Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (15)
  • 1985-1989  (15)
Source
Material
  • Electronic Resource  (15)
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of Sb, Ga, Ge, and (As) in TiSi2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5335-5345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium, Sb, and Ge were implanted into thick (about 400 nm) layers of TiSi2 prepared by metal-silicon reaction. The diffusion of the implanted atoms was analyzed by means of secondary ion mass spectrometry. Gallium was introduced because a former study had shown that the usual p-type dopant B does not diffuse in TiSi2. Germanium was used in lieu of a Si tracer. Its diffusion characteristics are compared to those of P and As (as well as Si) which had been investigated previously. Germanium and Ga diffuse readily above 600 °C, but Sb does not. Its diffusion appears to be limited to grain-boundary effects. Accumulations of the diffusing atoms are observed (except for Sb) at the silicide-silicon interface. These are due to kinetic effects, namely fast diffusion at grain boundaries and interfaces, rather than to real adsorption which is an equilibrium condition. Because diffusion in intermetallic compounds has been shown to be significantly affected by variations in stoichiometry, experiments were conducted with films implanted not only with foreign atoms but with Ti as well. These did not lead to significantly different observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340399
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effects of deuterium plasmas on silicon near-surface properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3297-3300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342666
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4975-4986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed deep level transient spectroscopic study in p-type Mg- and Zn-doped GaAs epitaxial layers grown by metal-organic vapor phase epitaxy. Dependence of deep level structures on doping concentrations and growth temperatures has been investigated. Over a wide range of growth conditions, four hole traps and an electron trap ranging in activation energy from 0.18–0.79 eV were measured in GaAs:Mg while only a single hole trap has been observed in GaAs:Zn.The presence of a certain trap and its concentration in GaAs:Mg depends mainly on the doping concentration in the layers. The total trap concentration in the GaAs:Mg decreases rapidly with doping concentration for p〉4×1017 cm−3. The physical and chemical origins of several of these traps have been identified. The Mg-doped GaAs always exhibited a greater concentration of midgap trap levels than the Zn-doped material, regardless of dopant concentration or growth temperature. The overall defect structure and dopant incorporation characteristics indicate that Zn is the preferred dopant species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342447
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Processing of La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2046-2053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-9% Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341106
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Dopant redistribution at Si surfaces during vacuum anneal (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4619-4625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectroscopy (SIMS) profiling at silicon surfaces annealed to high temperature in vacuum. Accumulation of electrically active p-type dopants is found to occur. The p-type dopant is identified by SIMS and by its diffusion characteristics as being boron. The measured doping profiles can be interpreted as indicating that the chemically cleaned surface contains boron impurities in the 1012/cm2 range that become electrically activated and diffuse into the substrate during high-temperature anneals. It is concluded that the boron exists initially in an oxidized state at the surface. Borosilicate parts present in any standard ultrahigh vacuum system are identified as a source of the pollution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338372
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    The diffusion of elements implanted in films of cobalt disilicide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2973-2980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of several elements implanted into layers of CoSi2 with a nominal thickness of 800 nm, grown by metal-silicon reaction, has been studied by secondary ion mass spectroscopy. Boron has by far the highest mobility. It is totally homogenized by heat treatment for 0.5 h at 800 °C; it displays evidence of grain-boundary diffusion at 400 °C and of lattice diffusion at 450 °C. The next group of elements, gallium, phosphorus, and germanium (used as a tracer in lieu of a silicon isotope) diffuse distinctly less rapidly, and remain nonhomogenized after annealing at 800 °C. The lattice diffusion of arsenic and antimony is not detectable (by the means presently used), even after heat treatment at the same relatively high temperature. Low-temperature effects, and effects far away from the implanted region, are dominated by grain-boundary diffusion. The lattice diffusion increases from boron to phosphorus and germanium, with activation energies determined to be 2.0 and 2.7 eV for boron and phosphorus, respectively. The results are discussed by comparison with those previously obtained with TiSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341560
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Boron, phosphorus, and arsenic diffusion in TiSi2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1634-1639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusivities of B, P, and As implanted in TiSi2 are analyzed between 500 and 900 °C by secondary ion mass spectroscopy. It is shown that P and As have high (and almost equal) diffusivities compared with B which appears immobile. This difference is presumed to be related to the very high stability of TiB2 (as compared with TiSi2) and the probable precipitation of B in the form of a titanium boride. The lattice diffusion coefficients for As and P are deduced from the diffusion profiles; they range from 10−17 to 10−14 cm2/s between 550 and 800 ° C. The activation energies are found to be, respectively, 1.8 and 2.0 eV; values close to the activation energy for the self-diffusion of Si in TiSi2, 1.8 eV. The diffusion profiles also show a high grain boundary diffusivity and an accumulation of dopant at the TiSi2–Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337252
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Reaction of titanium with germanium and silicon-germanium alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 228-230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of Ti with pure Ge and several Ge-Si alloys has been investigated with the double aim of understanding the reaction with Ge and of throwing some light on the still vexing problem of the Ti-Si reaction. With pure Ge one observes first of all the formation of Ti6Ge5 until complete consumption of the Ti is present. This is followed by the clearly identifiable nucleation of TiGe2, initially forming islands that grow laterally. With a 50-50 (at. %) alloy of Si and Ge, one still observes distinct growth steps, but there is overlap between the growth of the initial phase, and the nucleation and growth of Ti(Ge,Si)2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101444
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Shallow p+ junction formation by a reverse-type dopant preamorphization scheme (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2127-2129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device grade ultrashallow p+ junctions have been fabricated by a novel ion implantation scheme. The novelty of the method is in using antimony to amorphize silicon prior to a low-energy boron implantation. Antimony satisfies a combination of two requirements lacking from all previously applied preamorphization schemes. First, due to the heavy mass of antimony, amorphization of silicon is achieved with a minimal amount of implantation damage. Second, and most important, antimony is a dopant of an opposite type than boron. Because of this, the inevitable implant tail of the preamorphizing species serves to confine the depth of the p layer. The optimized conditions for the application of this scheme have been determined. Junctions below 100 nm in depth, with less than 200 Ω/(D'Alembertian) sheet resistance and junction leakage of 10 nA/cm2, have been achieved. The electrical results have been correlated with the residual defect structure observed by cross-sectional transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101148
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen plasma induced defects in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99810
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...