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  • Artikel: DFG Deutsche Nationallizenzen  (141)
  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of organic chemistry 45 (1980), S. 2797-2803 
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Materialart: Digitale Medien
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  • 3
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 A(ring) thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (Hc) of the samples increase as the film thickness decreases to 10 ML, and then decrease when the film thickness decreases further to 2 ML.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2812-2817 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A tiny metal probe was used to detect electric signals induced at the early stage of laser ablation in air. It is found that the electric signals result from probe ablation, plasma–probe interaction, and plasma-induced electric field. The recorded signals strongly depend on the probe positions. For a probe placed out of the plasma–probe interaction region, the detected electric signal is a negative peak in the nanosecond range, due to the plasma-induced electric field. The peak arrival time corresponds to the total amount of ion emission from the substrate surface, and therefore, does not vary with the probe position. The signal amplitude is inversely proportional to the square of the probe distance, consistent with the distance dependence of the field intensity from an electric dipole. The signal amplitude increases with the laser fluence while the peak arrival time reduces, reflecting the earlier plasma generation at a higher laser fluence. Both peak width and its arrival time of the electric signals increase with laser fluence and tend to saturate above 6.4 J/cm2. The electric signals were analyzed for laser ablation of different substrate materials. The electric signal detection was also applied to monitor the laser cleaning of organic contamination in real time. The mechanism of the electric signal generation and the process of electron and ion emission are briefly discussed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3268-3274 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates under an atomic force microscope (AFM) tip has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. Boron doped silicon tips were used in contact mode. This technique enables processing of structures with a lateral resolution down to 10 nm on the copper layers. Nanopatterns such as pit array and multilines with lateral dimensions between 10 and 60 nm and depths between 1.5 and 7.0 nm have been created. The experimental results and mechanism of the nanostructure formation are discussed. The created features were characterized by AFM, scanning electron microscope and Auger electron spectroscopy. The apparent depth of the created pit has been studied as a function of laser intensity or laser pulse numbers. Dependence of nanoprocessing on the geometry parameters of the tip and on the optical and thermal properties of the processed sample has also been investigated. Thermal expansion of the tip, the field enhancement factor underneath the tip, and the sample surface heating were estimated. It is proposed that field-enhancement mechanism is the dominant reason for this nanoprocessing. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2400-2403 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Laser ablation of solid substrates in ambient air and under water is investigated. It is found that the laser ablation rate is highly enhanced by the water film. A wide-band microphone is used to detect the audible acoustic wave generated during laser ablation. Peak-to-peak amplitude of the acoustic wave recorded in water confinement regime (WCR) is greater than that recorded in ambient. It is assumed that the plasma generated in WCR induces a much stronger pressure. This high-pressure, high-temperature plasma results in a much higher ablation rate. Theoretical calculation is also carried out to verify this assumption. By proper calibration, acoustic wave detection can be used as a real-time monitoring of the laser ablation. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7647-7661 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article investigates steady-state nonequilibrium conditions in metal–oxide–semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal–insulator–semiconductor) devices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance–voltage and conductance–voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state density Dit and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to study Dit and to monitor the interface quality during device fabrication. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2186-2191 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Audible acoustic wave generation during excimer laser interaction with materials has been investigated. It is found that the amplitudes of acoustic waves depend on laser fluence, pulse number, and substrate material characteristics and can be used to determine the nature of laser–material interactions. When laser fluence is below the ablation threshold of the materials, the amplitudes are reduced to zero at large pulse number due to the cleaning of contaminants on the substrate surface. As laser fluence becomes higher than the ablation threshold, the amplitudes of acoustic waves also reduce with increasing pulse number but to a constant level instead of zero due to laser ablation of substrate materials. Since the surface contamination can be completely removed by a few pulses at high laser fluence, the constant level is attributed to the material ablation. It is also found that the constant level increases with laser fluence. By establishing a relationship between the amplitudes and laser parameters, real-time monitoring of laser–solid interaction can be achieved. Fast Fourier transform analysis of the wave forms shows that there are several frequency components included in the acoustic waves with a peak around 10.9 kHz as the dominant one, which is related to laser material ablation. The monitoring of the acoustic wave emission can, therefore, be used to find the nature of laser–substrate interaction (i.e., surface cleaning or ablation), and to find the ablation threshold. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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