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  • 1
    Electronic Resource
    Electronic Resource
    Observation of bolus position with standardized test foods and fluoroscopic technique (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of oral rehabilitation 23 (1996), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: SUMMARY Sugar and agar balls containing barium were made for the fluoroscopic observation of the bolus position during habitual side chewing in 13 adult males (aged from 20 to 28 years) who had a complete dentition and healthy masticatory system. The test foods had constant size, shape, weight and known hardness, i.e. type 1, 20 kg; type 2, 40 kg; type 3, 1.0 kg and type 4, 0.5 kg. These four types of test foods were chewed randomly in a fluoroscopic room. The jaw separation distance and the bolus position during first bite and crushing bite were observed. The influence of the chewing order of four types of test foods on the bolus position was also recorded. It was found that both hard and soft test foods were most often crushed at the first molar area, and the separation distance during the crushing bite was only slightly wider than the diameter of the food. The first bite jaw separation distance for hard food chewing was significantly wider than soft food chewing and the later in the chewing order the wider the separation distance. The effect of chewing order was not significant on the position and jaw separation distance of the crushing bite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2842.1996.tb00899.x
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Dibutyryl Cyclic AMP on the Kinetics of myo-Inositol Transport in Cultured Astrocytes (1999)
    Oxford UK : Blackwell Science Ltd
    Journal of neurochemistry 73 (1999), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Dibutyryl cyclic AMP (dBcAMP) is known to induce maturation and differentiation in astrocytes. As myo-inositol is an important osmoregulator in astrocytes, we examined the effects of maturation and biochemical differentiation on the kinetic properties of myo-inositol transport. Treatment of astrocytes with dBcAMP significantly decreased the Vmax of myo-inositol uptake, but the effect on Km was not significant. The myo-inositol content of astrocytes was significantly decreased in cells treated for 5 days with dBcAMP as compared with untreated controls. Maximum suppression of myo-inositol uptake occurred 7 days after exposure of astrocytes to dBcAMP; this was gradually reversible when dBcAMP was removed from the medium. After exposure to hypertonic medium for 6 h, mRNA expression of the myo-inositol co-transporter was diminished by ∼36% in astrocytes treated with dBcAMP as compared with untreated cells. It appears that myo-inositol transporters in astrocytes treated with dBcAMP are either decreased in number or inactivated during maturation and differentiation, suggesting that the stage of differentiation and biochemical maturation of astrocytes is an important factor in osmoregulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1999.0730105.x
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  • 3
    Electronic Resource
    Electronic Resource
    Free-carrier absorption of Hg1−xCdxTe epitaxial films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7738-7742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-carrier absorption (FCA) of Hg1−xCdxTe epitaxial films is analyzed by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bulk materials. Based on the analyses, the carrier concentration, the density and size distribution of Te precipitates, as well as the inclusion in Hg1−xCdxTe epilayers are derived from fitting the measured FCA spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362342
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  • 4
    Electronic Resource
    Electronic Resource
    The magnetoresistance and microstructure of Fe–xCr–10Co alloy thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8593-8597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large negative magnetoresistance (MR) is observed in Fe–xCr–10Co (x=10,20,30,40,50,- 60,70, and 80 wt %) ternary heterogeneous alloy films prepared by the IBS (ion beam sputter) deposition process. All the as-deposited films consisted of the α phase alone. After aging treatment, the α phase is decomposited into two phases: the α1 (Fe–Co rich phase) and α2 (Cr rich phase). In the granular alloy, the GMR effect is obtained by virtue of the interface scattering between α1 and α2. After isothermal aging at 400 °C for 1 h, the largest MR of −27% appears around the Cr content of 60 wt % at 77 K and 14 kOe. The MR ratio of Fe–50Cr–10Co and Fe–70Cr–10Co is −12% and −20%, respectively, at the same condition. The MR ratio is also obviously effected by the Cr (or Fe) content in the alloy system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362455
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2886-2888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360031
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  • 6
    Electronic Resource
    Electronic Resource
