Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Oxygen-rich Ge samples were bombarded with fast electrons (E=4 MeV) at 80 °C and subjected to isochronal (100–340 °C) and isothermal (350 °C) annealing. Infrared absorption spectra were measured at room temperature. Preliminary irradiation of the samples is found to strongly enhance the development of the absorption bands in the range 600 to 780 cm−1 when the Ge〈Sb,O〉 crystals are heated to 350 °C. The bands are assigned to local vibrational modes of thermal donors. It is inferred from the annealing studies that a radiation-induced complex with the local vibrational modes at about 770–780 cm−1 is probably responsible for the enhanced growth of the thermal donors. Oxygen dimers are proposed as such a complex.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Semiconductors 34 (2000), S. 998-1003 
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The formation of small oxygen clusters upon heat treatment at 280–375°C was studied in crystalline silicon doped with hydrogen by high-temperature in-diffusion. The presence of hydrogen in concentrations of 1015–1016 cm−3 significantly enhances (by up to a factor of 106 at T≤300°C) the oxygen diffusivity in Si crystals. Possible mechanisms of interaction between O and H impurity atoms and the origin of hydrogen-enhanced oxygen diffusion in silicon are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7347-7350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared absorption has been investigated in n-type Czochralski-grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200–330 cm−1 are observed upon postirradiation annealing of the crystals at 300–550 °C. These bands are associated with ground–to–excited-state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective-mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4637-4637 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results related to investigations of the hydrogen (deuterium) molecule diffusivity in Si crystals are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2988-2993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation kinetics of oxygen–hydrogen (O–H) complexes which give rise to an infrared absorption line at 1075.1 cm−1 have been studied in Czochralski-grown silicon crystals in the temperature range of 30–150 °C. Hydrogen was incorporated into the crystals by high temperature (1200 °C) in diffusion from H2 gas. It was found that the observed kinetics can be explained as being due to an interaction of mobile neutral hydrogen-related species with bond-centered oxygen atoms. The binding energy of the O–H complex was determined to be 0.28±0.02 eV. An activation energy for migration of hydrogen-related species responsible for the formation of the O–H complexes was found to be 0.78±0.05 eV. It was shown that atomic hydrogen and H2*, a complex containing two hydrogen atoms, one at bond-centered site and another one at antibonding site, cannot account for the hydrogen–oxygen interaction considered. Hydrogen molecules (H2) located at tetrahedral interstitial site are suggested to be the species which interact with interstitial oxygen atoms and form the complex giving rise to the absorption line at 1075.1 cm−1. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1246-1250 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An absorption line at 1025.5 cm−1 has been observed in hydrogenated Czochralski-grown silicon crystals after irradiation with fast electrons and following annealing in the temperature range of 300–400 °C. The line was found to be related to a local vibrational mode (LVM) due to a DX-like hydrogen-related center, having a shallow donor and a deep acceptor electronic level. This LVM band was observed when the center was in the singly negatively charged state. Transformation of the defect into the neutral charge state due to photoionization resulted in disappearance of the LVM line and the appearance of several absorption lines in the range of 250–325 cm−1. These lines were interpreted earlier to be associated with ground-to-excited-state electronic transitions in an effective-mass-like shallow donor state of the center. Substitution of hydrogen by deuterium resulted in a shift of the LVM band to 1027.9 cm−1 that unambiguously indicates hydrogen incorporation into the defect. The structure of the center which gives rise to the observed absorption bands is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied spectroscopy 67 (2000), S. 904-909 
    ISSN: 1573-8647
    Keywords: germanium ; oxygen ; thermal donor ; local vibrational mode
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The vibrational absorption bands associated with some types of double thermal donors (TD) in Ge enriched with the oxygen isotopes 16O and 18O have been identified. The thermal donors were formed during heat treatment of Ge:O crystals at 300 and 350°C. Absorption spectra were measured at room temperature and at 10 K. The formation of the thermal donors was accompanied by the appearance of three absorption bands, which in the Ge:16O spectra at room temperature are located at 600, 740, and 780 cm−1. In low-temperature measurements, the bands at 600 and 780 cm−1 exhibited splitting into series of narrow lines (up to 9) associated with some types of thermal donors (TD1–TD9). The absorption spectra measured at 10 K after different cooling conditions display bistability of the first four types of thermal donors (TD1–TD4). In the samples cooled by illumination with light in the region of frequencies of the fundamental absorption of Ge, pairs of lines are observed that belong to the bistable thermal donors in the helium-like configuration of double donors (DD). After cooling the samples in the dark, these pairs of lines are replaced by three new bands, which belong to local vibrational modes of bistable thermal donors in the low-energy neutral configuration. Based on the isotopic shift of the local vibrational modes of the thermal donors in Ge:16O and Ge:18O, a rigorous proof of the oxygen atoms entering into the composition of thermal donors is obtained.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...