to macroscopic aggregate grain boundaries.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2136-2138 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Metal-insulator-semiconductor field-effect transistors have been constructed with pentacene as the active semiconductor. The pentacene is processed by spin coating from a soluble precursor. A simple thermal conversion yields transistors with carrier mobilities as high as 9×10−3 cm2 V−1 s−1 and current modulations of the order of 105. Depletion of charge is essential to the device operation. Data for an invertor exhibiting voltage amplification are presented. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6289-6294 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Conductivity and field-effect mobility measurements using metal-insulator-semiconductor field-effect-transistor devices and acceptor density measurements using metal-insulator- semiconductor (MIS) diodes are presented. The measurements were made on thin polymer films of the organic semiconductor, poly(β'-dodecyloxy-α,α',-α',α‘terthienyl), which were doped to different conductivities using 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) as an oxidizing agent. It is found that both the field-effect mobility and the conductivity of these films increases superlinearly upon doping while the transistor amplification, the on/off ratio, decreases. Acceptor densities as obtained from MIS diode measurements are in close agreement with the bulk charge density as calculated from the DDQ content. However, the product of this bulk charge density, field-effect mobility, and the elementary charge e is a factor of 100 larger than the polymer conductivity. This indicates that the average mobility for charge carriers in the bulk is considerably lower than the field-effect mobility. It is considered that the bulk charge carriers are trapped by the Coulomb interaction with their parent charge compensating counter-ions, whereas charges in accumulation have no associated counter-ions and, therefore, are more mobile. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 2643-2651 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Density functional theory calculations have been used to explore the mechanism of dissociative adsorption of silane (SiH4) on the Si(100)-(2×1) surface. Two reaction paths are described that produce silyl (SiH3) and hydrogen atom fragments adsorbed on the dimer dangling bonds. The energy barrier on the lowest energy path is 12–14 kcal/mol (depending on the details of the theoretical method used), while the barrier on the other path is about 17 kcal/mol. The initial step in both mechanisms is abstraction of a hydrogen atom from silane by an electron-deficient surface atom. It is also possible for the surface to react by forming a bond between the more electron-rich surface atom and the silane Si atom. This latter reaction path has a prohibitively high barrier (39 kcal/mol), and it leads to different products (adsorbed SiH2 and elimination of H2). These results are discussed in the context of Si film growth kinetics, ultrahigh vacuum studies of silane adsorption and other theoretical studies of silicon surface chemistry. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 2442-2449 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Density functional theory methods are used to calculate the structures and energies of silicon trihydride (SiH3) and dihydride (SiH2) species on the Si(100)-(2×1) surface. These species are intermediates in the growth of silicon films by chemical vapor deposition of silane and disilane. The lowest-energy trihydride species is metastable with respect to the lowest-energy dihydride species, but two surface dangling bonds must be available to affect the transformation to the dihydride. In the lowest-energy configurations, dimers either have both dangling bonds occupied or both unoccupied. While the energy difference between isomers with fully occupied and partially occupied dimers will strongly favor fully occupied dimers at low temperatures, there will be a distribution of dimer occupations at high temperatures. The structures and energies of some other local minima corresponding to tri- and dihydrides are also described. While these species are energetically unfavorable and should only exist transiently, they illustrate the relative energetics of some alternative bonding behavior of the silicon surface. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Bulletin of economic research 3 (1951), S. 0 
    ISSN: 1467-8586
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Bulletin of economic research 22 (1970), S. 0 
    ISSN: 1467-8586
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
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