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  • 1
    Electronic Resource
    Electronic Resource
    Quantitative nondestructive evaluation with ultrasonic method using neural networks and computational mechanics (1995)
    Springer
    Computational mechanics 15 (1995), S. 521-533 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  This paper describes an inverse analysis method using hierarchical neural networks and computational mechanics, and its application to the quantitative nondestructive evaluation with the ultrasonic method. The present method consists of three subprocesses. First, by parametrically changing the location and size of a defect hidden in solid, elastic wave propagation in the solid is calculated with the dynamic finite element method. Second, the back-propagation neural network is trained using the calculated relationships between the defect parameters and the dynamic responses of solid surface. Finally, the trained network is utilized to determine appropriate defect parameters from some measured dynamic responses of solid surface. The accuracy and efficiency of the present method are discussed in detail through the identification of size and location of a defect hidden in solid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00350265
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and antiinflammatory activities of 3-(3,5-di-tert-butyl-4-hydroxybenzylidene)pyrrolidin-2-ones (1987)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 30 (1987), S. 1995-1998 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00394a011
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  • 3
    Electronic Resource
    Electronic Resource
    Photovoltage generation of Si/C60 heterojunction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2798-2800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photovoltage generation was observed for C60/Si heterojunction fabricated by the deposition of C60 thin film on Si substrate. Four types of Si substrates (two for p-type and two for n-type) were used. All junctions showed rectifying behaviors and photovoltage generation under illumination of Ar-ion laser. The highest value of the photovoltage was 0.40 V. From the saturated photovoltage values for four junctions, the Fermi level of C60 thin film was estimated to be located about 4.7 eV below the vacuum level. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361114
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  • 4
    Electronic Resource
    Electronic Resource
    Evaluation of fatigue caused to human body by solar exposure by measuring brain function performance (2004)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Following direct exposure to sunlight while pursuing leisure activities, many have noticed a strong sense of fatigue in the evening. In this regard, our results of a survey of awareness showed that the development of fatigue from solar exposure of the body was generally recognized. On the other hand, a tool for objective and quantitative determination of mental fatigue has recently been reported. Known as the Advanced Trail Making Test (ATMT), it is a method of evaluating brain function. In the present study, we attempted to determine fatigue development caused by exposure of the human body to solar radiation using ATMT results. For 3 days in the summer season, 15 male subjects (26–41 years old) received exposure to the sun equivalent to 100 kJ cm−2 of ultraviolet radiation three to four times each day. During the periods of exposure, the subjects wore short-sleeved shirts and short pants, and covered their heads with a towel. Following the 3-day period, they were divided into two groups based on their subjective evaluation of a sense of tiredness, fatigued (n = 10) and non-fatigued (n = 5). In the fatigued group, a significant increase in the subjective score for fatigue sense was observed in the evening of all 3 days following sun exposure, as well as in the morning of the third day, as compared with those in the non-fatigued group. Further, a significant increase in average ATMT value was also observed in the fatigued group in the evening of the first and second days following sun exposure, as well as in the morning of the third day. These results indicate that ATMT may be a useful evaluation tool for quantitative and objective measurement of mental fatigue caused by exposure to sunlight.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-2494.2004.00231_1.x
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  • 5
    Electronic Resource
    Electronic Resource
    Objective determination of fatigue development following sun exposure using Advanced Trail Making Test (2004)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Sun exposure during leisure activity evokes fatigue. We employed the Advanced Trail Making Test (ATMT), a recently developed objective method of evaluating brain function performance used to measure mental fatigue, for objective determination of fatigue development caused by solar exposure to the human body. First, a survey of consumer awareness was performed, and fatigue development from solar exposure was generally recognized in both summer and spring. In the field test, 15 males (26–41 years old) received sun exposure equivalent to 100 kJ m−2 of ultraviolet radiation three to four times each day for 3 days, during which the subjects wore a short sleeve shirt and a short pant, and covered their head with a towel. A significant increase in scores for subjective sense of fatigue was observed in the evening of all 3 days following sun exposure and on the fourth day, which had no exposure, as well as in the morning of the third and fourth days, as compared with those periods during the control week, which did not have experimental solar exposure. ATMT showed a significant increase in average value in the evening of the first and second days following sun exposure, as well as in the morning of the third and fourth days. In addition, increases in body temperature and heart rate were observed during the exposure periods. The results of multiple regression analysis of subjective feelings showed that fatigue caused by solar exposure was qualitatively different from that in the control week. These results suggest that brain function performance declined following solar exposure as did fatigue development. ATMT results may be useful for quantitative and objective evaluation of mental fatigue caused by sun exposure, along with development of sun care products for the prevention of solar-caused fatigue.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0142-5463.2004.00200.x
