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  • 2000-2004  (29)
  • 1990-1994  (50)
  • 1980-1984  (66)
  • 1880-1889  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6466-6475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hafnium oxides and hafnium silicate films were investigated as a possible replacement for the SiO2 gate dielectric. Hafnium oxide films were formed by reactive sputtering from a single Hf oxide target in a predominantly Ar atmosphere containing small additions of oxygen. Hafnium silicates were made by adding a He-diluted silane gas for Si incorporation. By changing the silane gas flow, different Si atomic concentrations were incorporated into the Hf oxide films. Depositions were performed with the substrate held at temperatures of 22 °C and 500 °C. The chemical composition of the films was determined with nuclear techniques. Optical reflectivity was used to measure the optical band gap. The film morphology was investigated by transmission electron microscopy (TEM) and the electrical properties were measured with capacitance–voltage and current–voltage measurements using aluminum gate capacitors. TEM and electrical measurement showed that a SiO2 interfacial layer of about 3 nm formed at the Si interface due to the oxidizing sputter ambient. This precluded the growth of Hf based high-K films with small equivalent thickness. After correction for the interfacial oxide layer, the dielectric constant was found to decrease from about 21 for Hf oxide to about 4–5 for the Hafnium silicates with low Hf content (3 at. % Hf and 32 at. % Si). The optical band gap was found to increase from 5.8 eV for Hf oxide to about 7 eV for the silicate films. After annealing at 1000 °C followed by a 300 °C postmetallization anneal, negligible flat band voltage shift were measured on hafnium silicate films and good interface passivation was observed. However, leakage currents increased due to the high temperature processing. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417991
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  • 2
    Electronic Resource
    Electronic Resource
    Coherent magnetization reversal of nanoparticles with crystal and shape anisotropy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 507-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss coherent magnetization reversal in single-domain particles with cubic or uniaxial crystal anisotropy and present the derivation and simulation of the nucleation field in the important case of particles with shape anisotropy and a random orientation of a cubic crystal anisotropy axis. We analyze the interplay of shape and crystal anisotropy as a function of crystal orientation with respect to the applied field. In addition, we present simulations for particles with uniaxial crystal anisotropy and derive the values for remanence and coercive field of an ensemble of particles from calculated hysteresis loops in each case. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323519
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  • 3
    Electronic Resource
    Electronic Resource
    Self-diffusion studies of 15N in amorphous Si3BC4.3N2 ceramics with ion implantation and secondary ion mass spectrometry (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1827-1830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen self-diffusion studies in amorphous precursor-derived Si3BC4.3N2 ceramics were carried out, using ion implanted stable 15N isotopes as tracers and secondary ion mass spectrometry for depth profiling. The analysis of the diffusion profiles in the range of 1500–1700 °C did not show the typical Gaussian broadening of the implantation profiles. Instead, we observed the occurrence of a high concentration region where the width of the implantation profile is nearly unchanged due to implantation damage, and a low concentration region where diffusion occurs. The experimentally determined diffusivities obey an Arrhenius behavior with an activation enthalpy of about H=7 eV and a pre-exponential factor D0 in the order of 5 m2/s which indicates a diffusion mechanism via vacancy-like defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305903
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  • 4
    Electronic Resource
    Electronic Resource
    Zinc diffusion in InP using diethylzinc and phosphine (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3234-3237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low pressure open tube system with diethylzinc (DEZn) and phosphine (PH3) as precursors was used to study the Zn-diffusion in InP. This system offers a flexible and precise control of the diffusion parameters. We investigated the effect of the DEZn and PH3 partial pressures and of the diffusion temperature and time on the hole and Zn concentration profiles. Annealing the samples leads to an increased hole concentration due to out-diffusion of interstitial Zn donors. The Zn and hole concentration profiles were obtained by secondary-ion mass spectroscopy and C–V etch profiling showing maximum hole concentrations between 1017 cm−3 and 4×1018 cm−3 for diffusion depths from 0.3 to 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350969
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of Ion-Conducting Ormolytes: Structure-Property Relationships (1994)
    s.l. : American Chemical Society
    Chemistry of materials 6 (1994), S. 127-134 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00038a007
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  • 6
    Electronic Resource
    Electronic Resource
    New vacuum solutions of conformal Weyl gravity (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 3007-3015 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The Bach equation, i.e., the vacuum field equation following from the Lagrangian L=CijklCijkl, will be completely solved for the case that the metric is conformally related to the Cartesian product of two two-spaces; this covers the spherically and the plane symmetric space–times as special subcases. Contrary to other approaches, we make a covariant 2+2-decomposition of the field equation, and so we are able to apply results from two-dimensional gravity. Finally, some cosmological solutions will be presented and discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.533287
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  • 7
    Electronic Resource
    Electronic Resource
    Reactions of ground-state and electronically excited sodium atoms with methyl bromide and molecular chlorine (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 3005-3011 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100161a013
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  • 8
    Electronic Resource
    Electronic Resource
    All-optical wavelength converter and switch based on electromagnetically induced transparency (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3173-3175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a method for all-optical switching and wavelength conversion using electromagnetically induced transparency (EIT). We discuss the mechanism for the transfer of information in this scheme and determine the conditions for which N×N wavelength conversion can be realized. We compare the properties and limits of an EIT-based switch to conventional wavelength converters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126620
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3Ox thin films on sapphire using a Y-stabilized ZrO2 buffer layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 222-224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial, c-oriented YBa2Cu3Ox thin films were deposited by dc sputtering on (11¯02)-sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO2 (YSZ), which was grown by rf magnetron sputtering. The epitaxy of the YSZ and the YBa2Cu3Ox films was proved by Rutherford backscattering spectrometry combined with ion channeling. The YBa2Cu3Ox films exhibited transition temperatures of 90 K and had critical current densities exceeding 1.2×106 A/cm2 at 77 K in zero magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105972
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  • 10
    Electronic Resource
    Electronic Resource
    Congenital adrenal hyperplasia and acne in male patients (2003)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 148 (2003), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Seborrhoea is one pathogenic factor for acne. Androgens induce sebum production, and excess androgen may provoke or aggravate acne. In women an androgen disorder is frequently suspected when acne is accompanied by hirsutism or menstrual irregularities. In men acne may be the only symptom of androgen excess. We report three male acne patients in whom hormonal screening revealed irregularities of androgen metabolism suggestive of late-onset congenital adrenal hyperplasia and who benefitted from low-dose glucocorticoids. Disorders of androgen metabolism may influence acne not only in women, but also in men, and these patients may benefit from low-dose glucocorticoid therapy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2003.05369.x
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