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  • 11
    Electronic Resource
    Electronic Resource
    Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1292-1294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103462
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  • 12
    Electronic Resource
    Electronic Resource
    Measurement of the two-photon absorption coefficient in a GaAs/AlGaAs quantum well laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 212-214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-photon absorption (TPA) coefficient has been measured for a single-mode GaAs/AlGaAs quantum well laser at 0.86 μm, near the lasing wavelength of 0.83 μm. Picosecond laser pulses were employed to resolve the ultrafast TPA from long-lived carrier-dependent effects. The TPA coefficient was found to be 31±6 cm GW−1, which corresponds to a value of (5.7±1.2)×10−11 esu for the imaginary part of the third-order nonlinear susceptibility. At wavelengths near the quantum well exciton, no strong resonance enhancement of the two-photon transition was observed, and the coefficient appears to be characteristic of the AlGaAs cladding layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103741
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  • 13
    Electronic Resource
    Electronic Resource
    3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2251-2253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112779
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  • 14
    Electronic Resource
    Electronic Resource
    InAs1−xSbx/In1−yGayAs multiple-quantum-well heterostructure design for improved 4–5 μm lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3219-3221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new strained-layer multiple-quantum-well (MQW) heterostructure comprising InAs1−xSbx wells and In1−yGayAs barrier layers is proposed for improved 4–5 μm lasers. Both well and barrier compositions are close to InAs and are potentially well suited for high-quality crystal growth of MQWs on either InAs or GaSb substrates. Simple modeling shows favorable valence-band alignment suitable for carrier confinement, free of the staggered band alignment problem generally found in the conventional designs. Perturbation calculation of the effect of the compressive strain in the wells also shows sufficient valence subband separation. This and the reduced hole mass are expected to considerably lower the threshold carrier density and Auger recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111341
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  • 15
    Electronic Resource
    Electronic Resource
    Studies of carrier heating in InGaAs/AlGaAs strained-layer quantum well diode lasers using a multiple wavelength pump probe technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 747-749 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier heating processes in InGaAs/AlGaAs strained-layer single-quantum well devices are studied by using a new femtosecond multiple-wavelength pump probe technique. Contributions from free-carrier absorption and stimulated transitions have been separated by using different combinations of pump and probe wavelengths above and below the band gap. Different cooling times were measured which reflect different thermalization mechanisms. Results show that free-carrier absorption is not always the dominant carrier heating process in III-V quantum well devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108594
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  • 16
    Electronic Resource
    Electronic Resource
    Single-frequency GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 μm (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3271-3272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ridge-waveguide lasers emitting at ∼2.1 μm have been fabricated from a GaInAsSb/AlGaAsSb quantum-well heterostructure grown on a GaSb substrate by molecular beam epitaxy. The cw threshold current is as low as 29 mA at room temperature, and the maximum cw output power is 28 mW. The lasers operate in a single longitudinal mode which can be continuously tuned without mode hopping over 1.2 nm by changing the heatsink temperature and over 0.8 nm by changing the current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110171
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  • 17
    Electronic Resource
    Electronic Resource
    High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1154-1156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first GaInAsSb/AlGaAsSb diode lasers with a quantum-well active region have been demonstrated. These devices, which were grown by molecular beam epitaxy, emit at ∼2.1 μm. For room-temperature pulsed operation of lasers 100 μm wide, threshold current density as low as 260 A/cm2 and differential quantum efficiency up to 70% have been obtained for cavity lengths of 2000 and 300 μm, respectively. One device 100 μm wide and 1000 μm long has operated pulsed at heatsink temperatures up to 150 °C, with a characteristic temperature of 113 K between 20 and 40 °C. For another device of the same dimensions, cw output power up to 190 mW/facet has been achieved at a heatsink temperature of 20 °C. These characteristics represent a dramatic improvement in performance over double-heterostructure GaInAsSb/AlGaAsSb diode lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107630
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  • 18
    Electronic Resource
    Electronic Resource
    GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2634-2635 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained InGaAs/AlGaAs quantum well diode lasers have been fabricated on Si substrates for the first time. A GaAs buffer layer was grown on each Si wafer by temperature-cycled organometallic vapor phase epitaxy (OMVPE). The wafer was then transferred to a second reactor for OMVPE growth of a graded-index separate-confinement heterostructure single-quantum well laser structure. For lasers with a cavity length of 1000 μm, room-temperature pulsed threshold current densities as low as 174 and 195 A/cm2 have been obtained for active layer compositions of In0.02Ga0.98As and In0.05Ga0.95As, respectively. One laser with an In0.05Ga0.95As active layer operated cw for 56.5 h, a record lifetime for GaAs-based diode lasers on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105921
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  • 19
    Electronic Resource
    Electronic Resource
    InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 833-835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111029
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  • 20
    Electronic Resource
    Electronic Resource
    High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 152-154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode-array-pumped GaInAsSb/GaSb and InAsSb/GaSb double heterostructure lasers operated at 85 K yielded 95 mW average and 1.5 W peak power per facet at 3 μm, and 50 mW average and 0.8 W peak power facet at 4 μm. The highest operational temperature was 210 K for the 3-μm quaternary and 150 K for the 4-μm ternary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111548
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