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  • 6
    Electronic Resource
    Electronic Resource
    Microdefects in dislocation-free liquid-encapsulated Czochralski GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2609-2614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of different growth conditions on microdefect generation in dislocation-free liquid-encapsulated Czochralski GaAs crystals are investigated using KOH etching technique and infrared light scattering tomography. It is found that microdefects are detected as micropits by KOH etching and as scatterers by infrared light scattering tomography, but are not detected by transmission electron microscopy. It is also found that the formation of these microdefects begins at below 1000 °C during the cooling process of the growth and strongly depends on the cooling rate. Other findings—melt composition and impurities (In,B), and the existence of denuded zones around dislocations—have led the authors to conclude that the microdefects are microprecipitates of excess arsenic atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340998
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  • 7
    Electronic Resource
    Electronic Resource
    Single bunch injection system of the storage ring NIJI-IV for free electron laser use (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2796-2800 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The system of single bunch injection (SBI) for the storage ring NIJI-IV was completed. The system was used for the injection of the short pulse beams from an electron gun into only one of the 16 rf buckets in the ring. On a compact storage ring, the multipulse beams in one pulse train can be stored into only one of many bunches by one injection. The optimum number of the grid pulse in one pulse train was determined to improve the storage efficiency and the storage current by one injection. The keeping time of the bump orbit was calculated by using the transfer matrices. The optimum pulse number obtained by the calculation is 2. In the SBI system, the number of grid pulses in one pulse train can be selected by the gate circuit. A snap off diode and a clip line are used to generate 2 ns grid pulses. The measured grid pulse was shorter than the longitudinal space 5.5 ns of the rf bucket with voltage of −80 V. The EIMAC Y-646B cathode-grid assembly is used as the electron source. It is expected that the injection system provides a higher peak current and easier free electron laser use operation in comparison with the rf-knockout system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145557
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  • 8
    Electronic Resource
    Electronic Resource
    Design and manufacture of a 10-T superconducting wiggler magnet at TERAS : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1960-1963 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 10-T wiggler is an iron-cored superconducting wiggler destined for Electrotechnical Laboratory's 800-MeV electron storage ring to enhance the available radiation. The design and manufacturing contract for this magnet was started in April 1990 and was preceded by a feasibility study. The major features of the magnet are described in the article. Also, the effect of the superconducting wiggler with high magnetic field on the stored electron beam has been simulated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145770
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  • 9
    Electronic Resource
    Electronic Resource
    CoZrMo amorphous films as a soft adjacent layer for biasing magnetoresistive elements with a current shunt layer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4023-4025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Co94−xZr6Mox (4.4≤x≤17 at. %) films have been investigated as a soft-adjacent-layer (SAL) material for trilayered magnetoresistive (MR) sensors with a MR element layer, a current shunt layer, and a SAL for biasing layer. The saturation magnetization 4πMs linearly decreases from 14 to 3 kG with an increase in Mo content. The magnetic anisotropy field Hk decreases to a low value, equivalent to that for NiFe MR films, as the Mo content is increased. The magnetoresistance ratio Δρ/ρ is negative, but sufficiently small, namely one-hundredth of that for NiFe films, while the electrical resistivity ρ, about 140 μΩ cm, is 5.6 times greater than that for NiFe films. The films also have a small magnetostriction coefficient λs on the order of 10−7. A 500-A(ring)-thick CoZrMo film with 12 at. % Mo content is selected as the SAL, because a lesser thickness causes an extreme increase in Hk. Higher Mo content degrades the temperature characteristics of the magnetic properties, due to the lower Curie temperature. Trilayered MR-sensors, 100 μm in length and 10 μm in width, are fabricated with a 400-A(ring)-thick NiFe MR layer, a 400-A(ring)-thick Ti layer, and a SAL using this CoZrMo film. An excellent biasing level is achieved with a 15-mA sense current on the MR sensors. CoZrMo amorphous films have a superior capability as a SAL material, especially for the trilayered MR sensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340537
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of ion-implanted surface and interface structures by computer-simulated backscattering spectra (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3044-3051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer codes for synthesizing random and channeling backscattering spectra have been elaborated to characterize the surface and interface structures formed or modified by ion implantation. Both effects of isotopes and energy fluctuation are taken into account in the spectrum simulation. This backscattering measurement combined with the simulation method is applied to characterization of the N+-implanted Al films and to quantitative analysis of chemical reaction and interdiffusion induced by ion-beam mixing. An ion-beam-induced damage profile and its epitaxial recovery of crystallinity are analyzed by the simulation of channeling spectra from ion-implanted Al2O3 substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335854
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