ISSN:
1432-0630
Schlagwort(e):
78.20.Dj
;
78.20.Nv
;
71.55.Jv
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Sub-gap absorption measurements are presented as a tool to characterize the amorphization and recrystallization processes in ion-implanted and annealed Si layers. The gap state density associated with the disorder introduced in the target crystalline lattice has been shown to saturate once the amorphization dose is exceeded. The doping effect due to implantation of impurity species is also reported. The absorption spectra have also been shown to be very sensitive to defects associated with precipitation of the implanted atoms.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00324573
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