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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4014-4019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation into metals has the potential of producing metastable compounds and solutions that cannot be achieved using conventional processing methods. However, when high doses of heavy ions into metals are necessitated, the technique is often limited by sputtering effects which dictate a maximum achievable implanted ion concentration in the target. Sputtering of light materials (such as C) by heavy ions is much less significant, however. This study investigates the feasibility of "protecting'' a metal target surface from sputtering during a heavy ion implant by using a thin "sacrificial'' C layer deposited on the target surface. Uncoated and C-coated (∼1000-A(ring)-thick C) Cu targets were bombarded with 600–1000 keV I− ions to a total dose of ∼2×1017 I/cm2. Uncoated samples displayed typical saturation behavior, retaining between 17% and 42% of the dose, depending on the energy. The maximum I concentration achieved in the uncoated samples was about 6 at. %. Excellent results were achieved with the C-coated samples, with retentions of 100% and peak I concentrations between 18 and 33 at. %. Significant mixing of C was found to occur at the C/Cu interface, however as the implantation energy was increased the I concentration profile shifted more deeply into the sample and away from the mixed C/Cu region. This suggested that higher energies and careful tailoring of the implant parameters can eliminate any problems with C mixing.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2131-2133 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped layers of GaAs were grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). The results showed that, in LP-MOVPE, growth rate plays a crucial role in confinement of dopants and growth temperature has only a secondary effect. Effects of purge time, doping temperature, and doping period on sheet carrier concentration of delta-doped layers were studied. The effect of growth rate on confinement of dopants was discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6619-6624 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our previous work [Clapham, Whitton, Ridgway, Hauser, and Petrovic, J. Appl. Phys. 72, 4014 (1992) and Clapham, Whitton, and Ruck, Nucl. Instrum. Methods B 80/81, 501 (1993)] has shown that the sputtering limitation often associated with high-dose, heavy ion implantation into metals can be overcome by using a thin (∼1000 A(ring)) C sacrificial layer. This layer, which is deposited on the surface prior to implantation, sputters slowly during bombardment, thus protecting the underlying target. The present study further investigates the potential of the sacrificial layer technique, using Al as a sacrificial layer on a Ni target implanted with high doses (to 7×1017 ions/cm2) of 5 MeV Pt ions. The Al layer was found to be very effective in enhancing retention of the implanted Pt, with 100% retention and a maximum concentration of 19 at. % Pt achieved for the highest dose. This compares with a saturation concentration of ∼10 at. % Pt when no sacrificial layer was used. The mixing behavior of Al into Ni was consistent with other studies conducted at lower ion energies. The temperature region of radiation-enhanced diffusion was established, and the phase Ni3Al was found to be present in the Al/Ni mixed region after Pt bombardment.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: In an attempt to understand the cause of neurodegeneration in Alzheimer's disease, the toxic effects of β-amyloid (Aβ) peptides have been widely studied. At high micromolar concentrations Aβ peptides have been demonstrated to be acutely toxic to various cell types. At submicromolar concentrations, Aβ peptides have been suggested to inhibit cellular metabolic activity, due to their inhibition of the ability of cells to metabolize the oxidoreductase substrate 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT). Here we show, first, that MTT reduction surprisingly leads to a breakdown in PC12 cell membrane integrity and cell death, presumably through the formation of a crystalline formazan product, and, second, that pretreatment of PC12 cells with nanomolar concentrations of Aβ peptide, rather than inhibiting their metabolic activity, increases the susceptibility of these cells to the secondary toxic effect of formazan crystal formation. These results suggest that low nanomolar concentrations of Aβ render membranes more susceptible to damage by a secondary insult, in this case, MTT reduction. It is plausible that such an effect, when combined with additional risk factors, could contribute to the neurodegeneration that occurs in Alzheimer's disease.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8482-8487 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle 〈30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2052-2055 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication are reported the measurements and analyses of the dependence of the high-field magnetoresistivities (ρxx and ρxy) on the current density in AlGaAs/GaAs heterojunctions. The strong current dependence of spin-up and spin-down levels can be observed both for ρxx and for ρxy. It was found that at low temperatures and in strong magnetic fields a quantity R=B(dρxy/dB), with B the magnetic field, exhibits similar line shape and non-ohmic behavior to those of ρxx, which dramatically confirms the unresolved proportionality ρxx∼R. In high magnetic fields R shows a stronger oscillation structure, especially for spin levels, than that observed in ρxx. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3010-3012 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p+-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×106 Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Micron And Microscopica Acta 18 (1987), S. 211-212 
    ISSN: 0739-6260
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Experimental Cell Research 196 (1991), S. 270-278 
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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