ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
From a viewpoint of device application using p-channel SiC MOSFETs, control of theirchannel properties is of great importance. We aimed to control the electrical properties of 4H-SiCp-channel MOSFETs through locating the p-type epitaxial layer at the channel area, so called“epi-channel MOSFET” structure. We varied the dopant concentrations and the thickness of theepi-channel layer, and investigated their electrical properties. In case of heavily doped epi-channelsamples, the devices indicated “normally-on” characteristics, and their channel mobility decreasedslightly in comparison with the inversion-type devices. As for lightly doped epi-channel samples, thesubthreshold current increased with thickness of the epi-channel layer keeping their “normally-off”characteristics. Their channel mobility also increased with thickness of the epi-channel layer. Thepeak value of field effect channel mobility of the sample with 2.5 μm thickness and 5×1015 /cm3dopant concentration epi-channel was 18.1 cm2/Vs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.711.pdf
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