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  • 1
    Electronic Resource
    Electronic Resource
    Comment on: "The infrared spectrum of the ν3 band of TiF4'' (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 5209-5210 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456542
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  • 2
    Electronic Resource
    Electronic Resource
    Mixture distributions fitted to instrument counts (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1347-1352 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A technique for fitting mixture distributions to discrete and continuous instrument count data is presented. The use of the EM algorithm for performing maximum likelihood estimation is introduced and advantages over other methods are discussed. Equations are presented for fitting mixtures of Poisson distributions and mixtures of normal distributions. Examples of the fitting of these two types of mixture distribution are given, and it is shown how standard errors of the parameter estimates can be obtained from within the framework of the fitting process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142497
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  • 3
    Electronic Resource
    Electronic Resource
    Angular distributions of sputtered zirconium atoms (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5887-5898 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ion beams with energies in the range 1–2 keV are used to sputter neutral Zr atoms from a polycrystalline surface. Laser induced fluorescence detection is used to obtain angular distributions of sputtered neutrals as a function of ion impact direction, ion mass, ion energy, and spin–orbit state of the exiting atoms. About 40% of the sputtered atoms are excited. Angular distributions depend weakly on ion mass and energy. The angular distributions are fitted well by a modified form of the Roosendaal and Saunders model of sputtering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464880
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  • 4
    Electronic Resource
    Electronic Resource
    An instrument for measuring angular distribution of sputtered neutral atoms (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 452-459 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus utilizing laser-induced fluorescence (LIF) has been developed to measure high-resolution angular distributions of sputtered neutral atoms. LIF provides sensitive detection, a feature necessary to monitor the low atomic fluxes inherent to angularly resolved sputtering measurements in the static sputtering regime. The apparatus incorporates a detector assembly which rotates about the sample in an ultrahigh vacuum (UHV) chamber, allowing a large range of angular measurements at different ion beam incidence angles. Laser light is brought to the detector in the UHV chamber via a single optical fiber and fluorescence photons exit the chamber via a fiber bundle. The optical fiber and fiber bundle are mounted in a fixed orientation on the detector, maintaining constant alignment as the assembly rotates. Angular resolution in the polar plane containing the incident ion beam and the surface normal is better than 3°. Angular resolution in the direction perpendicular to the polar plane is governed by the Doppler shift and is 0.028° for 3.2 eV atoms. Overall detection efficiency is estimated to be 5×10−9 counts per sputtered atom and 2×10−3 counts per atom entering the detection volume. Initial experiments using polycrystalline Zr to characterize the device are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144215
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  • 5
    Electronic Resource
    Electronic Resource
    Plasma protein levels in normal human fetuses: 13 to 41 weeks' gestation (1993)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 100 (1993), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objective To establish reference ranges for the levels of alpha-fetoprotein, albumin, prealbumin (transthyretin) alpha-1-antitrypsin, transferrin, ceruloplasmin and total protein in the plasma of normal human fetuses and newborn babies.Design Prospective study of individual normal cases to fulfil objectives.Setting Pathology laboratories of the University of Edinburgh and the biochemistry laboratories of the University of Keele.Subjects Twenty-two normal fetuses 13 to 22 weeks of gestation and 66 babies born between 24 and 41 weeks gestation.Results Albumin is the predominant plasma protein throughout gestation. The levels of alpha-fetoprotein and prealbumin fell significantly with increasing gestation, whereas the concentrations of the other proteins studied increased. The ratios of individual proteins to total protein demonstrated similar trends.Conclusions This study provides developmental profiles of normal human fetal plasma proteins to serve as possible reference data for abnormal fetuses. Declining levels of prealbumin (transthyretin) were unexpected and suggest a functional role for this protein in early pregnancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1993.tb14313.x
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  • 6
    Electronic Resource
    Electronic Resource
    Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2331-2332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A micrographic investigation of the effect of mercury exposure on silicon substrates was conducted. Mercury was found to leave a residue on the silicon surface. A further study was conducted to determine the extent of electrical degradation of Si Schottky contacts due to the presence of a contaminant mercury residue between the metal and the semiconductor. It was concluded that such a layer caused uncertainties in subsequent resistivity measurements, higher capacitance-voltage (C-V) barrier heights, and observable leakage currents in current-voltage (I-V) plots taken from mercury-contaminated Si Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102052
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  • 7
    Electronic Resource
    Electronic Resource
    Selective dry etching of silicon with respect to germanium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1436-1438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin ((approximately-equal-to)3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102490
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  • 8
    Electronic Resource
    Electronic Resource
    Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101115
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  • 9
    Electronic Resource
    Electronic Resource
    Positron annihilation study of an Fe14Nd2B-type permanent magnet alloy (abstract) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3780-3780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Dy-substituted Fe14Nd2B-type permanent magnet alloy (Crumax 32) has been studied by positron annihilation lifetime spectroscopy, and also magnetic coercivity and microstructural analysis, to evaluate the effects of thermal treatment of the material. The results of this study show that the room temperature lifetime spectra can be modeled accurately using a partially constrained three-component fit. The variations in lifetime spectra induced by thermal treatment of the sintered magnet can be correlated with the concomitant decreases in coercivity and with a decrease in the surface area of free α-Fe as indicated by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338643
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  • 10
    Electronic Resource
    Electronic Resource
    Potential antisecretory antidiarrheals. 2. .alpha.2-Adrenergic 2-[(aryloxy)alkyl]imidazolines (1990)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 33 (1990), S. 614-626 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00164a024
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