Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (12)
  • 2000-2004  (5)
  • 1990-1994  (4)
  • 1980-1984  (3)
Source
Material
  • Electronic Resource  (12)
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2112-2120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550–1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346566
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Reduced chemical sputtering of carbon by silicon doping (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2216-2218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doping is a widely used method to enhance the properties of materials. Despite the recently increased understanding of the mechanisms of chemical erosion by low-energy hydrogen ions, the effect of doping on these types of processes is still not well understood. We study the erosion of Si-doped (0–30 at. %) carbon under 20 eV deuterium irradiation using molecular dynamics simulations. We show that the chemical sputtering of carbon decreases with increasing Si concentration. The reasons for the reduced sputtering yield lie in the longer Si–C interaction lengths and efficient dynamic rebonding of hydrocarbon species. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495886
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Trapping of hydrogen impurities in helium-implanted niobium and tantalum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7770-7773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trapping of hydrogen impurities at helium precipitates in helium-implanted niobium and tantalum has been studied. The samples were implanted at room temperature with 100 keV 4He+ ions to doses of (0.6–36)×1016 cm−2. Some of the samples were postirradiated with 60 keV and 4 MeV protons, and annealed at elevated temperatures up to 1070 K. The helium and hydrogen concentration distributions were characterized simultaneously using the elastic-recoil-detection-analysis technique. The hydrogen distributions were also measured by the nuclear resonance reaction 1H(15N,αγ) 12C. The observed hydrogen distributions show that defect-hydrogen complexes at He bubbles are built from the ion-irradiation-induced and pre-existing vacancies and pre-existing hydrogen impurities migrated to the associated internal surfaces and that the hydrogen impurities saturate the surfaces. Recovery energies of about 2.1 eV in Nb and about 2.7 eV in Ta were observed for the hydrogen trapping defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356611
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1710-1717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electronic stopping power of Si and Ge for MeV-energy Si and P ions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 228-230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic stopping powers of Si and Ge for 0–30 MeV 29Si and 29P ions are reported. The stopping power was studied by application of a technique of nuclear physics, the inverted analysis of Doppler-shift attenuation data. The measured values at 30 MeV are about 15% lower and at 2 MeV considerably higher than the predictions of the commonly used empirical electronic stopping powers by J. F. Ziegler, J. P. Biersack, and U. Littmark [The Stopping Power and Ranges of Ions in Matter (Pergamon, New York, 1985), Vol. 1]. The experimental nuclear stopping power was taken into account in the deduction of the electronic stopping power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106972
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Carbon nanotubes as masks against ion irradiation: An insight from atomistic simulations (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments show that carbon nanotubes can be used as masks against ion irradiation to make metallic nanowires of a few nanometers in width. In order to ascertain the limitations of this technique, we use molecular dynamics and simulate ion irradiation of multiwalled nanotubes. We derive an equation which for a given nanowire material allows one to estimate the theoretical limit on the minimum width of the wire which can be made using this technique. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1499224
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Identification of vacancy charge states in diffusion of arsenic in germanium (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 690-692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127087
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Melting temperature effects on the size of ion-induced craters (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3624-3626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent work on the sizes of craters produced by ion impacts of solids has shown that the size of the crater scales with the inverse square of the cohesive energy. This observation is in contrast to the size of craters produced in macroscopic impacts, which scale directly with the inverse of the cohesive energy. It has relied on the assumption that the melting temperature is proportional to the cohesive energy. Using computer simulations, we now show that the size scales in fact with the inverse of the product of the melting temperature and cohesive energy. This provides direct proof that the reason to the different behavior of macroscopic and ion-induced cratering is flow of the liquid produced by the ions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421237
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Defect formation in implantation of crystalline Si by MeV Si ions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 990-995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distributions of vacancy-type defects and displaced Si atoms in Si(100) produced by the room-temperature implantation of 1014–1016 12-MeV 28Si+ ions/cm2 are measured with low-energy positron- and ion-beam techniques. The observed damage regions are reproduced by computer simulations. The distribution of displaced Si atoms coincides with the deposited energy distribution in elastic collisions. At the fluence of 1×1016 Si+/cm2, no crystalline structure was found in the peak region of the deposited energy at the depth of z=6 μm. Saturation of the divacancy concentration was observed at the ion fluences 3×1015 Si+/cm2 close to the surface (z〈0.7 μm) and 3×1014 Si+/cm2 deeper in the sample (z〉1 μm). In the region z〈0.7 μm, the divacancy concentration is a factor of 4 higher than that in the region z〉1 μm. This is also found in the simulated spatial structure of collision cascades.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345709
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Diffusion of nitrogen in vanadium and niobium (1984)
    Springer
    Applied physics 34 (1984), S. 49-56 
    Details
    ISSN: 1432-0630
    Keywords: 66.30. Jt ; 61.70. Tm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of N in the group VB metals V and Nb has been studied in the previously uninvestigated temperature range 300–500 °C using ion-beam techniques. Diffusion couples were created by ion implantation. The time-dependent diffusion profiles were monitored by the use of the Nuclear Resonance Broadening (NRB) technique. New values for the solubility of N in Nb were obtained. The diffusion rates presented support recent observations of the diffusivity of interstitial impurities in body-centered cubic metals in which positive deviations from Arrhenius behaviour have been seen at high temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617574
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...