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  • 11
    Electronic Resource
    Electronic Resource
    A compact, bipolar, constant–current-voltage source for superconducting junction characterization (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3822-3824 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile, compact, constant current-voltage, bipolar power source for quasi-static or derivative measurements of the characteristics of superconducting junctions has been developed. The circuitry is based on a negative feedback strategy that is effective in maintaining constant current-voltage behavior at the junction itself and all lead resistances are included in the feedback loop. Constant currents and voltages can be delivered of up to ±0.5 A and ±0.75 V, respectively. Both fast and slow sweeps, as well as a single sweep mode, are available in variable ranges. The single sweep feature is used to avoid heating effects in low resistance junctions which are not in good thermal contact with a thermal reservoir (e.g., liquid 4 He).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140449
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  • 12
    Electronic Resource
    Electronic Resource
    Oriented thin films of YBaCu(F)O with high Tc and Jc prepared by electron beam multilayer evaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1573-1575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBaCu(F)O were deposited on SrTiO3(100) substrates by multilayer deposition from three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. The films were later annealed in a separate chamber under a flowing O2-H2O atmosphere. X-ray diffraction studies reveal that the resulting structure is highly oriented with the a axis perpendicular to the substrate. Scanning electron micrographs show a morphology consisting of an array of orthogonal, interconnecting bars with well-developed junctions. High-resolution electron microscopy and electron diffraction patterns show that these junctions are atomically abrupt and that the associated c axes are mutually perpendicular. These epitaxial films show a sharp resistive transition with Tc(R=0) as high as 90 K. The zero field critical current density, determined from magnetization measurements, is 2.9×106 A/cm2 at 4.2 K and 5.0×104 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101317
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  • 13
    Electronic Resource
    Electronic Resource
    Magnetization of sinter-forged YBa2Cu3O7−δ (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1376-1378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization and critical magnetization current densities of sinter-forged YBa2Cu3O7−δ samples of nearly theoretical density have been studied. The magnetization curves can be well fitted by Kim's critical state equation Jc(B)=α/(B0+B) with a flat plate geometry. The results revealed an anisotropy in the lower critical field and the critical current density with respect to the forging axis. The deduced critical current density in the favorable direction is larger than the value of isotropic polycrystalline samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99000
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  • 14
    Electronic Resource
    Electronic Resource
    Preparation of Y-Ba-Cu-O thin films on MgO by dc magnetron sputtering from a stoichiometric Y1Ba2Cu3O7−δ target (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y-Ba-Cu-O thin films have been deposited on MgO substrates by dc magnetron sputtering from a stoichiometric YBa2Cu3O7−δ target, after which they are subjected to a short heat treatment. Zero resistance is routinely achieved near 60 K, and one film shows zero resistance at 68.0 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98730
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  • 15
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas effect in thin epitaxial films of gray tin (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2643-2645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse magnetoresistance and Hall effect have been studied for n-type gray tin epilayers grown on (001)CdTe substrates by the molecular beam epitaxy technique. Shubnikov–de Haas oscillations were observed in samples having Hall mobilities ≥104 cm2 /V s at low temperatures. Measurements were carried out using both the dc method and field modulation techniques in the temperature range from 1.2 to 10 K and in magnetic fields up to 10 T. Beat patterns were observed in the Shubnikov–de Haas spectra which we ascribe either to inhomogeneous doping, arising from the diffusion of Cd and Te from the substrate, or to quantization of the motion in the direction parallel to the film normal. The Shubnikov–de Haas carrier concentration of a 1210 A(ring) film was determined to be nSdH =2.3×1017 cm−3, in good agreement with the Hall density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101961
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  • 16
    Electronic Resource
    Electronic Resource
    Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1403-1405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III–V quantum dot devices with conventional Si circuits. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352049
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  • 17
    Electronic Resource
    Electronic Resource
    Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2607-2609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318393
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  • 18
    Electronic Resource
    Electronic Resource
    Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3422-3424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed heating measurements on holes in a strained Ge/Si0.4Ge0.6 quantum well and electrons in a strained Si/Si0.7Ge0.3 quantum well in the temperature range 0.3–5.5 K. While a power law dependence of carrier temperature on current, Te∼Ia, was observed for both samples, the measured values for the current exponent are different: a=0.50±0.02 for the Ge sample and 0.40±0.02 for the Si sample. We attribute this exponent difference to the difference in their phonon dimensionality. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119190
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  • 19
    Electronic Resource
    Electronic Resource
    High energy resolution x-ray detection based on a coupled Fiske cavity and Josephson junction oscillator (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of a miniature microwave Fiske cavity coupled to a Josephson junction oscillator to monitor the dynamic quasiparticle population created in the surrounding superconductor by incident x rays. An expression is obtained for the phase velocities of the TM modes supported by this structure. The design has the advantage of being inherently thick—sufficient to completely absorb low energy x rays and is potentially scalable to a pixilated device with a pixel size 50 μm in linear dimension. The device represents an alternative strategy to implement the dynamic microwave absorption approach suggested by Gulian and Van Vechten and subsequent variations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117054
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  • 20
    Electronic Resource
    Electronic Resource
    Epitaxial growth of highly conductive RuO2 thin films on (100) Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115715
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