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  • Articles: DFG German National Licenses  (100)
  • 1995-1999  (58)
  • 1990-1994  (42)
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  • Articles: DFG German National Licenses  (100)
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Year
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  • 11
    Electronic Resource
    Electronic Resource
    Electrical properties of iron-silica nanocomposites synthesized by electrodeposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6835-6840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized iron particles with diameters in the range 5.5–11.1 nm were grown within a silica gel by an electrodeposition method. Electron diffraction measurements show that some of the iron particles were oxidized to Fe3O4. dc resistivity measurements over the temperature range 110–300 K show a T−1/4 variation indicating a variable range hopping transport. ac conductivity over the frequency range 100 Hz–2 MHz show an overlapping large polaron tunneling mechanism to be operative. The dielectric modulus spectra as a function of frequency were analyzed on the basis of a stretched exponential relaxation function. The values of the exponent β as extracted from this analysis were in the range 0.38–0.46. The activation energies corresponding to the maximum of the imaginary part of the dielectric modulus were in the range 0.13–0.20 eV. These are ascribed to an electron tunneling mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371759
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  • 12
    Electronic Resource
    Electronic Resource
    Electrical resistivity of silver–silica nanocomposites (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3623-3625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoparticles of silver with diameters in the range 10.3–25.7 nm were grown within a silica gel medium by an electrodeposition technique. The dc resistivity of the nanocomposites was measured over the temperature range 100–300 K. The resistivity as a function of inverse temperature shows a maximum at around 175 K. This is explained as arising due to the presence of two conduction mechanisms, viz., an electron tunnelling between metal particles and conduction through a percolated metal structure which is fractal in nature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369724
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  • 13
    Electronic Resource
    Electronic Resource
    ArF excimer laser induced photolytic growth of Si homoepitaxial films from Si2H6 at 330 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses low-temperature Si homoepitaxy on Si(100) substrates by the photolytic decomposition of Si2H6 by the 193 nm emission of an ArF excimer laser. The chemical vapor deposition process at growth rates from 0.5–4 A(ring)/min is performed in an ultrahigh vacuum chamber which, along with an ex situ HF dip and a novel in situ hydrogen clean using laser excitation, results in minimization of oxygen and carbon contamination which inhibits Si epitaxy. The growth involves photolytic decomposition of Si2H6 and the generation and adsorption of SiH2 precursors on the hydrogenated Si surface, which is the rate limiting step. Very low defect density films in terms of stacking faults and dislocation loops (less than 106 cm−2), and excellent crystallinity have been grown at 330 °C and 0.5 W laser power, as confirmed by Schimmel etching and Nomarski microscopy, transmission electron microscopy, electron diffraction and in situ reflection high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104599
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  • 14
    Electronic Resource
    Electronic Resource
    Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2198-2199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linewidth enhancement factor α as low as 0.54 in In0.2Ga0.8As/GaAs/AlGaAs strained single quantum well lasers emitting at 0.97 μm has been measured from spontaneous emission spectra below threshold. On reducing the current further, α goes down to 0.34. These low values of α have been attributed to strain in the In0.2Ga0.8As active layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104925
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  • 15
    Electronic Resource
    Electronic Resource
    Heterostructure P-channel metal–oxide–semiconductor transistor utilizing a Si1−x−yGexCy channel (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc characteristics of Si1−x−yGexCy P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1−xGex PMOSFETs. The low-field effective mobility in Si1−x−yGexCy devices is found to be higher than that of Si1−xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1−x−yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1−x−yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123386
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  • 16
    Electronic Resource
    Electronic Resource
