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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 380-383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflective spectra of the Bragg reflectors applied to GaAs infrared light emitting diodes were simulated. Bragg reflectors are composed of alternating Al0.2Ga0.8As/AlAs layers where the ratio of high- and low-refractive indices is as small as 1.16. The reflectance bandwidth can be broadened by employing chirped structures where the optical thicknesses of the respective layers are changed arithmetically. On the other hand, for chirped Bragg reflectors, resonant reflection drops appeared at some wavelengths. These drops can be corrected by inserting periodic alternating layers. The reflectance band of 80% reflectivity is 2.7 times as wide as that of the conventional reflector of the periodic sequence in the case of 66 layer stack.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the results of the transmission electron microscope study of ordered and modulated structures in InGaP alloy semiconductors grown on (001) GaAs substrates by metalorganic vapor phase epitaxy, chloride-vapor phase epitaxy, and liquid phase epitaxy. Strong ordering of CuPt-type has been observed in InGaP grown by metalorganic vapor phase epitaxy at 630 °C, which is associated with an abnormality in the photoluminescence peak energy. CuPt-type ordered structures have also been observed in crystals grown by chloride-vapor phase epitaxy, but the degree of ordering is weaker and crystals grown at 576–740 °C exhibit normal photoluminescence peak energies. On the other hand, in crystals grown by liquid phase epitaxy, no ordered structure is found and the crystals exhibit normal photoluminescence peak energies. There is no dependence of modulated structures on the growth method since they are observed in all crystals. These results also lead us the previous conclusion by Kondow and co-workers that the ordered structures are not generated under thermal equilibrium conditions but rather by the diffusion and reconstruction of deposited atoms on the growth surface.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 4725-4726 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The insignificance of the "background'' signal due to the •CFCl2 radical in the ESR study of radical cations using the CFCl3 has been demonstrated by calculating the dipolar broadening of the hyperfine interaction.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 159-160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross sections of the patterns fabricated in (100) GaAs by 100-keV gallium focused ion beam have been studied using a scanning electron microscope (SEM). The probe size of the ion beam is 0.1–0.15 μm at the current of 100 pA. The etched depth becomes saturated at the high dose region (about 5.0×10−6 C/cm) because of the redeposition effect. The pattern profile becomes asymmetric if it is made up of several adjacent lines perpendicular to the beam scanning direction due to the redeposition effect and the increase of sputtering yield for each scan, which is caused by the change of ion beam incident angle. These effects can be eliminated by the use of multiwriting method.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 801-806 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process to form a periodically poled polymer film by photoisomerization is described. A poled film of polymethylmetaclyrate containing 5 wt % of 4-(4-nitrophenylazo)aniline (Disperse Orange 3) was exposed to an Ar+ laser beam using a photomask of a 100 μm period grating. Disorientation of the chromophore molecule resulted in decrease of d33 in the photoisomerized domain. Quasiphase-matched second-harmonic generation is demonstrated experimentally using a processed film. Phase-matching was confirmed by tuning the fundamental wavelength around 1200 nm. The effective propagation length due to a tightly focused fundamental wave and the influence of the absorption loss are discussed. The depoling process by photoisomerization is compared with photobleaching, optical poling, and electron beam treatment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 154-159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain distribution in a ZnSe/CdSe/ZnSe strained single quantum well structure grown on a vicinal GaAs substrate is investigated by calculating the positions of all the atoms in the structure. The strain distribution around atomic step edges is inhomogeneous, while that in terrace regions is the same as that of quantum wells grown on just-oriented substrates. The inhomogeneity extends for only 2 or 3 ML along the vicinal direction from the step edge. Microscopic lattice-planetilting of CdSe and ZnSe epitaxial layers becomes the largest at the step edge. CdSe expands and ZnSe shrinks in the growth plane at the lateral interface of CdSe and ZnSe to minimize the total strain energy. Cd atoms at the step edge have the largest strain energy due to shear deformation. Conduction and valence band potential profiles calculated by using the strain distribution and deformation potentials are found to enhance carrier confinement into the terrace region of the quantum well, although the confinement effect is not enough to explain the experimentally observed blueshift in photoluminescence. