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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1863-1867 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferromagnetic resonance (FMR) line shapes of Gd-substituted calcium vanadium garnets Y1.6−zCa1.4GdzFe4V0.4Zr0.6O12 (0.8≤z≤1.4) have been studied as the function of the Gd content. The samples had been synthesized by two different routes, with porosities varying from 0.23% to 8.9%. The FMR linewidth, ΔH, in low porosity samples is small (15–20 Oe) and becomes seven to eight times higher in high porosity samples. The linewidth can be explained on the basis of Schloemann's theory of anisotropy and porosity broadening in polycrystalline materials. The line shape is Lorentzian for low porosity and Gaussian for high porosity samples. This variation of the FMR line shape with porosity is explained on the basis of the stochastic theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 22 (1989), S. 1025-1027 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of device quality InAsySb1−y on (100)-oriented GaSb substrates has been achieved by the use of intermediate buffer layers of Ga0.82In0.18As0.17Sb0.83 to minimize the dissolution of the subtrate by the ternary solution. Characterization of these layers by x-ray diffraction, compositional analysis, low-temperature photoluminescence, and electrical measurements indicates their high quality. Spectral response measurements of InAsSb/GaInAsSb/GaSb back-illuminated photodiodes give a 6%–7% quantum efficiency between wavelengths of 2.5 and 4.2 μm at room temperature.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1618-1621 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The "frequency squared scaling'' law, relied upon to enhance the production of high charge state ions from electron cyclotron resonance (ECR) ion sources, indicates that low frequencies of operation may not be viable for production of high ion densities, and hence for the production of high charge state ions. The superconducting electron cyclotron resonance ion source (SCECR) at the National Superconducting Cyclotron Laboratory is a fully superconducting, hexapole stabilized tandem mirror ECR ion source with a multimode microwave cavity. When operated at its optimized high magnetic field (high-B) mode at 6.4 GHz, the high charge state current output of the SCECR approaches all existing ECR ion sources, including higher frequency ECR ion sources (ECRIS). In this study, the SCECR is operated at 2.45 GHz in its high-B mode that is scaled down for that frequency of operation. Initial results with oxygen and argon ion production at 2.45 GHz are presented. It is demonstrated that the SCECR can produce a plasma from which multiply charged ions of up to O7+ and Ar13+ can be extracted with ion current intensities comparable to several higher frequency ECRIS. This study concludes that 2.45 GHz is indeed a viable frequency for production of moderate intensities of multiply charged ions. This may lead to a simpler, and more cost effective microwave apparatus, with a less demanding magnetic field configuration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4109-4113 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A series of systematic tests have been carried out on the superconducting electron cyclotron resonance ion source SCECRIS at the Michigan State University National Superconducting Cyclotron Laboratory in order to better understand the role of different parameters which determine the performance of these sources. A relevant part of these tests has been focused on the role of magnetic field and microwave frequency, with the goal of demonstrating the capability of low frequency electron cyclotron resonance ion sources to produce high ion charge states, in spite of their relative low plasma density. This goal can be achieved using a very high magnetic confining field, according to the concept of a high B mode. A comparison of the source performance at 2.45 and 6.4 GHz for different levels of magnetic field is described in this article. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 2.45 GHz plasma source is a multicusp electron cyclotron resonance source with a tuned single mode microwave cavity. This is a bright plasma source with a well characterized operating mode and plasma parameters [A. K. Srivastava, et al., Rev. Sci. Instrum. 63, 2556 (1992); A. K. Srivastava and J. Asmussen, J. Vac. Sci. Technol. A 11, 1307 (1993)]. The superconducting electron cyclotron resonance (SCECR) is a fully superconducting, hexapole stabilized tandem mirror ion source with a multimode microwave cavity. It is a high charge state ion source with extensive beam diagnostics [T. A. Antaya, Nucl. Instrum. Methods B 40/41, 1024 (1989)]. The coupling of these two sources permits a number of fundamental studies important to both classes of ion sources. The 2.4 GHz plasma source will be used to study the effects of ion or electron (or both) density enhancement on the charge state distribution, total extracted current, and ion energy distributions of the SCECR. The SCECR in turn will be used as a test stand to measure directly the ion distribution and beam characteristics of the 2.45 GHz plasma source. The first results with this hybrid ion source will be presented at this conference.