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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic and transport behaviors of La0.5(Sr0.53Ca0.47)0.5MnO3 under pressure, magnetic field, and Fe doping (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3139-3144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of pressure, magnetic field, and Mn-site doping on the magnetic structure and resistive behavior of La0.5(Sr0.53Ca0.47)0.5Mn1−xFexO3 (0≤x≤0.10) have been experimentally studied. The system experiences two magnetic transitions subsequently with decreasing temperature: a paramagnetic to ferromagnetic transition and a ferromagnetic to antiferromagnetic (AFM) transition. The second magnetic transition coincides with a steep resistivity jump. In addition to reducing the critical temperature for the AFM transition (TN), the incorporation of Fe enhances the ferromagnetic order below TN as demonstrated by the gradual increase of magnetization with the content of Fe. Long-range AFM order is replaced by short-range AFM order when x exceeds 0.03, and disappears completely for x〉0.06. The application of pressure or magnetic field depresses the AFM nature of the compounds, resulting in a downward shift of TN at a rate of ∼7 K/GPa or ∼4 K/T. The most interesting observation of the present study is the greatly enhanced resistivity jump at TN, which increase from 1 to 2 orders, after the sample undergoes a pressurizing and then a pressure relieving process. Although high pressure, magnetic field, and Fe doping produce similar effects on the AFM order, the underlying physics is different. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446228
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  • 2
    Electronic Resource
    Electronic Resource
    Giant magneto-optical Kerr effect enhancement in layered CoMn/Si structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6788-6790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For sputtered Co57Mn43/Si film samples with different ferromagnetic thickness, the spectra of the complex magneto-optical polar Kerr rotation and optical constants were ex-situ measured. For 5 nm-thick Co57Mn43 film, the Kerr rotation around 4.3 eV was enhanced by a factor of about 10 times with lower loss of the signal intensity as compared to the thick film. Numerical calculations show that the enhancement effect is attributed to an interplay between optical properties of Co57Mn43 and substrate Si that has a strong interband transition (E2) near 4.3 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372842
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  • 3
    Electronic Resource
    Electronic Resource
    Structural stability and electrical properties of Sr2FeMoO6 under high pressure (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1942-1944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural stability and electrical properties of Sr2FeMoO6 under high pressure at room temperature have been studied using energy dispersive x-ray diffraction with synchrotron radiation and resistance and capacitance measurements. The x-ray diffraction results show that the structure of Sr2FeMoO6 remains stable up to 40 GPa. The equation of state of Sr2FeMoO6 is obtained from the V/V0–P relationship. The bulk modulus B0 and its first-order derivative B0′ of Sr2FeMoO6 were calculated based on the Birch–Murnaghan equation. The electrical resistance undergoes a metallic transition at about 2.1 GPa. The metallic transition may be caused by a change in the electronic structure induced by high pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496119
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  • 4
    Electronic Resource
    Electronic Resource
    Development of ECR ion sources in China (invited) : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 646-650 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recent development of electron cyclotron resonance (ECR) ion sources in China is reviewed. Emphasis is put on high charge state ECR ion sources which have been mainly developed in China by Institute of Modern Physics (IMP). Presently two ECR ion sources built by IMP for highly charged ion beams are put into operation for cyclotrons and atomic physics research. The development of high charge state ECR ion sources at IMP has progressed with a new magnetic field configuration, better condition for extraction of highly charged ions, high mirror magnetic field, large plasma volume, and special techniques to provide extra cold electrons. These techniques greatly enhance the production of highly charged ions from IMP ECR ion sources. So far more than 185 eμA of Ar11+ and 50 eμA of Xe26+ were produced by the IMP ECR ion sources. The metallic ion beam production was tested and the first beam 40Ca11+ was provided to the cyclotrons at IMP. The beam intensity of 40Ca11+ could reach 130 eμA. The next part of this article will report the latest progress of 2.45 GHz ECR ion sources in China. A 2.45 GHz compact permanent magnet proton ion source was designed and constructed by IMP. A new microwave feeding system is applied on this ion source. The ion source is able to deliver 90 mA of mixed ion beam (H1++H2++H3+) after preliminary commissioning. The article also mentions a small 2.45 GHz ECR ion source which was built by Sichuan University and used for industry applications. The dependence of plasma density and electron temperature on radio frequency power, neutral gas pressure, and different microwave windows was measured by a Langmuir probe on this ion source. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150337
