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  • Electronic Resource  (104)
  • 1995-1999  (58)
  • 1985-1989  (46)
  • 1
    Electronic Resource
    Electronic Resource
    Oxidation of diphenylamine by hydroxyl radicals and excitation of the diphenylamino and hydroxyl adduct radicals (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 4352-4357 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100266a040
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  • 2
    Electronic Resource
    Electronic Resource
    Model Hamiltonians for atomic and molecular systems (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 1003-1006 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model Hamiltonian, designed to allow larger systems to be treated with the Green's function Monte Carlo method, is introduced for atomic and molecular systems. The model reduces the statistical variance associated with Green's function Monte Carlo calculations by reducing potential energy fluctuations in the core regions. By performing calculations of Li, LiH, and Li2 we show that this method can be used to obtain energy differences with much less computer time than required for the complete interaction. Increases in efficiency for larger systems will be even greater.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456200
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  • 3
    Electronic Resource
    Electronic Resource
    Size distribution of coherently strained InAs quantum dots (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4268-4272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the InAs coverage on the size and density of coherently strained InAs islands was investigated. At moderate InAs coverages the photoluminescence signal reflects the Gaussian size distribution of small coherently strained islands. However, before the coherently strained islands transform into dislocated ones the Gaussian line shape of their photoluminescence signal changes and a narrow peak appears on the low-energy tail. We attribute this change to an accumulation of coherently strained islands at a maximum size before dislocated island transformation occurs. Effects of luminescence from dislocated islands, size-dependent relaxation processes, capture efficiencies, and dot-dot coupling are also discussed. However, our calculations and the magnetophotoluminescence, as well as the photovoltage experiments, confirm our interpretation of a size accumulation process of coherently strained islands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368644
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  • 4
    Electronic Resource
    Electronic Resource
    Pulse-radiolysis study of the reduction of oxovanadium(2+) by the hydrated electron (1986)
    s.l. : American Chemical Society
    Inorganic chemistry 25 (1986), S. 2096-2097 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00232a038
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  • 5
    Electronic Resource
    Electronic Resource
    Long range order in 2-D arrays of nanometer-sized Fe islands on CaF2/Si(111) (invited) (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5056-5056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective magnetic moment was measured as a function of Fe island size during the initial stages of Fe growth on CaF2/Si(111) in an ultrahigh vacuum scanning electron microscope equipped with an in situ SMOKE analysis chamber. This substrate was selected for its wide bandgap, chemical inertness, viability of integration into an Si based technology and the availability of nanopatterning using electron beams for producing devices. Fe grown at room temperature initially nucleates into a monodisperse distribution of 3-D islands at very high nucleation densities (8×1012/cm2). Increased Fe coverages lead to 2-D island growth. A room temperature superparamagnetic to ferromagnetic phase transition occurs as a function of Fe island radius. Mean field and Monte Carlo calculations illustrate that three distinct magnetic phases exist as a function of island diameter. Ferromagnetic order is present at room temperature when r(approximately-greater-than)3 nm, superparamagnetism is favored when 2 nm 〈 r 〈3 nm, and a frustrated random antiferromagnetic phase exists when r〈2 nm. Further depositions of Ag on superparamagnetic Fe island arrays produce Ag islands which couple the covered Fe island moments in-plane, implying that the Ag mediates the magnetic exchange between individual Fe islands within an Ag island. Implications for 2-D giant magnetoresistance devices will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361570
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  • 6
    Electronic Resource
    Electronic Resource
    The deposition and study of hard carbon films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3914-3918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon films have been deposited by rf plasma decomposition of methane at 50–1400 V negative bias and 1.3×10−3–1.3×10−1 mbar pressure. Hardness, internal stress, density, hydrogen content, and infrared absorption depending on the preparation parameters have been measured. From the IR measurements the ratio of sp3 to sp2 bonds was calculated and the total amount of hydrogen in the films was determined by elastic recoil detection (0.5〉H/C〉0.15). We found in the range of bias voltages 0〈||−VB ||〈100 V polymerlike films, in the range 100 V〈||−VB ||〈600 V diamondlike hard carbon films with high internal stress, and in the range 600〈||−VB ||〈1400 V graphitelike soft films with low stress. The density of the diamondlike films was about 2 g/cm3 and of the graphitelike films about 1.4 g/cm3. The microhardness seems to be correlated to the internal mechanical stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343355
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced superparamagnetism in two-dimensional arrays of nanometer-sized Fe islands (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2878-2880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron grown on room-temperature CaF2/Si(111) substrates form two-dimensional arrays of nanometer-sized superparamagnetic islands. Deposition of Ag on the Fe/CaF2/Si(111) produced a superparamagnetic response where the effective moment was proportional to the number of Fe islands covered by an average-sized Ag island. The nonmagnetic Ag overlayer mediates a long-range exchange between neighboring Fe islands within an individual Ag island. Monte Carlo methods are used to examine ordering in two dimensions and to set minimum interisland coupling strengths. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114815
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  • 8
    Electronic Resource
    Electronic Resource
    Size quantization effects in InAs self-assembled quantum dots (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1727-1729 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study size quantization effects in InAs self-assembled quantum dots (QDs) that are embedded in GaAs. Using capacitance, photoluminescence and photovoltage spectroscopy, we correlate the measured quantized level energies with the quantum dot sizes and densities obtained from transmission electron microscopy. With increasing dot size, we observe a strong redshift of the QD features in all our data. In the capacitance spectra, a band gap renormalization of the two-dimensional wetting layer system appears when the first excited QD state crosses the wetting layer ground state. The relative size dependence and absolute energetic position of the QD transitions determined with photoluminescence provide some information about the influence of lateral confinement and height of the QD. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118682
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of the activation energy for the heterogeneous nucleation of misfit dislocations in Si1−xGex/Si deposited by selective epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 324-326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si0.84Ge0.16/Si heterostructures with variable finite lateral dimensions (10–300 μm) and different layer thicknesses grown by selective low pressure chemical vapor deposition epitaxy at a temperature of 700 °C were investigated with regard to relaxation by formation of misfit dislocations. While in small structures only nucleation and propagation occur, the dislocation–dislocation interaction (mainly multiplication) becomes more and more important in larger structures. Therefore it was possible to separate the three different mechanisms which play a role in relaxation, i.e., nucleation, propagation, and multiplication, and to study them independently. From the analysis of the misfit dislocations at the initial stage of relaxation it was possible to determine the nucleation site density and an activation energy of 2.8 eV for the heterogeneous nucleation of misfit dislocations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118404
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  • 10
    Electronic Resource
    Electronic Resource
    Size distribution of Ge islands grown on Si(001) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 410-412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic force microscopy analyses were performed on Ge islands on Si(001) grown by low pressure chemical vapor deposition in the temperature range from 525 to 700 °C. A comparison with theoretical models describing the growth of coherently strained and plastically relaxed islands is given to describe the observations. The mean diameter of coherently strained islands is found to be 170 nm over a wide range of temperature, whereas plastically relaxed islands grow up to diameters 〉500 nm. The aspect ratio turns out to be independent of the presence of dislocations. For the sample grown at 700 °C three size regimes could be observed, whereas the sample grown at the lowest temperature exhibits no island formation. At 550 °C islands with an average diameter of 33 nm and a low aspect ratio were observed; these could prove to be interesting in applications using quantum confinement effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119553
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