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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2415-2417 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified a resist material that is suitable for high-speed, nanometer-scale scanning probe lithography (SPL) using the atomic force microscope (AFM). The material is siloxene, commonly known as spin on glass (SOG). The SOG film is deposited on a silicon sample and exposed with a voltage applied between the AFM tip (negative) and the silicon substrate (positive). Voltages of 70 V and currents of 1 nA are typical. It is a positive resist where the etch selectivity between the exposed and unexposed areas is greater than 20. We have recorded line widths as narrow as 40 nm. The writing speed is greater than 1 mm/s, which we believe to be an important attribute in future systems for SPL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1617-4623
    Keywords: Key words Rat ; DNA topoisomerase IIα ; Saccharomyces cerevisiae ; top2ts ; Complementation ; Leucine zipper
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A series of yeast expression plasmids which comprise segments of the cDNA sequences encoding rat topo IIα have been constructed. The transcription of these constructs is under the control of the yeast GAL1 promoter. Galactose-dependent expression of the cloned rat topo IIα cDNA complemented a yeast top2 ts mutation, as well as a deletion mutation at the yeast TOP2 locus. Truncation of 12 N-terminal amino acids and/or 158 C-terminal amino acids of rat topo IIα had no effect on its ability functionally to substitute for top2 ts . Moreover, a cDNA construct with mutated putative leucine zipper domain (amino acids 993–1013) retained the complementation activity. These observations suggest that transformants capable of conditional topo IIα expression can be exploited as a useful model system for studies on the structure-function relationships of wild-type and mutated topo IIα, as well as the interplay of potential antitumor drugs with the enzyme.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2945-2952 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high accuracy measurements of gain, loss, and transparency energy in long-wavelength semiconductors based on a hybrid approach using the fundamental relationship between the gain and the spontaneous emission spectra. Independent measurements of optical gain, transparency energy, and loss show the accuracy and validity of this technique. These results are compared with those obtained by the non-Markovian gain model with many-body effects under the spontaneous emission transformation method. It is found that the hybrid approach for the gain spectrum alleviates many of the problems related to the poor signal to noise ratio in the amplified-spontaneous emission near and below the band edge. The theoretical spectra compare well with the measured spectra for both the transverse electric and transverse magnetic polarizations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Beamline BL-NE1B has been constructed at the 6.5-GeV TRISTAN accumulation ring (AR) for applications of circular polarization in the soft x-ray region. Circularly polarized soft x rays are produced by a helical undulator operation mode of an insertion device, EMPW#NE1. The fundamental harmonic peak can be tuned from 0.25 to 2 keV. The NE1B beamline is equipped with a vertical-dispersion spherical-grating monochromator using the Rowland mounting. A monochromatized circularly polarized photon flux higher than ∼1011 photons/s has been obtained over an energy range from 0.25 to 1.25 keV with an energy resolution (E/ΔE) of around 1500–300. An energy resolution of about 5000 has been achieved at 400 eV with slit widths of 10 and 10 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Suite 500, 5th Floor, 238 Main Street, Cambridge, Massachusetts 02142, USA : Blackwell Science Inc.
