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  • 1
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    On the Influence of Soft Tissue Coverage in the Determination of Bone Kinematics using Bone Markers (2005)
    Details
    Publikationsdatum: 2021-02-05
    Sprache: Englisch
    Materialart: article , doc-type:article
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  • 2
    Digitale Medien
    Digitale Medien
    Site transfer of Si in GaAs after heavy ion MeV implantation and annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2692-2699 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical and optical properties of n-type and p-type epitaxial GaAs layers have been studied after MeV implantation of heavy (Xe and Er) ions. All implanted layers were highly resistive immediately after implantation. Annealing to only moderate temperature (725 °C) recovered the as-grown electrical properties of beryllium-doped p-type layers. However, after annealing silicon-doped n-type layers, we observe a dramatic change from the as-grown carrier profiles. After anneal, the silicon-doped, n-type layers became conductive but the carrier profiles were markedly different from the as-grown material. A significant thickness of the implanted portion of the epitaxial layers shows distinct p-type conductivity after annealing. We have correlated this p-type activity with a transfer of silicon from the gallium sublattice (SiGa) to the arsenic sublattice (SiAs). The site transfer is viewed to result from the altered thermodynamics governing site occupancy during annealing of Si in GaAs under the unique damage conditions produced by heavy ion MeV implantation. Additionally, the observed thermal stability of the site transfer process above 875 °C may have implications for implantation isolation techniques.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351518
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  • 3
    Digitale Medien
    Digitale Medien
    Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2843-2852 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4×1011 cm−2 and 6×1011 cm−2), suggesting that both traps contribute comparably to the observed current collapse.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1287127
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  • 4
    Digitale Medien
    Digitale Medien
    Does the tracer gradient vector align with the strain eigenvectors in 2D turbulence? (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 3729-3737 
    Details
    ISSN: 1089-7666
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This paper investigates the dynamics of tracer gradient for a two-dimensional flow. More precisely, the alignment of the tracer gradient vector with the eigenvectors of the strain-rate tensor is studied theoretically and numerically. We show that the basic mechanism of the gradient dynamics is the competition between the effects due to strain and an effective rotation due to both the vorticity and to the rotation of the principal axes of the strain-rate tensor. A nondimensional criterion is derived to partition the flow into different regimes: In the strain dominated regions, the tracer gradient vector aligns with a direction different from the strain axes and the gradient magnitude grows exponentially in time. In the strain-effective rotation compensated regions, the tracer gradient vector aligns with the bisector of the strain axes and its growth is only algebraic in time. In the effective rotation dominated regions, the tracer gradient vector is rotating but is often close to the bisector of the strain axes. A numerical simulation of 2D (two-dimensional) turbulence clearly confirms the theoretical preferential directions in strain and effective rotation dominated regions. Effective rotation can be dominated by the rotation rate of the strain axes, and moreover, proves to be larger than strain rate on the periphery of vortices. Taking into account this term allows us to improve significantly the Okubo–Weiss criterion. Our criterion gives the correct behavior of the growth of the tracer gradient norm for the case of axisymmetric vortices for which the Okubo–Weiss criterion fails. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.870234
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  • 5
    Digitale Medien
    Digitale Medien
    Erbium-doped silicon films grown by plasma-enhanced chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6241-6248 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial growth of erbium-doped silicon films has been performed by plasma-enhanced chemical vapor deposition using an electron-cyclotron-resonance source. The goal was to incorporate erbium as an optically active center (ErO6) through the use of metal-organic dopant sources. The characteristic 1.5 μm emission was observed by photoluminescence. Chemical analysis of the film revealed, however, that the organic ligands were decomposing and contributing to the carbon contamination of the films. Analysis of the molecular flux to the substrate indicated that the metal-organic compound used, tris(2,2,6,6-tetramethyl-3-5-heptanedionato)erbium(III), was most likely to decompose, and supply unbonded atomic erbium and not the optical active species, ErO6. Excessive carbon contamination lowered epitaxial quality and reduced the photoluminescent intensity. Photoluminescent intensity was improved by a 600 °C anneal but was strongly quenched by a 900 °C anneal. The low-temperature anneal improved crystal quality, and the high-temperature anneal resulted in silicide formation. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360571
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  • 6
    Digitale Medien
    Digitale Medien
    Ion implantation into (x11)A-oriented InP and GaAs (x≤4) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7774-7778 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si, Ge, and Be implantations were performed into (x11)A-oriented semi-insulating InP and GaAs substrates for x≤4. For comparison some of the implantations were also performed into (110)- and (100)-oriented substrates. For 200 keV/5×1013 cm−2 Si and 200 keV/3×1013 cm−2 Ge implants after 850 °C/7 s annealing, the InP is always n type with similar sheet resistance independent of the substrate orientation. No in-diffusion of Si or Ge was observed after annealing for any substrate orientation. Similar behavior was observed for Si implants in GaAs and for Si/B co-implants in both InP and GaAs. Photoluminescence measurements were performed on the Si- and Si/B-implanted InP and GaAs. For 30 keV/1.5×1014 cm−2 Be implants in both InP and GaAs, the in-diffusion of Be in (311)A-oriented substrates is less compared to the (100) material.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356612
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  • 7
    Digitale Medien
    Digitale Medien
    Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 551-558 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial growth of Er-doped silicon films has been performed by plasma-enhanced chemical vapor deposition at low temperature (430 °C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metalorganic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscattering spectrometry, secondary ion mass spectroscopy, and high resolution x-ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6-tetramethyl- 3,5-heptanedionato) erbium (III) indicated that excessive carbon contamination lowered epitaxial quality and reduced photoluminescent intensity. In this study, chemical analysis of the films also revealed a large carbon concentration, however, the effect on epitaxial quality was much less destructive. A factorial design experiment was performed whose analysis identified the key processing parameters leading to high quality luminescent films. Hydrogen was found to be a major cause of crystal quality degradation in our metalorganic plasma-enhanced process. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362759
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  • 8
    Digitale Medien
    Digitale Medien
    Photoluminescence and magnetic resonance studies of Er3+ in MeV ion-implanted GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 502-504 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (〈0.1%) of the Er in the sample is Er3+.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104621
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  • 9
    Digitale Medien
    Digitale Medien
    Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1479-1485 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We use infrared reflectance from 400 to 4000 cm−1 to evaluate cubic SiC films grown by chemical vapor deposition on Si substrates. From different regions of the spectra we determine precise film thicknesses, estimate carrier concentrations in highly doped specimens, observe roughness at both film surfaces, and detect conducting regions at the interface. We show how the roughness and the interfacial conducting region introduce nonideality into the spectra. The method is nondestructive and the information can be obtained in less than 1 h after film growth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337275
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  • 10
    Digitale Medien
    Digitale Medien
    Evidence of donor–acceptor pair recombination from a new emission band in semiconducting diamond (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2136-2138 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Steady state and time resolved photoluminescence studies of type IIb boron-doped synthetic diamond reveal a new broad red emission band that exhibits many of the features of classic donor–acceptor pair recombination. This recombination is thought to be between an as-yet unidentified neutral donor, possibly nitrogen related, approximately 3.6 eV below the conduction band edge and neutral boron acceptors at 0.37 eV above the valence band edge.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111710
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