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  • Articles: DFG German National Licenses  (377)
  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Luminescence 40-41 (1988), S. 585-586 
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Tetrahedron 50 (1994), S. 1199-1210 
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2921-2933 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band structures of n-i-n-i doping superlattices are found using a self-consistent calculation based on the envelope function formalism. The modulation potentials, the charge density distributions, the dispersion relationships, and the occupation of the subbands in the n-i-n-i superlattices are computed and their dependence on temperature and the structural parameters of the superlattices are studied. It is found that the modulation potentials of n-i-n-i doping superlattices are weak, and quantum effects are, therefore, also weak. The density of states in n-i-n-i superlattices can be adjusted by varying the structural parameters of the superlattices. As a result, the n-i-n-i doping superlattices behave like uniformly doped semiconductors with an adjustable density of states. The density of states is found to be temperature dependent. Electron mobilities of the n-i-n-i doping superlattices are also computed. It is found that both impurity scattering processes that are observed in uniform lightly doped semiconductor and heavily doped semiconductor can coexist in the n-i-n-i doping superlattices.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a giant magnetothermopower (GMT), giant magnetoresistance (GMR), and on magnetization measurements in Co/Cu[111] superlattices grown by molecular beam epitaxy. The maximum value of the GMT (at room temperature) was 14% for a Cu thickness of 9 A(ring) and the maximum GMR (at 4.2 K) was −26% at 7 A(ring) of Cu. Oscillations in the remnant magnetization and the saturation field as a function of Cu thickness with a period of about 10 A(ring) were observed. However, there were no oscillations in the GMT or the GMR. The maximum values of both the GMT and GMR are associated with saturation fields in excess of 40 kOe and with small remnant magnetizations. These results are consistent with the presence of antiferromagnetic coupling.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6533-6535 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Advances on permanent high-Tc superconducting magnets are reported. Materials are tested in the form of small tiles. An accurate phenomenological model of the currents in a magnetized tile predicts that the maximum trapped field BT,max∝Jcf(d), where Jc is the critical current density, d is the diameter of the single-grain tile, and f(d) is a function which increases monotonically with d. Results are reported of increasing Jc via chemical additives, and via bombardment by high-energy light ions and fission fragments. Increases in d via chemical and temperature gradients are also reported. Methods, data, and most recent results are presented. Present values are d=2 cm, and Jc=85 kA/cm2, at 77 K. A six tile minimagnet, 1.2×1.2×1.5 cm3, fabricated from earlier tiles with d∼1 cm, Jc∼45 kA/cm2, retains 1.52 T at 77 K. It is calculated that the more recent values of Jc and d will result in fields of 3 T at 77 K. BT,max also increases rapidly with T−1, and approximately doubles at 60 K.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4714-4726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, based on a two-band k⋅P theory formulation, the transmission properties of polytype interband tunneling heterostructures are analyzed. The expressions for the continuity equation and the conservation of particle in the two-band picture of the interband tunneling are rigorously derived. A general and explicit relation between the quasibound state and the transmission resonance is established. Close-form analytical expressions for the transmission coefficient and the resonant condition are also derived. Our analysis provides reasonable explanations to all available experimental results in the polytype interband tunnel heterostructures, and insight to the design of the interband tunnel devices. In particular, the double quantum well structure is examined in detail for achieving strong resonances and multiple negative differential resistances.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1542-1544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a recent experiment on resonant interband tunneling (RIT) diodes and the measured room temperature peak-to-valley (P/V) current ratio of 104:1 which represents the highest P/V ratio ever reported in any tunneling device. The RIT diode studied in this work consists of an InGaAs/InAlAs double-quantum well system embedded in a pn junction structure grown on InP.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1520-1525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of radio frequency (rf) air plasma process-induced defect states in 50 Ω cm n/n+ epitaxial silicon are investigated by junction capacitance techniques. Capacitance-voltage measurements reveal the presence of a thin oxide layer of about 180 A(ring) on the 30-min plasma treated silicon sample. Deep level transient spectroscopy shows the existence of various defects in the sample. These consists of a dominant bulk electron trap labelled as E(0.46) at 0.46 eV below the conduction band, as well as continuously distributed interface states. The spectral dependence of the optical cross section for the defect levels were measured by deep level optical spectroscopy. A simple analysis indicates that a phonon mode ((h-dash-bar)ωp=28 meV) couples to the defect E(0.46). Its electron-phonon coupling strength is rather weak with a Franck–Condon shift of 0.04 eV. Defect E(0.46) anneals out at a fairly low temperature of about 120 °C. Etching off the oxide layer in a diluted HF solution was found to eliminate the E(0.46) defect level. This is tentatively explained as due to passivation of the defect E(0.46) by hydrogen from the HF solution.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 718-719 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on persistent field in a quasipermanent magnet made of high temperature superconductor. The material has an average of 40% molar excess of Y, relative to Y1Ba2Cu3O7 and has been irradiated with high energy light ions at 200 MeV. The magnet, which traps 1.52 T at 77.3 K, traps nearly 4 T at 64.5 K. No evidence of giant flux jump or sample cracking was observed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4579-4585 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of coupling between quantum wells on the optical gain has been examined here. Although the results of the calculations mostly agree with previous qualitative expectations of gain suppression with coupling, there are some important exceptions. It is shown that the dependence of peak gain or threshold current density is not a monotonic function of the barrier thickness, and more importantly there are barrier thicknesses (beyond the almost opaque barrier case) for which optical gain can be enhanced and threshold current density reduced as compared to the values for an uncoupled structure. Results and discussion for the gain peak and threshold current density of a GaAs/Al0.3Ga0.7As double quantum well system are presented as a specific example
    Type of Medium: Electronic Resource
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