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  • 1
    Electronic Resource
    Electronic Resource
    In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5108-5110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films have been deposited in situ onto III-V superlattice substrates. The substrates were GaAs/AlAs superlattices grown by molecular beam epitaxy onto GaAs substrates. For 5000-A(ring) -thick YBCO films grown at 615 °C substrate temperature, we have obtained Tc of 73 K. For thinner films the Tc's are lower, indicating poor interfaces. However, the onset of the superconducting transition is 90 K in all cases. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM) show these films to be polycrystalline. TEM shows an interaction layer of about 1000 A(ring) at the interface. Low-temperature cathodoluminescence measurements of the substrate show that atomic interdiffusion has intruded at least 5000 A(ring) below the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349020
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  • 2
    Electronic Resource
    Electronic Resource
    Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2397-2402 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization modulation is used to investigate the polarization dependencies in the low-temperature photoluminescence (PL) and the photoluminescence excitation (PLE) of GaAs/AlGaAs quantum wire arrays. The modulation technique employing a photoelastic modulator is described and its implementation in the experimental setup of the PL and PLE experiments is presented. In the PL experiment the technique is used to analyze the emitted light with respect to its polarization, whereas for the PLE experiment the polarization of the exciting light is modulated, probing the polarization dependence of the absorption of the light. Since the modulation of the light is restricted to the polarization, the polarization dependence can be measured simultaneously with the PL or PLE intensity. The versatility and the sensitivity of the technique is exemplified by presenting results of polarized PL and PLE obtained on quantum wire samples grown on the vicinal (100) surface of GaAs by molecular-beam epitaxy that show a considerable anisotropy in the linear polarization for both the PL and PLE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351096
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  • 3
    Electronic Resource
    Electronic Resource
    p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7952-7954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of p on n HgCdTe heterostructures grown by molecular beam epitaxy on GaAs(211) B substrates have been analyzed by transmission electron microscopy. The HgCdTe absorber layer is grown on a CdTe buffer and doped n type with indium. The p-type arsenic dopant is incorporated in the heterostructure during growth into a HgTe/CdTe cap superlattice and annealed ex situ to form the random alloy. The active p-n junction is formed below the as-grown p-n interface as a result of As diffusion. We compare the device performance with the microstructural defects in the various regions of the device layers and show the importance of dislocations near the p-n junction as well as in the n layer in influencing device quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354093
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  • 4
    Electronic Resource
    Electronic Resource
    Strain-induced carrier confinement in a buried stressor structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6564-6568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of strain-induced confinement of carrier into wires and boxes in a buried stressor structure is theoretically investigated. The strain distribution and the corresponding strain induced modulation of the band gap is dependent not only on the material properties but also on the geometrical parameter of the structure. A potential well of 30 meV is available for both electron and light hole. For a box stressor, up to 60 meV modulation in the band gap is estimated for a GaAs QW parallel to the In0.35Ga0.65As stressor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348867
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties and imaging of Mn-implanted GaAs semiconductors : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5296-5298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x-ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room-temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single-domain state predominates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361356
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  • 6
    Electronic Resource
    Electronic Resource
    Electron beam irradiation enhancement of Al-Ga interdiffusion at GaAs/AlGaAs quantum well interfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of room-temperature electron beam irradiation on the Al-Ga interdiffusion at GaAs/AlGaAs quantum well heterointerfaces is investigated with low-temperature cathodoluminescence spectroscopy. The interdiffusion is enhanced by defects generated through an irradiation with a 400 keV electron beam. After room-temperature irradiation with a dose of ∼1.5×1017–2.5×1017/cm2 and subsequent rapid thermal annealing at 900 °C for 1 min, an interdiffusion length of 3–5 A(ring) is obtained. The electron beam induced damage tends to saturate with increasing irradiation dose, and the formation of defect cluster at high dose limits the defect introduction and, thus, the interdiffusion at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103669
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  • 7
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3291-3293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a giant magnetoresistance effect in a low-temperature (LT-)GaAs/MnAs nanoscale ferromagnet hybrid structure. The MnAs nanomagnets are formed by ion implantation of Mn into LT GaAs and subsequent annealing. We have studied the magnetotransport using a vertically biased p+-GaAs/LT-GaAs:MnAs/p+-GaAs structure. A negative magnetoresistance (Δρ/ρ=[ρ(B)−ρ(0)]/ρ(0)) of up to −80% (B=7 T) is observed at low temperatures (T〈20 K), which changes its sign from negative to positive between T=15 K and T=20 K. The value of the positive magnetoresistance decreases with increasing temperature from +115% (20 K) to +1.4% (300 K). The magnetoresistance variations with B and T are correlated with the nanomagnet spacing in the structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122748
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  • 8
    Electronic Resource
    Electronic Resource
    Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 692-694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the growth of InGaN/GaN multiple quantum well (MQW) structures, a novel defect (called the "V-defect") initiates at threading dislocations in one of the first quantum wells in a MQW stack. This defect is common to almost all InGaN MQW heterostructures. The nature of the V-defect was evaluated using transmission electron microscopy (TEM), scanning TEM (STEM), and low-temperature cathodoluminescence (CL) on a series of In0.20Ga0.80N/GaN MQW samples. The structure of the V-defect includes buried side-wall quantum wells (on the {101¯1} planes) and an open hexagonal inverted pyramid which is defined by the six {101¯1} planes. Thus, in cross section this defect appears as an open "V". The formation of the V-defect is kinetically controlled by reduced Ga incorporation on the pyramid walls ({101¯1} planes). The V-defect is correlated with the localized excitonic recombination centers that give rise to a long-wavelength shoulder in photoluminescence (PL) and CL spectra. This long-wavelength shoulder has the following characteristics: (i) its intensity is correlated with the side-wall quantum wells; (ii) the temperature independence of the full width at half maximum strongly supports a localized exciton recombination process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120844
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  • 9
    Electronic Resource
    Electronic Resource
    Morphology definition by disclinations and dislocations in a mesostructured silicate crystal (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 620-622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Curved surface morphologies resulting from disclinations are unusual in inorganic phases because the relatively large lattice energies generally permit only translational dislocations. In this letter, we show, however, that disclinations can be readily observed and identified in composite organic/inorganic phases. Disclinations and dislocations in MCM-41, a two-dimensional hexagonal (p6mm) mesophase crystal synthesized using silicate and surfactant precursors, were investigated by using transmission electron microscopy. We observed two types of dislocations and two types of disclinations. All dislocations observed are of the smallest Burgers vector a (the basis vector). Dislocation dipoles and disclination quadrupoles appear more frequently than isolated ones. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119810
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  • 10
    Electronic Resource
    Electronic Resource
    Superconducting YBaCuO thin films on GaAs/AlGaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBaCuO (1-2-3) thin films have been deposited on GaAs by laser ablation, in the presence of an oxygen plasma, at a substrate temperature of 600 °C. The (100) GaAs had a thin (100 A(ring)) Al0.3Ga0.7As cap layer, in order to prevent decomposition of the GaAs. The as-deposited YBaCuO film had a Tc (onset) of 80 K and a Tc (zero) of 20 K. Transmission electron microscopy studies showed the presence of voids in the GaAs, ∼1000 A(ring) in length, and extending 500 A(ring) into the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103041
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