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of super-Gaussian electron velocity distributions on the ion feature of Thomson scattering off two-ion plasmas (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1073-1078 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of super-Gaussian velocity distributions on the ion feature of Thomson scattering off two-ion plasmas is studied. The analytical solution to the dispersion equation shows that although both the frequencies of the two (fast and slow) ion-acoustic waves increase with the index of the super-Gaussian, the slow wave is more weakly dependent on the index due to the screening of the light ions. In the case that plasma can sustain two lightly damped ion-acoustic waves, the inferred plasma parameters such as electron temperature and plasma temperature ratio may suffer some errors without consideration of super-Gaussian electron velocity distributions. Since the relative intensity between the resonant peaks of the fast and slow waves is sensitive to the super-Gaussian index, the super-Gaussian velocity distributions may be measurable with Thomson scattering off laser-heated two species ion plasmas. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454121
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  • 6
    Electronic Resource
    Electronic Resource
    Shocks associated with the Kelvin–Helmholtz-resistive instability (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2842-2848 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, a new type of shock associated with magnetic reconnection processes has been explored using a compressible magnetohydrodynamics simulation method. The simulations have shown that, when there are strong field-aligned shear flows at the two sides of a current sheet, the coupling mode between Kelvin–Helmholtz and resistive instabilities will appear; further, reflected shocks and incident shocks can be produced at both sides of the boundary layer. Both the reflected shocks and incident shocks are fast shocks, through which the magnetic field strength, density, and temperature all increase sharply, while the plasma velocity decreases steeply. It is expected that some inhomogeneous structures can be formed at plasma boundary layer regions due to the existence of fast field-aligned shear flow driven shocks. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874133
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties and shape memory of Fe-doped Ni52Mn24Ga24 single crystals (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of a pseudoquaternary Heusler alloy, Ni52Mn16Fe8Ga24, have now been synthesized. The substitution of Fe for Mn strengthens the magnetic exchange interactions, increasing the Curie temperature to 381 K. The Fe also increases the Ni magnetic moment to 0.41 μB relative to that in the stoichiometric Heusler composition. The strain accompanying the martensitic transformation is 2.4% in zero field and can be enhanced to 4.2% by a field of 1.2 T. A field-induced strain of 1.15% has been induced along [001] in unstressed crystals with magnetic fields of 1.2 T applied at 291 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447003
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 812-814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391225
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  • 9
    Electronic Resource
    Electronic Resource
    Flux dependence of oxygen-beam-induced ripple growth on silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4334-4336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of flux on the growth of ripples on Si(111) under bombardment of oblique, 1 keV O2+ beams was investigated. We found that a low flux leads to a significantly higher ripple growth rate per ion than a high flux. This effect is attributed to a reduction in the viscous flow of the amorphized material. At low fluxes, the viscous flow is reduced because there is more thermal annealing of the radiation damage. Current models of surface roughening remain valid if the flux dependence of the viscous flow is taken into account. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428414
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  • 10
    Electronic Resource
    Electronic Resource
    Simultaneously efficient blue and red light generations in a periodically poled LiTaO3 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3006-3008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generations of efficient blue light at 447 nm and red light at 671 nm were achieved by frequency doubling and tripling of a diode-pumped, Q-switched 1342 nm Nd:YVO4 laser with a periodically poled LiTaO3 (PPLT). The blue light at 447 nm was generated by sum-frequency mixing of the fundamental at 1342 nm with the generated second harmonic at 671 nm. The first-order and third-order reciprocals of the PPLT compensated the phase mismatches of second-harmonic and sum-frequency processes, respectively, making them quasiphase matched. The resulting averaged blue light power of 51 mW and red light power of 207 mW under the averaged fundamental power of 500 mW indicate that the PPLT may be used to construct an all-solid-state blue and red dual wavelength laser. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371245
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