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  • 2000-2004  (7)
  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6409-6415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of C54 TiSi2 using Ti–Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Alloys with Nb contents ranging from 0 to 13.6 at. % were used. The formation temperature of C54 TiSi2 was reduced in the presence of Nb. However, the addition of Nb in Ti did not cause fundamental changes in the evolution of resistance versus temperature. This latter observation suggests that the mechanism for the formation of C54 TiSi2 remained the same in spite of the enhancement effect. For alloys with up to 8 at. % of Nb, the C49 TiSi2 phase formed first, as with pure Ti. When annealing the alloy with 13.6 at. % Nb, neither C49 TiSi2 nor C54 were found in the usual temperature ranges, instead, C40 (Nb,Ti)Si2 was observed. This phase transformed to C54 (Nb,Ti)Si2 above 950 °C. The apparent activation energy associated with the formation of C54 TiSi2 was obtained by annealing the samples at four different ramp rates from 3 to 27 K/s; it decreased continuously from 3.8 to 2.5 eV with increasing Nb content from 0 to 8 at. %. The apparent activation energy for the formation of C40 (Nb,Ti)Si2 was found to be 2.6 eV. The possible physical meaning, or lack thereof, of the high activation energies derived from experimental measurements is extensively discussed. A qualitative model is proposed whereby nucleation would be rate controlling in pure TiSi2, and interface motion in samples with 8 at. % Nb. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4562-4567 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a Raman study of nanocrystalline GaN with the wurtzite structure synthesized by arc plasma method. Resonant Raman scattering is observed using 514.5 nm (2.41 eV) laser excitation, which is near the band gap of the "yellow band" (2.2–2.3 eV). Under such near-resonant excitation, new Raman bands unexpected in an ideal wurtzite GaN crystal were found. The transverse optical modes of A1 (531 cm−1) and E1 (560 cm−1), and the nonpolar modes of E2 [567 cm−1 (high) and 143 cm−1 (low)] normally observed in bulk crystals, were recorded and were observed to be resonantly enhanced. Two new bands (680 and 344 cm−1) were assigned to the inactive optical phonon modes B1 (high) and B1 (low), respectively. A broadband centered at 710 cm−1 was attributed to surface modes of the nanocrystals, providing good agreement with the calculated result based on Fröhlich theory. As a result of this study, Raman scattering of GaN nanocrystals has been characterized. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1641-1646 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Backscattering and diffraction results are presented for the effects of an interfacial or a surface Mo layer on the formation of Ti-silicides during solid-state interaction between Ti films and Si substrates. It is shown that the interfacial and surface Mo are fundamentally different in their involvement in the Ti-silicide formation. The interfacial Mo induces the formation of C40 (Mo,Ti)Si2 at the interface adjacent to the Si substrate already after annealing at 550 °C, in agreement with our previous results. Hence, the desired C54 TiSi2 can grow directly on top of the C40 (Mo,Ti)Si2 at relatively low temperatures as a result of the template effect. The surface Mo is, however, found in a metal-rich silicide presumably (Mo,Ti)5Si3 at 550–600 °C, which eventually converts to (Mo,Ti)Si2 upon annealing at higher temperatures. Underneath this metal-rich silicide lies a fully developed C49 TiSi2 layer. Consequently, the formation of C54 TiSi2 in the presence of surface Mo follows the usual path of the C49–C54 phase transition. This important difference in the participation of Mo in the silicide formation spreads doubts about the validity of using interfacial Mo versus surface Mo to study the dominant mechanism(s) responsible for the enhanced formation of C54 TiSi2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 599-601 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report microscopic photoluminescence images and corresponding spectra of epitaxial GaAs on Si substrates, prepared by molecular beam epitaxy. High magnification (3000×) images directly reveal dislocations present in the epilayer. Several substrate orientations are investigated including nominal (001) tilted 4° toward 〈110〉. The GaAs samples include structures grown with and without superlattice buffer layers. Some samples were annealed at several temperatures from 650 to 850 °C. The dislocation density versus depth is studied by varying the optical probe wavelength and by studying samples that had been beveled and etched. In addition, the images and spectra are studied over a wide temperature range.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6403-6407 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a violation of the normal Raman selection rule in the resonant Raman spectra of interface (IF) phonon modes of the ultrathin (GaAs)4/(AlAs)2 superlattice. Contrary to the prediction of conventional theories, all four IF modes were observed in both (XX) and (XY) geometries. The result can be interpreted as a consequence of the deep penetration of the electron wave function in the GaAs wells into the AlAs barriers and a lack of definite parity of the electron wave function. Furthermore, our result indicates that conventional theory for bulk (thicker) systems may need to be modified and further developed to be applicable to ultrathin systems. