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  • 1
    Electronic Resource
    Electronic Resource
    Effects of crystallinity and thickness of silicide layer and substrate orientation on the oxidation of NiSi2 on silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 929-936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation kinetics for both dry and wet oxidation of epitaxial NiSi2 (200 nm)/(001)Si samples as well as dry oxidation of polycrystalline NiSi2 (200 nm)/(111)Si and epitaxial NiSi2 (600 nm)/(111)Si samples have been studied by transmission electron microscopy. Comparing oxidation kinetics data of 200-nm-thick epitaxial NiSi2 on (001) and (111)Si, activation energies of the parabolic rate constants are rather close, whereas those for linear rate constants are substantially different. The orientation dependence of the linear activation energies is explained in terms of the total number of available Si atoms for oxidation as a function of the substrate orientation. Oxide growth rate was found to be higher in polycrystalline NiSi2/(111)Si samples than that in epitaxial NiSi2/(111)Si samples. Strong influence of the grain boundaries of NiSi2 on oxidation kinetics was observed with the grain boundaries serving as fast paths for oxidation. For dry oxidation of epitaxial NiSi2 (600 nm)/(111)Si samples, both parabolic and linear activation energies are higher than those of Ni(200 nm)/(111)Si samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360285
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic structure of Si/TbSi2/(111)Si double-heterostructure interfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5744-5747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358411
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  • 3
    Electronic Resource
    Electronic Resource
    Dislocation generation mechanisms of InxGa1−xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1511-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanisms of strain relaxation and dislocation generation for the 2-μm-thick InxGa1−xAs epilayers grown on (100) InP substrates with 0≤x≤1 were investigated. It was found that the growth mode and dislocation density of the InxGa1−xAs epilayers are not only dependent on the lattice mismatch with respect to InP substrates, but the abundance of Ga atoms and the degree of cation disorder in the alloy composition also play important roles. In the negative mismatched range even with a medium lattice mismatch (e.g., ε=−1.1%), InGaAs alloys with a high degree of cation disorder and containing more Ga atoms (x=0.32–0.37) trigger island growth and introduce high-density V-shaped dislocations. In the positive mismatched range, island growth occurs at x≈0.82 (ε=2%) and few V-shaped dislocations are generated. The difference between these two ranges is due to their different Ga concentrations which introduce different island nucleation centers in the initial growth stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356386
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4072-4077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and autocorrelation function analysis. For samples with nominal atomic ratios Mo:Si=1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si=1:2 samples after annealing at 650 °C for 1 h. Multiphases were observed to simultaneously form in samples annealed at 400–500 °C. After 600 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si=1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si-3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period, and annealing conditions. The results are interpreted in terms of the delicate balance among intermixing of constituent atoms, silicide formation, and crystallization of silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361835
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  • 5
    Electronic Resource
    Electronic Resource
    Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh-vacuum-deposited V and Zr thin films on (111)Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9123-9128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh-vacuum (UHV) -deposited V and Zr thin films on (111) Si by high-resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the V/Si system, an amorphous interlayer (a-interlayer), V3Si and V5Si3, were found to form simultaneously in samples annealed at 500 °C for 60 min. For the Zr/Si system, an a-interlayer, Zr5Si3 as well as FeB and CrB types of ZrSi, were observed to form in samples annealed at 440 °C for 40 min. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV-deposited refractory metal and rare-earth–metal thin films on silicon. The observation of the prevalence of the formation of multiphases in the initial stages of thin film reactions called for a reexamination of generally accepted "difference'' in reaction sequence between bulk and thin-film couples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362648
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  • 6
    Electronic Resource
    Electronic Resource
    Morphological evolution of the low-temperature oxidation of silicon with a gold overlayer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 919-925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature oxidation of silicon with a gold overlayer has been studied by in situ reflected high-energy electron diffraction, Auger electron spectroscopy, and transmission electron microscopy. In nonultrahigh vacuum (non-UHV) deposited (001) samples, wet oxidation was found to proceed more rapidly than that of UHV deposited (001) samples. In samples annealed at 220 °C, an oxide layer was found to rapidly develop between a two-layer structure of Au films. Au globules were observed to disperse in the oxide layer after an extended period of oxidation. The difference in the oxidation behavior between UHV and non-UHV samples is attributed to the absence and presence of empty channels between the Au grains. In UHV deposited (111) samples wet oxidized at 220–250 °C for various periods of time, the oxide was found to grow initially on top of the Au layer. Both the thickness of the oxide layer and the unevenness of the Au layer were found to increase with annealing time. The presence of highly textured Au/Si interface in (111) samples led to the retardation of oxidation process. The morphological evolution observed in the present study is used to explain the dependence of maximum oxide thickness on starting Au layer as well as the termination of oxide growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360283
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  • 7
    Electronic Resource
    Electronic Resource
    The dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2730-2732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size has been investigated by transmission electron microscopy and x-ray diffractometry. The thickness of the SiO2 layer was found to decrease with the average grain size of the starting Cu3Si layer. High-resolution transmission electron microscopy revealed that oxidation is initiated at the grain boundaries. Oxide film as thick as 4.5 μm, compared to a previous record of about 2 μm, was grown at room temperature over a period of two weeks in (001) samples. The growth of thick oxide films was achieved by minimizing the grain size of Cu3Si through a reaction between Cu and an intermediate amorphous silicon layer at 200 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356208
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  • 8
    Electronic Resource
    Electronic Resource
    Interfacial reactions in ultrahigh vacuum deposited Y-Si multilayer thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2007-2014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of ultrahigh vacuum deposited Y-Si multilayer thin films have been studied by both conventional and high-resolution transmission electron microscopy, Auger electron spectroscopy, and x-ray diffraction. An amorphous Y-Si intermixing layer with a composition approximately equal to YSi2 was found to form in multilayer films with a composition ratio of 1Y:2Si at room temperature. Homogenization in atomic composition in the amorphous phase proceeded in samples annealed at 250–350 °C. In samples annealed at 400 °C for 30 min, the amorphous layer was completely transformed to crystalline YSi2. The formation of crystalline Y5Si3 and YSi was detected in as-deposited samples with concentration ratios 1Y:1Si and 5Y:3Si as well as in samples prepared with excess Y. Y5Si3 was the only silicide phase present in 5Y:3Si films after 400 °C annealing. The results indicated that the phase formation and stability in Y-Si multilayers depend critically on the composition. Based on the prediction of a growth control model, it was concluded that the formation of amorphous layer at room temperature is controlled by nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356300
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  • 9
    Electronic Resource
    Electronic Resource
    Nanometer thick Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3441-3445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex superlattices having layers as thin as 1.5 nm have been grown by an ultrahigh vacuum/chemical vapor deposition system. High-resolution double-crystal x-ray diffraction, and conventional and high-resolution cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical x-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various periodicity. A cross-sectional transmission electron micrograph of an 80 period Si(4.2 nm)/Si0.878Ge0.122 (1.5 nm) superlattice, in which each individual layers was clearly resolved, demonstrated the capability of this growth technique for nanometer thick layer deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356104
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of amorphous interlayers by solid-state diffusion in Ti thin films on epitaxial Si–Ge layers on silicon and germanium (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6539-6542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of amorphous interlayers (a-interlayers) by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline Ti thin film on germanium and epitaxial Si1−xGex (x=0.3, 0.4, and 0.7) alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy. Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as-deposited samples. The growth of the a-interlayers was found to vary nonmonotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with those of the Ti/Si system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360474
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