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 927-927 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The "frequency squared scaling'' law, relied upon to enhance the production of high charge state ions from electron cyclotron resonance (ECR) ion sources, indicates that low frequencies of operation may not be viable for production of high ion densities, and hence for the production of high charge state ions. The superconducting electron cyclotron resonance ion source (SCECR) at the National Superconducting Cyclotron Laboratory is a fully superconducting, hexapole stabilized tandem mirror ECR ion source with a multimode microwave cavity. When operated at its optimized high magnetic field (high-B) mode at 6.4 GHz, the high charge state current output of the SCECR approaches all existing ECR ion sources, including higher frequency ECR ion sources (ECRIS). In this study, the SCECR is operated at 2.45 GHz in its high-B mode that is scaled down for that frequency of operation. Initial results with oxygen and argon ion production at 2.45 GHz are presented. It is demonstrated that the SCECR can produce a plasma from which multiply charged ions of up to O7+ and Ar13+ can be extracted with ion current intensities comparable to several higher frequency ECRIS. This study concludes that 2.45 GHz is indeed a viable frequency for production of moderate intensities of multiply charged ions. This may lead to a simpler, and more cost effective microwave apparatus, with a less demanding magnetic field configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1028-1034 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The magnitude and spatial variation of the impressed electric-field patterns inside a compact electron cyclotron resonance ion/plasma source are experimentally measured for argon and nitrogen feed gases. This ECR plasma source consists of several components: a resonant coaxial coupling section, an evanescent circular waveguide section, coupling loop, and the ECR discharge load itself. The electric fields inside the coaxial and circular waveguide sections are measured as the operating pressure and input power and are varied from 0.2 to 2.0 mTorr and 100 to 170 W, respectively. The measured fields verify that a standing wave with a maximum of 20–40 kV/m exists inside the coaxial section of length l. For matched conditions the length of this section varies only slightly between 0.6 and 0.7λ as pressure, power, and gas type vary. However, the evanescent impedance-matching circular waveguide section of length d changes from 2.5 for argon to 3.2 cm for nitrogen, indicating that the gas type influences the plasma impedance. Field pattern measurements in the ECR section of the source demonstrate the presence of nonevanescent fields in the discharge region. Measured plasma loaded and unloaded quality factors varied from 220 to 1800, respectively, indicating that 87% of the net input power is coupled into the discharge load. Additional calculations of conductive wall losses show that about 6% of the input power is lost in the cavity walls, and the remaining 7% is lost in the coupling loop. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7618-7620 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a modified Kroemer's analysis [Appl. Phys. Lett. 36, 295 (1980)] for the determination of the band offset ΔEc of a single quantum well from a carrier profile obtained by capacitance-voltage measurement. The procedure is applied to a pseudomorphic GaAs/InGaAs/GaAs strained layer structure.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2324-2330 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal processing of InP at temperatures above 500 °C is indispensable in the growth and device fabrication of InGaAsP alloy semiconductors for optoelectronic and microwave applications. Incongruous loss of P at these temperatures creates native defects and their complexes. The presence of such defects modifies the electrical and optical properties of the material resulting in poor device performance. In addition, native defects play a significant role in dopant diffusion which is a topic of current interest. We have measured deep-level photoluminescence (PL) on undoped InP after heat treatments at 500 and 550 °C in an open-tube processing system in different protective environments of powder InP, and Sn-InP melt together with an InP cover. In this paper we shall present the PL results which have bearing on the question of defects. We find that (1) the Sn-InP melt provides better protection in preserving the overall luminescence in InP; (2) the deep-level PL related to defects has at least two components in the virgin samples, viz., MnIn, and band C, which is a native defect complex related to VP; (3) a new defect appears in samples heated in a P-deficient environment; and (4) the enhancement in the deep-level luminescence intensity after heat treatment can be attributed to the excess defect concentrations existing under nonequilibrium conditions of an open-tube processing environment.
    Type of Medium: Electronic Resource
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