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  • 2005-2009  (2)
  • 1995-1999  (19)
  • 1990-1994  (23)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2691-2695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measurement of carrier concentration and mobility of metalorganic chemical vapor deposited GaN thin films on the sapphire substrate by an infrared reflection technique. By fitting with the experimental data we obtain all the parameters of the lattice vibration oscillators and of the plasmon. From the plasmon frequency and the damping constant we have derived the carrier concentration and the electron mobility. The concentration agrees with the Hall data very well while the mobility values are smaller than that of the Hall measurement by a factor of about 0.5. We attribute such mobility lowering to the increase of scattering for the electrons coupling with the incident photons. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 3139-3139 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ya. I. Kolesnichenko and his cowerkers observed that the alpha particle energy losses due to Alfvén wave excitation in an ignited plasma did not exceed 25% of the total alpha particle energy. (AIP)
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 58 (1992), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Previous results from our laboratory suggest that long-term treatment of primary cultured bovine adrenal medullary (BAM) chromaffin cells with nicotine or phorbol 12-myristate 13-acetate, either of which directly activates protein kinase C (PKC), increases the mRNA levels encoding catecholamine-synthesizing enzymes and proenkephalin. In the present study, we have examined the effects of nicotine on BAM cell PKC activity with special emphasis on long-term effects. Nicotine increased particulate PKC activity in a concentration-dependent manner when measured using in vitro enzyme assay with histone as the substrate. This effect is mediated through nicotinic cholinergic receptors, because 1,1-dimethylphenylpiperazinium, a nicotinic agonist, had a similar effect. In addition, chlorisondamine, a specific nicotine-receptor blocking drug, antagonized the effect of nicotine. Nicotine also increased specific [3H]phorbol 12,13-dibutyrate ([3H]PdBu) binding within 1 min, the effect of which was maximal between 3 and 12 min. This effect was reversed by chlorisondamine similarly after 12 min and after 18 h of nicotine treatment, indicating that continual nicotinic-receptor occupancy is required for persistent PKC activation. Compared to PKC activation, the onset of nicotine-stimulated diacylglycerol production was slow, and it was observed after 12 min of incubation with nicotine. The diacylglycerol levels, specific [3H]PdBu binding, and PKC activity remained significantly elevated for at least 18 h with continuous nicotine incubation. Furthermore, nicotine increased the PKC immunoreactivity of a particulate protein with a molecular mass of 82 kDa in the western blot. These results suggest that nicotinic-receptor activation increases PKC activity and immunoreactivity in BAM cells. The long-term PKC activation may serve several functions, such as activation of mRNA production and a negative feedback regulation of either nicotinic receptors or voltage-dependent Ca2+ channels.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 125-128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural changes on and near surfaces of ZnTe crystals were observed by the surface profile imaging method in a high-resolution transmission electron microscope (HRTEM) with 200 kV accelerating voltage. It was found that ZnO particles form under electron irradiation on surfaces originally covered with a thin amorphous layer. For amorphous coverages thicker than about 7 nm, ZnO particles were not observed. Under the ZnO particles, 2×1 and 2×2 superstructures (about 10 nm in size) were often found in the ZnTe matrix. These superstructures can be described as a metastable Zn2Te3 having a structure similar to the ordered Ga2Te3 structure. This change can be accomplished by considering the diffusion of zinc from the ZnTe matrix to the surface to form the oxide and evaporation of tellurium out of the surface, leaving behind a matrix with an altered stoichiometry. The HRTEM computer-simulated images for the proposed Zn2Te3 superstructure matched very well the experimental images. The 2×1 and 2×2 superstructures corresponded to the HRTEM images of the new Zn2Te3 structure viewed along its [211] and [100] directions, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3347-3350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of nitrogen and the formation of nitrogen-oxygen donors in nitrogen-doped Czochralski-silicon crystals (Cz-Si) were studied by the electrical and infrared-absorption measurements in samples annealed in different conditions. Experiments showed that nitrogen-oxygen shallow donors are formed during the nitrogen-doped Cz-Si crystal growth. Nitrogen-oxygen thermal donors are generated in temperature range of 300–550 °C, and the behavior of these thermal donors resembles that of the thermal donors in Cz-Si crystals [P. Wagner, C. Holm, and E. Stirtl, Festkoperprobleme 24, 191 (1984)], but they are monovalent donors with the same levels as those of neutral thermal donors; no new electrically active center is generated in the temperature range of 600–900 °C.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2286-2288 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a high Tc superconducting grain boundary Josephson junction, harmonic mixing experiments in the mm waveband were carried out, aiming at as large a harmonic number and as high a signal frequency as possible. The dependencies of intermediate frequency output on dc bias, harmonic number, frequency of local oscillator (LO), and other parameters were carefully studied. Until now, our best result was the mixing between the signal at 95 GHz and the 105th harmonic of LO at about 900 MHz. Preliminary experiments using a high Tc harmonic mixer and phase-locking loop were tried to stabilize the frequency of a mm wave source.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3272-3274 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vibrational modes in Hg1−xCdxTe epitaxial films and HgTe/CdTe superlattices have been investigated by means of far-infrared (FIR) transmittance spectra at temperatures from 4.2 to 300 K. The observations were put forward in the spectral range from 20 to 350 cm−1, emphasizing the wave-number region at the low-frequency side of the reststrahlen absorption band. A series of single-phonon and two-phonon modes as well as impurities- and defects-induced vibrational modes are observed. FIR transmission seems to be a good probe for characterization of the perfection of Hg1−xCdxTe films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1945-1946 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 308-310 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that phase transformation can occur in cobalt when subjected to ball milling. The two modifications of cobalt, i.e., face-center-cubic (fcc) and hexagonal close-packed (hcp) phases, which usually coexist at room temperature and are often difficult to be separated from each other, can now be easily separated by using the simple ball milling technique. The phase formation of cobalt was found to depend on the mill intensity. Under different mill intensity or different milling time, the phase transformations follow the routes of hcp+fcc→hcp, hcp+fcc→hcp→fcc+hcp, and hcp+fcc→hcp→fcc+hcp→fcc, respectively. Our results indicate that the phase formation of cobalt induced by ball milling was determined by the accumulation of structure defects. Different mill intensity may adjust the rate and level of the accumulation of defects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2260-2262 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution photothermal ionization spectroscopy has been performed on silicon grown in a nitrogen environment by the Czochralski technique for the first time. Three shallow donors related to the complexes of nitrogen and oxygen impurities D(N-O-3), D(N-O-4), and D(N-O-5) have been observed. Previously unresolved transitions related to the excited states higher than 3p± for D(N-O)s are observed in the spectra as well. The ionization energies of D(N-O)s have been accurately determined as 36.16, 36.41, and 37.37 meV, respectively. In addition, two previously unidentified donor levels found in the absorption spectra of silicon crystal involving nitrogen and oxygen are identified as originating from the splitting of the ground state of phosphorus.
    Type of Medium: Electronic Resource
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