ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this work we report on transmission electron microscopy and high-resolution x-ray diffractometry studies of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP epilayers grown by molecular beam epitaxy on InP(100) substrates. High-resolution and diffraction contrast electron microscopy measurements show the presence of different contrast zones in the epilayers. The analysis of high-resolution x-ray diffraction measurements and computer simulations ascribe these zones to the presence of a compositional gradient in the epilayers. A comparison among investigated samples grown under slightly different growth conditions combined with an analysis of the crystal defects is presented. Growth-induced small variations in the chemical composition of the epilayer can produce differences in the structural quality of the epitaxial layer. Finally, a few monolayers thick and highly strained film of InAsP, is observed in all investigated samples at the substrate/epilayer interface. The formation of this interface layer is explained by the exchange of As and P during exposure of the InP surface to As4 before the growth. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360162