    International journal of gynecological cancer 5 (1995), S. 0 
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: CD44 is a cell-surface molecule that has been shown to have several splicing isoforms. In various human tumors, such as primary colon and breast tumors, and their metastases, alterations of CD44 isoform expression have been reported. The present study was performed to investigate CD44 alternative transcript splicing in gynecologic malignancies. We performed reverse transcriptase polymerase chain reaction (RT-PCR) analysis of CD44 splice variant expression on mRNA transcripts from ovarian carcinomas (six primary and 15 metastatic tumors) from 21 patients and from cervical carcinomas (25 primary and two metastatic tumors) from 25 patients. We also performed this analysis on five different ovarian carcinoma cell lines established from ascitic fluid and primary tumors, and two cervical carcinoma cell lines. We included eight normal female genital tissue specimens and one additional placenta specimen in our RT-PCR analysis for comparison with CD44 expression of carcinomas. The CD44H isoform was amplified in all of the specimens. None of eight normal tissue specimens, including myometrium and ovary, expressed CD44R1 transcripts. But the CD44R1 transcript was expressed in 2/6 (33.3%) primary ovarian carcinomas and in 7/15 (46.6%) metastatic ovarian carcinomas. In cervical carcinoma, 13/25 (52.0%) primary tumors and 2/2 (100.0%) metastatic tumors expressed CD44R1. The CD44R1 transcript was expressed increasingly during ovarian and cervical tumor progression (P = 0.026 and P = 0.002, respectively). In conclusion, the frequency of CD44R1 transcript expression increased during ovarian and cervical carcinoma progression, and analysis of CD44 splice variants may be useful in detecting primary and metastatic gynecologic malignancies.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5879-5879 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization-vector measurements were made at various temperatures on polycrystalline disks of YBa2Cu3O7 and (Ba,K)BiO3 as each was rotated about its axis in a fixed field H along the disk plane. For hysteretic starting states, the vortex flux density vector B is found to bifurcate into a BR component that rotates rigidly with the sample and a BF component that stays at a fixed angle (θF) relative to H, thus turning frictionally relative to the sample, as seen earlier. With increasing H, BR decreases and BF increases in size, indicating a distribution in the strength of the vortex pinning torques. After BR has vanished, the frictional angle θF decreases rapidly. Thus, the quantity Hμ sin θF (μ being the quantized vortex moment), which equals the average pinning torque (τp) on each vortex, does not remain constant but diminishes with increasing H. This decrease of τp is consistent with the collective pinning phenomenon known as vortex bundling. At fixed H, τp diminishes rapidly with increasing temperature, reaching very low values well below Tc. These results are compared with those derived from critical-state model interpretations of conventional hysteresis loop data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 801-810 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed-growth (EFG) Si is investigated using deep-level transient spectroscopy and surface photovoltage. An impurity energy level of CrB was found at 0.27 eV above the valence band in EFG Si contaminated with Cr. The Cr diffusion coefficient in EFG Si was obtained as 2×10−17 cm2/s at room temperature using association and dissociation of CrB pairs after a 210 °C dissociation anneal. Most of the deep-level transient spectroscopy (DLTS) spectra are not analyzable with conventional methods due to abnormally broad peaks. DLTS spectra of as-grown EFG Si are modeled using a Gaussian distribution of impurity energy states. The simulated DLTS peaks agree well with measured data explaining the origin of the deep-level impurities of EFG Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 983-987 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is proposed that the nucleation and growth of the amorphous phase through the solid-state amorphizing reaction in thin-film diffusion couples can be predicted by using the concept of effective driving force. The effective driving force consists of two factors: (i) the thermodynamic driving force given by maximum free-energy difference between the physical mixture of binary elements and the amorphous phase (ΔGmax), and (ii) the kinetic factor given by a ratio of the effective radius of the interstitial site in the host matrix to the atomic radius of the diffusing species (Rm/d). From the comparison of reported experimental results, it is shown that the criterion of effective driving force holds well for predicting the nucleation of the amorphous phase in metal/silicon systems as well as that of metal/metal systems. In addition, the concept of effective driving force holds well for predicting the growth tendency of the amorphous phase in metal/silicon systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5993-5999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of the Si0.5Ge0.5 alloy layer on Si (100) substrate during ion-beam-assisted deposition (IBAD) have been investigated by atomic force microscopy, reflection high-energy electron diffraction, transmission electron microscopy, and double-crystal rocking diffraction. We confirmed that Si0.5Ge0.5 nucleates on Si (100) via the Stranski–Krastanov (SK) mechanism by IBAD, and Ar-ion bombardment suppressed SK growth mode as well as improved crystalline perfection. The epitaxial temperature was observed at 200 °C, and it was much lower than the growth temperature (550–600 °C) in molecular-beam epitaxy (MBE). The χmin value (the ratio of channeling to random backscattering yields) was 10.5% lower than the obtained MBE value. The effect of ion bombardment on nucleation was explained as the result of ion-bombardment-induced dissociation of three-dimensional islands and enhanced surface diffusion, and appeared only at low deposition temperatures where the dissociation of three-dimensional islands is more favorable than the formation of those islands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Fabry–Perot resonance technique using a single cavity was proposed to obtain the propagation loss of the optical waveguide. The propagation loss as well as the facet reflectance were measured without sequential cleavage for a GaAs/AlGaAs strip-loaded waveguide based on the contrast ratios of the reflected and transmitted interference patterns. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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