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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Fish physiology and biochemistry 17 (1997), S. 143-153 
    ISSN: 1573-5168
    Keywords: goldfish ; activin ; inhibin ; receptors ; perifusion ; immunocytochemistry ; cloning ; gene expression
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Activin (βAβA, βAβB and βBβB) is a dimeric protein that belongs to the transforming growth factor-β (TGF-β) superfamily of growth factors and is involved in the regulation of many physiological and developmental processes. Recently, we have demonstrated that porcine activin stimulated goldfish gonadotropin-II (GTH-II) and growth hormone (GH) secretion from dispersed pituitary cells in static culture and pituitary fragments in perifusion. The action of activin in the goldfish is unique in that it has an acute stimulatory effect on the secretion of GTH-II and GH, whereas in mammals activin usually exhibits long-term stimulatory actions on FSH secretion. The action mechanism of activin is different from that of gonadotropin-releasing hormone (GnRH). Using domain-specific antibodies against mammalian activin subunits, we subsequently demonstrated the existence of immunoreactive activin subunits (βA and βB) in the goldfish ovary, testis, pituitary and brain, suggesting endocrine, paracrine and autocrine roles for activin in the regulation of goldfish reproduction. Both activin βA and βB subunits have been cloned from goldfish genome by polymerase chain reaction (PCR). Using the PCR fragments as probes, we have cloned a full length cDNA coding for activin βB subunit from the goldfish ovary. Both activin βA and βB subunits show high homology to those of other vertebrates with the βB subunit much more conserved (93 and 98% identity with human and zebrafish βB subunit, respectively). The identity of the cloned βB subunit was further confirmed by expression in the Chinese hamster ovary (CHO) cells and detection of the specific activity of activin in the culture medium. The messenger RNA of activin βB subunit is expressed in a variety of goldfish tissues including ovary, testis, brain, pituitary, kidney and liver, suggesting a wide range of physiological roles for activin in the goldfish. We have also cloned a full length cDNA coding for the activin Type IIB receptor from the goldfish ovary, suggesting that activin may have paracrine or autocrine actions on the ovarian functions. The identity of the cloned receptor was confirmed by specific binding of125 I-activin on COS-1 cells transfected with the cloned Type IIB receptor.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 193 (1993), S. 711-717 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2488-2494 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: If a modulation-doped AlGaAs/GaAs heterostructure is illuminated by light, photoexcitation of deep levels in the GaAs substrate leads to some interesting effects. Below 100 K, the heterostructure shows a persistent photoconductivity effect. Moreover, a strong persistent channel depletion is observed at low temperatures when a small negative voltage is applied to the substrate contact (backgate). The latter effect is explained by a double-layer model of GaAs where the GaAs side of the heterostructure consists of (1) a buffer layer and (2) a semi-insulating substrate. Under illumination, most of the applied negative voltage drops across the very thin buffer layer, and the enhanced electric field in the layer exerts a very strong influence on the conducting channel.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4489-4493 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of ZnO quantum dots (QDs) capped with polyvinyl pyrrolidone (PVP) molecules have been investigated. It is demonstrated that surface modification by PVP can dramatically change the emission spectra of the ZnO QDs. At the optimized condition with a PVP/Zn2+ ratio of 3:5, the photoluminescence (PL) spectrum of ZnO QDs shows a strong ultraviolet (UV) emission while the low energy green emission is fully quenched. This is a result of the surface passivation of the ZnO QDs by the PVP molecules. The origin of the green emission is attributed to the surface states associated with oxygen vacancies. Temperature and excitation power dependent PL studies suggest that the UV emission is associated with localized states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 760-762 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemically hybridized CdS-poly(N-vinylcarbazole) (PVK) nanocomposites with different molar ratios of CdS to PVK were prepared. A variety of techniques including optical absorption, photoluminescence (PL), photocurrent spectroscopy, and time-resolved PL were employed to investigate the properties of CdS–PVK nanocomposites. A significant enhancement of photoconductivity was observed in CdS–PVK nanocomposites as compared to pure PVK and CdS/PVK nanoblends. We interpret this result as the improved interface quality between CdS and PVK in CdS–PVK nanocomposites, which facilitates fast interfacial carrier transfer and thus increases the charge generation efficiency. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3595-3597 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostatic pressure up to 9 GPa. Both the emissions from the GaNAs well and GaAs barrier are observed. The GaNAs-related peak shows a much weaker pressure dependence compared to that of the GaAs band gap. A group of new peaks appear in the spectra when the pressure is beyond 2.5 GPa, which is attributed to the emissions from the N isoelectronic traps in GaAs. The pressure dependence of the GaNAs-related peaks was calculated using the two-level model with the measured pressure coefficients of the GaAs band gap and N level as fitting parameters. It is found that the calculated results deviate seriously from the experimental data. An increasing of the emission intensity and the linewidth of the GaNAs-related peaks was also observed and briefly discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense wide-band photoluminescence (PL) was observed at room temperature from both SiC thin films grown on silicon substrates by hot-filament chemical vapor deposition and anodized SiC thin films formed by electrochemical anodization in HF–ethanol solution. It was found that prolonged irradiation with ultraviolet light from a He–Cd laser (325 nm, 10 mW) generally enhanced the PL intensity of as-grown SiC but induced a new PL band in anodized SiC at room temperature. The light-induced PL emission in anodized SiC was centered at the energy between 2.1 and 2.2 eV in comparison with the initial peak position of about 1.9 eV. These effects were also temperature dependent. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1463-1465 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature grown AlGaAs/GaAs multiple quantum well structures were characterized by photoluminescence (PL) spectroscopy. The samples were grown at 270–400 °C and annealed at 500–900 °C. After anneal, photoluminescence quenching was observed for the samples grown at temperatures below 350 °C, and found to show a strong dependence on the growth and anneal temperatures. The luminescence intensity for the PL-quenched sample exhibits a power law dependence on the excitation level with an exponent close to 2, indicating a bimolecular recombination process in parallel with strong nonradiative recombination. The photoluminescence quenching upon anneal is attributed to the formation of arsenic clusters that serve as new nonradiative recombination channels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2114-2116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A voltage-controlled tunable two-color infrared detector with photovoltaic (PV) and photoconductive (PC) dual-mode operation at 3–5 μm and 8–14 μm using GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and bound-to-continuum GaAs/AlGaAs quantum wells is demonstrated. The photoresponse peak of the photovoltaic GaAs/AlAs/GaAlAs DBQWs is at 5.3 μm, and that of the photoconductive GaAs/GaAlAs quantum wells is at 9.0 μm. When the two-color detector is under a zero bias, the spectral response at 5.3 μm is close to saturate and the peak detectivity at 80 K can reach 1.0×1011 cmHz1/2/W, while the spectral photoresponsivity at 9.0 μm is absolutely zero completely. When the external voltage of the two-color detector is changed to 2.0 V, the spectral photoresponsivity at 5.3 μm becomes zero while the spectral photoresponsivity at 9.0 μm increases comparable to that at 5.3 μm under zero bias, and the peak detectivity (9.0 μm) at 80 K can reach 1.5×1010 cmHz1/2/W. Strictly speaking, this is a real bias-controlled tunable two-color infrared photodetector. We have proposed a model based on the PV and PC dual-mode operation of stacked two-color QWIPs and the effects of tunneling resonance with narrow energy width of photoexcited electrons in DBQWs, which can explain qualitatively the voltage-controlled tunable behavior of the photoresponse of the two-color infrared photodetector. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Luminescence 40-41 (1988), S. 363-364 
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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