ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The interactions of co-evaporated Ti0.3W0.7 films with GaAs have been studied after annealing at temperatures in the range of 650 to 900° C for 15 min employing Rutherford backscattering, transmission and scanning electron microscopy. X-ray diffraction and energy-dispersive X-ray analysis techniques. Reaction has been found to take place at 650° C as evidenced by the presence of an AsTi compound in the region near the interface of TiW film and GaAs. Gallium diffuses out to the surface at temperatures above 750° C and causes surface morphological degradation, which can be related to the instability of the TiW Schottky barrier height at higher temperatures ≳750° C as reported in the literature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01114724