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2829-2832 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an instrument for real-time observation of silicon carbide (SiC) crystal during the sublimation growth process by x-ray topography. It is constructed by combining an x-ray goniometer and a crystal-growth chamber. The vertical goniometer consists of three circles, an α circle for the x-ray source, a β circle for the detector, and a cursive-phi circle for the azimuthal rotation of the sample. The growing crystal boule is set at the center of the goniometer glued on a crucible lid. Transmission topographs are taken using an asymmetric (101¯1) reflection with the scattering angle 2θB=β−α from the (0001)-oriented boule. A rotating-anode 18 kW generator with a molybdenum target is employed as the x-ray source. Topographs are observed by a direct imaging system using a charge-coupled device camera. Incident and scattered x-ray beams pass through beryllium windows mounted on the bottom and top flanges of the crystal-growth chamber, respectively. The crucibles are also designed for in situ measurements so that the x-ray beam path is separated from the source materials. The in situ topographs demonstrated the movement of micropipes and other defects during the crystal growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Inc
    Journal of metamorphic geology 15 (1997), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: A large mass of dolomitic marble including many eclogite blocks occurs in orthogneisses of the Rongcheng area of the Su-Lu province, eastern China. The marble consists mainly of dolomite, calcite (formerly aragonite), graphite, forsterite, diopside, talc, tremolite and phlogopite. Aggregates of talc and calcite occur at the boundary between dolomite and diopside. Tremolite is a reaction product between talc and calcite. Eclogite blocks are rimmed by dark green amphibolite. The primary mineral assemblage in the core of eclogite is Na-bearing garnet (up to 0.2 wt% Na2O), omphacitic pyroxene, clintonite and rutile. Secondary minerals are pargasitic/edenitic amphibole, plagioclase, sodic diopside, chlorite, zoisite and titanite. The peak metamorphic conditions, based on stability of the dolomite+forsterite+aragonite (now calcite)+graphite assemblage, under conditions where tremolite is unstable, are estimated at T =610–660 °C and P=2.5–3.5 GPa (for XCO=0.001). A reaction between dolomite and diopside to form talc under tremolite-unstable conditions indicates a temperature decrease under ultra-high-pressure conditions (P 〉2.4 GPa, XCO〈0.0013). The formation of secondary tremolite is consistent with a nearly adiabatic pressure decrease post-dating the ultra-high-pressure metamorphism. The temperature decrease under ultra-high-pressure conditions preceding decompression may reflect the underplating of a cold slab, and the rapid decompression probably corresponds to the upwelling stage promoted by the delamination of a downwelling lithospheric root. The P–T  conditions of the amphibolitization stage are estimated at 〈0.9 GPa and 〈460 °C, and are similar to conditions recorded by the surrounding orthogneisses.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 54 (1990), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Freeze-dried sections (14 μm thick) of retinal layers were prepared from mice with retinal degeneration (C3H strain) and control mice (C57BL strain). The weighed sections (2–30 ng dry weight) were analyzed using our microassay methods. In the control retina, γ-aminobutyric acid (GABA) concentration and glutamate decarboxylase (GAD) activity, on a dry weight basis, increased from birth to 9 weeks of age and decreased slightly at 20 weeks. In the degenerated retina, the levels of GABA and GAD activity were higher at birth than in the control retina, and continued to increase until 20 weeks of age, at which time the GAD activity reached a markedly high level. This increase was found when the total GABA and GAD levels per retina were determined. In the normal retinal layers, GABA and GAD were confined primarily to the inner plexiform layer. In the degenerated retina, GAD activity gradually increased in the inner layers during postnatal development, but by 20 weeks the increase was most prominent in the inner part of inner nuclear layer and in the outer part of inner plexiform layer. GABA transaminase activity and its distribution were not much different in both normal and degenerated retinas during development.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental dermatology 21 (1996), S. 0 
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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