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Radiation-induced shallow donors in Czochralski-grown silicon crystals saturated with hydrogen (1994)

Markevich, V. P. ; Suezawa, M. ; Sumino, K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 7347-7350

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Far-infrared absorption has been investigated in n-type Czochralski-grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200–330 cm−1 are observed upon postirradiation annealing of the crystals at 300–550 °C. These bands are associated with ground–to–excited-state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective-mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357958

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