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  • 2000-2004  (6)
  • 1995-1999  (4)
  • 2000  (6)
  • 1999  (4)
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  • 2000-2004  (6)
  • 1995-1999  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6545-6548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of highly dense SnO2 ceramic varistors are believed to be caused by the existence of potential barriers at the grain boundary. A complex plane analysis technique (to eliminate the influence of trapping activity associated with the conductance term observed via depression angle of a semicircular relaxation in the complex capacitance plane), allied with an approached Mott–Schottky model, are used to demonstrate that the potential barriers at the grain boundary are Schottky-type barriers in SnO2 varistors such as those observed in the traditional ZnO varistor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320012
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  • 2
    Electronic Resource
    Electronic Resource
    Thickness dependence of leakage current in BaBi2Ta2O9 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 1012–1014 Ω cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500–700 °C. The current-voltage (I–V) characteristics as a function of thickness for films annealed at 700 °C for 1 h, indicated bulk limited conduction and the log(I) vs V1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance–voltage measurements on films in a metal–insulator–semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of ∼5 nm was measured and calculated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124419
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2433-2435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of (Ba, Sr)TiO3 films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere produces a slight dielectric relaxation. Such dependence of the dielectric relaxation was related both to oxygen vacancies and to the presence of negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric film interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126367
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  • 4
    Electronic Resource
    Electronic Resource
    Direct Amorphous-to-Cubic Perovskite Phase Transformation for Lead Titanate (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The phase evolution of lead titanate processed by the polymeric precursor method was investigated by thermal analysis, X-ray diffraction, and high-resolution transmission electron microscopy. The results showed that the cubic perovskite PbTiO3 (PT) phase is formed from an inorganic amorphous precursor at a temperature of 444°C. A gradual transition from cubic to tetragonal perovskite PT was observed with the increase of calcination time at this temperature. HRTEM results showed that the cubic PT particles have a size of around 5 nm. The identification of cubic PT as an intermediate phase supports the hypothesis that the chemical homogeneity was kept at the molecular level during the synthesis process, with no cation segregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01427.x
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  • 5
    Electronic Resource
    Electronic Resource
    The influence of sintering process and atmosphere on the non-ohmic properties of SnO2 based varistor (1999)
    Springer
    Journal of materials science 10 (1999), S. 321-327 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The non-ohmic properties of the 98.95% SnO2 + 1.0%,CoO + 0.05%,Nb2O5 (all in mole%) system, as well as the influence of sintering temperature and atmosphere on these properties, were characterized in this study. The maximum non-linear coefficient (α = 32) was obtained for a sintering temperature of 1300°C in an oxygen atmosphere and this maximum is associated with the presence of O in SnO2 grain boundaries, as interface defects. Experimental results also indicate thermionic-type conduction mechanisms, which are associated with the potential barrier of Schottky or Poole–Frenkel types.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008933004042
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation and properties of ferroelectric BaTiO3 thin films produced by the polymeric precursor method (2000)
    Springer
    Journal of materials science 19 (2000), S. 1457-1459 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1011027624446
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental and theoretical study on the piezoelectric behavior of barium doped PZT (1999)
    Springer
    Journal of materials science 34 (1999), S. 3659-3667 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An experimental and theoretical study of the ferroelectric and piezoelectric behavior of PZT doped with barium is presented. Ab initio perturbed ion calculations was carried out. The properties, such as remnant polarization, coercive field and the coupling factor of the PZT at constant sintering temperature was compared with the Zr4+/Ti4+ ions dislocation energy and the lattice interaction energy. An agreement between the experimental and theoretical results, with a decrease of the interaction energy and an inversion of the energy stability from tetragonal to rhombohedral phase was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004647204505
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  • 8
    Electronic Resource
    Electronic Resource
    Experimental and theoretical aspects of the stabilization of zirconia. (1999)
    Springer
    Journal of materials science 34 (1999), S. 2751-2756 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using the Rietveld method, phases of ceria-doped zirconia, calcined at temperatures of 600 and 900 °C, were quantitatively analysed for different concentrations of ceria. The results show that the stabilization of zirconia depends on the dopant concentration and calcination temperature. Moreover, the theoretical calculation using the ab initio Hartree–Fock–Roothaan method indicates that the most stable phases for ceria-stabilized zirconia are cubic or tetragonal, in accordance with experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004698026465
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    High dielectric constant of SrTiO3 thin films prepared by chemical process (2000)
    Springer
    Journal of materials science 35 (2000), S. 4783-4787 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto Pt/Ti/SiO2/Si(100) substrates. The spin-coated films heat treated at 700°C were crack-free, dense, and homogeneous. Microstructural and morphological evaluations were followed by grazing incident X-ray, scanning electron microscopy and atomic force microscopy. Dielectric studies indicated a dielectric constant of about 475, which is higher than that of ceramic SrTiO3, and a factor dissipation of about 0.050 at 100 kHz. SrTiO3 thin films were found to have paraelectric properties with C-V characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004816611050
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of Ta2O5 doping on the electrical properties of 0.99SnO2·0.01CoO ceramic (2000)
    Springer
    Journal of materials science 35 (2000), S. 1453-1458 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of Ta2O5 doping in 0.99SnO2·0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 μm to 5.68 μm when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004748006457
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