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonselective epitaxial growth process for heterojunction bipolar transistors has been studied. The difference in growth rates for epitaxial and polycrystalline films could be used to monitor the thickness of the intrinsic and extrinsic base layers. The films were grown using chemical vapor deposition on Si 〈100〉 (epitaxy) and on silicon dioxide (polycrystalline) at reduced pressure (20–80 Torr) for undoped and in situ B or As doping. The depositions were carried out using silane diluted in hydrogen. Diborane and arsine were used as the source gas for dopants. For the undoped Si films, the deposition of polycrystalline films had a substantially higher rate than that of epitaxial ones. The growth rate of both epitaxial and polycrystalline depositions decreased with increasing total pressure. It was, however, linearly proportional to the silane partial pressure, pSiH4. The dependence of the growth rate on the hydrogen partial pressure was proportional to pH2−0.82 for epitaxial and to pH2−0.60 for polycrystalline depositions. The apparent activation energy was 2.1 and 1.6 eV for the epitaxial and polycrystalline depositions, respectively. A growth mechanism assuming the dissociative adsorption of silane on the Si surface, in combination with first-order hydrogen desorption kinetics, was employed to describe the experimental observations, including the differences in deposition rates, dependency on the hydrogen partial pressure as well as apparent activation energy. In situ B doping influenced neither the epitaxial nor polycrystalline depositions. In situ As doping, on the other hand, largely reduced the growth rate compared to the undoped films to such an extent that there was no appreciable difference in growth rate between the epitaxial and polycrystalline Si. The doping concentration in the epitaxial B and As films were of the order of 1018 cm−3, identical deposition conditions yielded a 5 and 20 times larger dopant incorporation in the B and As doped polycrystalline films, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1831-1833 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results are presented for the formation of TiSi2 in the presence of an ultrathin Mo layer deposited either at the interface between Ti and Si or on top of Ti/Si. The formation of C54 TiSi2 is clearly shown to be enhanced with a surface Mo layer, although the effect is less pronounced as compared to the use of an interposed Mo layer. The results can be accounted for with a template mechanism where the formation of C40 (Mo, Ti)Si2 is crucial for the epitaxial growth of C54 TiSi2 atop. Possible grain-size effects on the formation of C54 TiSi2 are also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2053-2055 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of single-wall carbon nanotubes (SWCNTs) were measured at different temperatures by varying the incident laser power. The elevated temperature of the SWCNTs and multiwall carbon nanotubes (MWCNTs) is confirmed to be due to the presence of impurities, defects, and disorder. The temperature coefficient of the frequency of the C–C stretching mode E2g (GM) and that of the radial breathing mode in the SWCNT were determined to be ∼−0.038 and ∼−0.013 cm−1/K, respectively. It is found that the temperature coefficient of the GM in the SWCNT is larger than that of the MWCNT, highly oriented pyrolytic graphite, and the graphite. This is attributed to the structural characteristic of the SWCNT—a single tubular carbon sheet with smaller diameter. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1573-0867
    Keywords: Ammonia loss ; denitrification ; nitrogen balance ; algal growth ; transfer processes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Losses of nitrogen were investigated after applications of ammonium bicarbonate and urea to flooded rice at transplanting. Ammonia (NH3) volatilization was determined by direct micrometeorological methods, and total loss of fertilizer nitrogen (N) was measured by15N balance. All the loss appeared to be in gaseous forms, since there was no evidence of leaching and runoff was prevented. The difference between N loss and NH3 loss was thus assumed to be denitrification loss. Both NH3 volatilization and denitrification losses were large, being 39% and 33%, respectively, of the ammonium bicarbonate N, and 30% and 33%, respectively, of the urea N applied by farmers' methods. Ammonia fluxes from the field fertilized with ammonium bicarbonate were very high for two days, and then declined rapidly as the NH3 source in the floodwater diminished. Moderate fluxes from the field fertilized with urea continued over 6 days, but calculations showed that NH3 transfer from floodwater to atmosphere was retarded during the middle period of the experiment, particularly on day 2 when a thick algal scum appeared on the water surface. The results indicate that this algal mass obstructed the transport of NH3 across the water-air interface until the scum was dispersed by wind action. Nevertheless, the prolonged NH3 losses on the urea treatment were due primarily to high floodwater pH values promoted by the strong algal growth during the daylight hours. Nitrogen-15 balance studies showed that incorporation of fertilizer into drained soil substantially increased recoveries of fertilizer N in rice plants and soil compared with incorporation of fertilizer in the presence of standing floodwater. Ammonia loss measurements on these treatments when urea was applied suggested that the improvement in fertilizer N efficiency was due mainly to reductions in NH3 loss.
    Type of Medium: Electronic Resource
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