    Thermally stable PdIn ohmic contacts to n-GaAs via exchange mechanism (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 297-300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stable, low-resistance ohmic contacts to GaAs (Si-doped, n=1.6–1.8×1018 cm−3) were formed using PdIn metallization sputter-deposited from an alloy target. Average specific contact resistances (ρc) in the 10−6 Ω cm2 range were reached upon annealing at 600 °C or higher. Contacts annealed under the optimum condition of 850 °C for 15 s exhibited an average ρc of 2.5×10−6 Ω cm2. The 100 h of thermal aging at 400 or 500 °C increased their average ρc to 3.0×10−6 and 1.0×10−5 Ω cm2, respectively. The ohmic behavior of the annealed contacts was ascribed to the exchange of In and Ga atoms between the metallization and the semiconductor and the concomitant formation of InxGa1−xAs, whose presence at the contact interface was confirmed using cross-sectional transmission electron microscopy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363848
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  • 7
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance and phase decomposition of Fe–XCr–Co (WFe/WCo=1) thin film granular alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4523-4527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, the giant magnetoresistance (MR) effect was observed in Fe–XCr–Co (WFe/WCo=1, X=27, 40, 50, 60, 70, and 80 wt %) ternary heterogeneous alloy films. After aging, the separated phases and lattice images of the α1 (Fe–Co rich phase) and α2 (Cr rich phase) were further determined by high resolution transmission electron microscope. Experimental results indicate that the MR variations in Fe–Cr–Co thin films alloys were associated with the heterogeneous microstructure. By isothermal aging at 550 °C for 80 min, the largest MR of −43% appears for the film with the composition of 40(Fe/Co)–60Cr at 77 K under a field of 14 kOe. At the same treatment condition, the MR ratios of 50(Fe/Co)–50Cr and 30(Fe/Co)–70Cr are −13.2% and −21.3%, respectively. Cr content, therefore, significantly affected the MR ratio. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363557
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  • 8
    Electronic Resource
    Electronic Resource
    Phase formation in Ni/InP contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1342-1347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of Ni films with InP is of technological interest because of the importance of Ni in ohmic contacts to n-type InP. However, numerous discrepancies are found in the literature concerning the Ni/InP reaction. In this study, bulk and thick film diffusion couples are examined in light of the Ni–In–P phase diagram, and many of the apparent discrepancies in the literature are clarified. Segregation of In and P into Ni–In and Ni–P binary phases is found to be an intermediate stage of the reaction, which is most easily observed in the reaction of thicker Ni layers with InP substrates. However, the Ni2InP ternary phase is found in the final stage of the reaction of Ni films on InP substrates, as predicted by the phase diagram. This sequence of phase formation differs dramatically from that observed in the other Ni/III–V systems that have been examined, and these differences are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360308
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  • 9
    Electronic Resource
    Electronic Resource
    Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4777-4782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the enhancement of Schottky barriers to n-GaAs has been carried out using the following diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/ n-GaAs, prepared by sputter deposition at a base pressure ∼2×10−7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs. Enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. A regrowth mechanism was used to rationalize the Schottky barrier enhancement. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer then reacts with the Ni-Al layer on top to form the (Al, Ga)As layer under subsequent high temperature annealing. A (200) dark-field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359397
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of InGaAs/InAlAs strained double quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5348-5351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been performed on a In0.82Ga0.18As/In0.52Al0.48As strained double quantum wells with narrow well widths of 38 and 48 A(ring). The band offset ratio Qc in this narrow quantum well structures was found to be 0.70±0.01. Based on a steady-state photoluminescence model, the temperature and laser excitation dependences of the luminescence intensity allow us to conclude that the thermal quenching of luminescence is controlled by the quantum transport of the photogenerated carriers for temperature below 125 K, while the dominant luminescence quenching mechanism above 150 K is a thermally activated detrapping of carriers from the wells into barriers, followed by nonradiative recombination in the barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363474
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