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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 264-270 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic investigation of the transport properties of GdAs single crystals is presented. We report on measurements of the electric resistivity, magnetoresistance and Hall effect performed on a stoichiometric and a nonstoichiometric sample at temperatures between 1.6 and 300 K in fields up to 10 T. The stoichiometric sample behaved as a well compensated semimetal that orders antiferromagnetically, while the nonstoichiometric sample showed some anomalies that could be explained qualitatively by the model of trapped magnetic polarons. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4501-4505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Fe-Mo-Si-B alloys with grain sizes of 15–200 nm were synthesized via crystallization of the amorphous alloy. Positron lifetime results show that there are two existing types of interfacial defects in nanocrystalline Fe-Mo-Si-B alloys, namely free-volume-sized defects and nanovoids. The free-volume-sized defect shows almost no change in size or density during grain growth, and has a mean lifetime smaller than that of its amorphous counterpart as a result of structural relaxation in the process of crystallization. However, abnormal changes in size and density of nanovoids with grain growth were noticed. It is of great interest that the variations of intermediate lifetime τ2 and intensity ratio I1/I2 with the average grain size D¯ are exactly compatible with those of microhardness. A lower density of nanovoids corresponds to a larger microhardness in the case of the present alloy system.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1573-1575 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBaCu(F)O were deposited on SrTiO3(100) substrates by multilayer deposition from three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. The films were later annealed in a separate chamber under a flowing O2-H2O atmosphere. X-ray diffraction studies reveal that the resulting structure is highly oriented with the a axis perpendicular to the substrate. Scanning electron micrographs show a morphology consisting of an array of orthogonal, interconnecting bars with well-developed junctions. High-resolution electron microscopy and electron diffraction patterns show that these junctions are atomically abrupt and that the associated c axes are mutually perpendicular. These epitaxial films show a sharp resistive transition with Tc(R=0) as high as 90 K. The zero field critical current density, determined from magnetization measurements, is 2.9×106 A/cm2 at 4.2 K and 5.0×104 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBaCuO have been prepared with (1) the a axis perpendicular to (100) SrTiO3 ; (2) the c axis perpendicular to (100) SrTiO3 ; and (3) the [110] axis perpendicular to (110) SrTiO3. Films were fabricated using a multilayer deposition technique involving three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. As deposited films, which contained polycrystalline and amorphous regions, were later annealed in a furnace under a flowing O2-H2 O atmosphere. X-ray diffraction patterns as well as scanning electron microscopy and high-resolution electron microscopy images confirm that the films are highly oriented, essentially epitaxial. The a-axis oriented film exhibits zero resistance at 90 K and a critical current density of 2.9×106 A/cm2 at 4.2 K while the c-axis oriented film exhibits a Tc of 88 K and a Jc of 0.9×107 A/cm2 at 4.2K; the Jc values were determined magnetically. The [110]-orientation film shows the sharpest transition with a transition width of 1 K and zero resistance at 85 K.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5360-5366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si/Nb superlattices with modulation wavelengths ranging from 20–200 A(ring) have been grown on sapphire substrates at 100–150 °C by dual e-beam evaporation in an ultra-high-vacuum (UHV) system. The low-angle x-ray diffraction data can be accounted for by a symmetric trapezoidal composition profile model. The intermixing at the layer interfaces is estimated to be 6–12 A(ring), depending on the substrate temperatures. In the film growth direction, the coherent domain size of the polycrystalline Nb layers scales with the Nb layer thickness. High-resolution transmission electron microscopy reveals the existence of microcrystallites in the 20-A(ring)-thick amorphous Nb layers; also resolved are the microstructure of the substrate/superlattice and superlattice/thick-Nb layer interfaces. In addition, Auger depth profiling results are also consistent with the expected composition modulation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5505-5509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBaCuO were prepared as a superlattice of three constituents on SrTiO3 (100) substrates from three electron guns using a dedicated, computer-controlled evaporator. The results indicate that the as-deposited thin films grow as a superlattice of the three constituents, with a mixture of amorphous and polycrystalline regions. After annealing, however, the multilayer films are converted to the homogeneous superconducting phase; the morphology, studied with transmission electron microscopy, consisted of an array of orthogonal interconnecting rectangular bars. The better films had Tc(R=0)=90 K and Jc=2.9×106 A/cm2 at 4.2 K. The selected area electron diffraction pattern, and the high-resolution electron microscopy images show that the interconnecting bars are single crystals of the 1-2-3 phase. During annealing, the growth rate along the a and b directions is faster than along the c direction. For the films with the a axis oriented perpendicular to the substrate, the grains nucleated directly on the (100) surface of the SrTiO3 and grow through to the film surface. The grain boundary of two interconnecting rectangular crystals (bars) is abrupt at the atomic level over most of the boundary. The superconducting films and the substrates have a well-defined epitaxial relationship; the b and c axes are parallel to the in-plane 〈001〉 substrate axes for the a-axis oriented films. Depending on the film preparation conditions, the c-axis can also be perpendicular to the substrate plane. The morphology of samples with poorer superconducting performance consists of somewhat randomly oriented crystal bars of the 1-2-3 phase.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3621-3623 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin Pb films supported by Al film were made by using cold-rolling and ion-beam thinning techniques. The morphological instability of the Pb film under electron-beam irradiation was investigated by means of in situ transmission electron microscopy observations. It has been found that under electron-beam irradiation, Pb films with an incoherent Pb/Al interface spheroidized into Pb particles, but those with a semicoherent Pb/Al interface were stable in morphology. The morphological stability of thin films depends on the microstructure and the thermodynamic property of the interphase boundary. A critical interfacial energy for the spheroidization of thin films was determined based on a thermodynamics analysis. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4183-4185 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results of complex susceptibility, static magnetization, magnetic relaxation, specific heat, and electrical resistivity measurements on an intermetallic compound Nd2AgIn3. The results indicated that Nd2AgIn3 undergoes a spin-glass transition at a freezing temperature Tf=12.6 K accompanied with the formation of short-range antiferromagnetic order. The mechanism of formation of spin-glass state in Nd2AgIn3 is different from that in diluted metallic spin-glass or uranium intermetallic compound. The existences of frustrated moments due to the triangles of nearest neighbors in Nd atomic layers and randomly distributed Ruderman–Kittle–Kasuya–Yosida interactions may be responsible for the spin glass state formed in Nd2AgIn3. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 42 (1986), S. 152-159 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 40 (1984), S. 461-466 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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