    Optical absorption of composites of nanocrystalline silver prepared by electrodeposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver particles of average diameters in the range 10.3–25.7 nm have been grown within a gel medium by an electrodeposition technique. Detailed optical absorption characteristics in the wavelength range 250–600 nm have been investigated for nanocomposites comprising these particles dispersed in a polystyrene matrix. Absorption maximum occurs at a wavelength around 350 nm, which increases as the metal particle size is increased. Mie theory with the incorporation of a distribution of particle size gives remarkable agreement with the experimental data. The electrical conductivity as extracted from the theoretical analysis for particles with diameters ∼3 nm is found to be less than Mott's minimum metallic conductivity. This indicates the possibility of a metal insulator transition in this system, which appears to be consistent with earlier electrical conductivity measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120954
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  • 17
    Electronic Resource
    Electronic Resource
    Synthesis of crystalline carbon nitride thin films by laser processing at a liquid–solid interface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3489-3491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser induced reactive quenching at a liquid–solid interface was used for the synthesis of tetrahedrally coordinated crystalline carbon nitride on a tungsten substrate. The crystalline phase was identified by transmission electron diffraction. X-ray photoelectron spectroscopy indicated that the carbon atoms are coordinated only tetrahedrally with nitrogen—as expected for C3N4. The atomic percentage of N (considering only those atoms coordinated with C) is about 35%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117261
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  • 18
    Electronic Resource
    Electronic Resource
    Electrical resistivity of copper-silica nanocomposites synthesized by electrodeposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1149-1151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composites containing copper particles with nanometer dimensions in a silica gel medium have been synthesized by an electrodeposition technique. The precursor composition of the gel was in the system Cu(NO3)2–SiO2 and the copper particle diameters were in the range of 3.2–11.4 nm. The dc electrical resistivity of pellets obtained from the nanocomposite powders was measured in the temperature range of 110–300 K. A temperature dependence with a fractional exponent of 0.25 was observed. This behavior has been explained on the basis of a variable range hopping mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368116
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  • 19
    Electronic Resource
    Electronic Resource
    Anomalous capacitance-voltage behavior due to dopant segregation and carrier trapping in As-implanted polycrystalline silicon and silicided polycrystalline silicon gates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2325-2327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses the anomalous capacitance-voltage characteristics of As-implanted polycrystalline silicon and amorphous Si gate metal-oxide-semiconductor (MOS) structures fabricated with and without a TiSi2 layer. The effects of gate bias and process parameters such as annealing temperature, process details of silicide formation, and polycrystalline silicon grain microstructure on the capacitance-voltage (C-V) characteristics have also been studied. It is shown that insufficient As redistribution at 800 °C, coupled with carrier trapping at polycrystalline silicon grain boundaries and dopant segregation in TiSi2, causes depletion effects in the polycrystalline silicon gate and in turn, the anomalous C-V behavior. The depletion tends to increase the "effective'' gate oxide thickness and thereby degrade MOS device performance. Higher temperature anneals (≥900 °C) are sufficient to achieve degenerate doping in the polycrystalline silicon gates and avoid the depletion effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102908
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  • 20
    Electronic Resource
    Electronic Resource
    Alternating current conductivity and dielectric dispersion in copper-silica nanocomposites synthesized by electrodeposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 799-805 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composites of nanometer-sized copper metal with diameters varying from 3.2 to 11.4 nm dispersed in a silica gel medium were synthesized by an electrodeposition method. The ac conductivity and dielectric dispersion of these nanocomposites were measured over the frequency range 0.2 kHz–1.5 MHz at temperatures varying from 150 to 300 K. The ac conductivity showed a frequency dependence of ∝ωn where ω is the angular frequency and n∼0.62 the latter being temperature independent. The quantum mechanical tunneling model was used to explain this result. The dielectric modulus data were analyzed on the basis of a stretched exponential relaxation function. The values of the exponent β as extracted from such analysis were found to be in the range 0.31–0.42 and were temperature independent for different gel compositions. The activation energies were estimated from the temperature variation of frequency at which the imaginary part of the dielectric modulus was maximum. The activation energy value ∼0.24 eV could be explained satisfactorily on the basis of an electron tunneling mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368140
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