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  • 1
    Electronic Resource
    Electronic Resource
    Compositional and spectroscopic study of the growth of diamond films from several gaseous mixtures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5702-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A critical experimental test of the empirical unifying scheme recently proposed by Bachmann, Leers, and Lydtyn [Diamond and Related Mater. 1, 1 (1991)] about the gas compositions useful to grow diamond films by plasma-assisted chemical-vapor deposition has been performed. The data confirm the main concept of the Bachmann scheme, namely, the existence of a single compositional "diamond domain'' in a C-O-H triangular diagram, in which the overall gas compositions are plotted; however, quantitatively, the shape and the borders of such a diamond domain are rather different from those assumed in the work of Bachmann and co-workers. For all the gas mixtures investigated, the changes in the plasma optical emission spectra consequent to crossing the border from the "no-growth zone'' into the "diamond domain'' have been studied. These changes show universal features, which point to the presence of the same growth mechanisms over all the diamond domain, independent of the identity of the initial chemical species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357077
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  • 2
    Electronic Resource
    Electronic Resource
    Large range subgap absorption measurements in thin semiconducting films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1942-1946 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A detailed description of an experimental configuration based on photothermal deflection spectroscopy (PDS) and transmittance techniques that enables high sensitivity room temperature absorption measurements over a spectral region extending between 300 nm and 3.4 μm is reported. It is shown that the simultaneously determined PDS and transmittance spectra can be processed to eliminate completely the interference induced oscillations in the spectra which are observed when the film refractive index differs substantially from the one of the substrate. A configuration based on the photopyroelectric and transmittance techniques, though less sensitive than the previous one, is shown to be suitable for the same kind of measurements at cryogenic temperatures. Absorption bands in implanted Si between 2.8 and 3.4 μm have thus been detected and tentatively associated with multiphonon defect assisted absorption bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146947
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of reducing and oxidizing thermal treatments on the transport critical current density in epitaxial Bi2Sr3−xCaxCu2O8+y films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3903-3905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of oxidizing and reducing thermal treatments on the critical current density in epitaxial Bi2Sr3−xCaxCu2O8+y films. Reducing treatments, while increasing the transition temperature up to 94 K, reduces the critical current density relative to the as-grown value in the whole range of reduced temperatures. On the contrary, oxidizing treatments, while decreasing the transition temperature, increases the critical current density. Such effects are shown to be fully reversible under a final air annealing. Such effects are attributed to a decrease of the Bi2Sr3−xCaxCu2O8+y anisotropy which occurs in connection with the increase of the oxygen content in the compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352877
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  • 4
    Electronic Resource
    Electronic Resource
    Ion dose effect in subgap absorption spectra of defects in ion implanted GaAs and Si (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7060-7064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subgap optical absorption investigations have been used to study the influence of increasing ion dose on the properties of ion implanted layers of Si and GaAs. Beside the spectral region corresponding to the band edge region, a second region at lower energy, also exhibiting an exponential behavior but with a substantially larger value of the inverse logarithmic slope, has been observed in all the investigated samples. A common trend has been observed for ion implanted Si and GaAs in the dependence of the values of the lower energy region inverse logarithmic slope as a function of the implantation dose, and it depended on the presence or not of amorphous material in the implanted layer. The results are discussed in terms of a possible evolution of gap states responsible for the observed features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349785
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  • 5
    Electronic Resource
    Electronic Resource
    Compositional dependence of properties of Bi2−yPbySr3−xCaxCu2O8+z films grown by liquid phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6939-6944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Bi2−yPbySr3−xCaxCu2O8+z films by liquid phase epitaxy is illustrated. Films are shown to be good single crystals epitaxial relative to the substrate. Films stoichiometry was varied changing the melt composition. The effects of the Ca and Pb stoichiometry on both the structural and superconducting properties are discussed. The c lattice parameter of the films was found to increase linearly with the Ca content per formula unit with a slope of 0.3 A each 0.5 Ca atoms per formula unit. No sizeable changes in the superconducting properties were found for films with a Ca content between 0.8 and 1.3 atoms per formula unit. Lead doping is shown to decrease the transition temperature without broadening the transition itself. 0.4 lead atoms per formula unit decreased the transition temperature down to 69 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349820
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  • 6
    Electronic Resource
    Electronic Resource
    Surface states and buried interface states studies in semiconductors by photothermal deflection spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3286-3290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is presented which, through the simultaneous analysis of the photothermal deflection spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion-implanted layers on the front surface or buried beneath the front surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348549
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  • 7
    Electronic Resource
    Electronic Resource
    Surface states studies in semiconductors by photothermal deflection spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2577-2580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method based on the analysis of both the amplitude and phase of the photothermal deflection spectroscopy signal which enables one to locate surface states on the front or rear surface of semiconductor wafers and to measure their absorption. The procedure also allows the determination of the sample thermal conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348646
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of reducing and oxidizing thermal treatments on epitaxial Bi2.1−xPbxSr2.9−yCayCu2O8+z films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 191-195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of reducing and oxidizing thermal treatments on truly epitaxial Bi2.1−xPbxSr2.9−yCayCu2O8+z films. Films were grown on NdGaO3 substrates by liquid phase epitaxy with a very narrow mosaic spread (less than 0.1°). Transport and structural properties were investigated for a number of films after various annealing treatments. Tc is shifted to higher values by reducing treatments and to lower values by oxidizing treatments for all lead concentrations. For all films the maximum range of variation Tmaxc − Tminc is about 15 K. However, the Tc for the as-grown lead doped films is lower relative to the undoped ones. Furthermore, in the case of doped films, the optimum hole concentration (corresponding to the highest Tc of 94 K) cannot be reached by reducing treatments. For both doped and undoped films the c-lattice parameter was found to increase slightly after reducing treatments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352156
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  • 9
    Electronic Resource
    Electronic Resource
    High-resolution simultaneous photothermal measurements of thermal parameters at a phase transition with the photopyroelectric technique (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1096-1100 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photothermal techniques allow, under particular experimental conditions, the simultaneous determination of specific heat, thermal conductivity, and thermal diffusivity. A comparison has been made between measurements performed with the gas-microphone (P) configuration and the photopyroelectric (PPE) one at a liquid-crystal second-order phase transition. An increase in the sensitivity with respect to thermal parameter variation has been observed in the case of PPE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351785
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of epitaxial films of Bi2Sr2CaCu2O8+x onto SrTiO3 substrates from liquid KCl solution (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 361-363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Bi2Sr2CaCu2O8+x have been grown from liquid KCl solution, onto (100)-oriented SrTiO3 substrates. The films show a resistance versus temperature behavior of "metallic'' character down to the transition temperature. The residual resistance extrapolated at 0 K is 1/10 of resistance at room temperature. The onset of the superconducting transition is at 81 K, and zero resistance is obtained at 78 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347144
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