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  • 1995-1999  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    What determines the lateral bonding speed in silicon wafer bonding? (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 863-865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In silicon wafer bonding, the initial contact area spreads laterally with a typical speed on the order of 10 mm/s. We observed that this lateral bonding speed increases with decreasing ambient pressure, and is independent of the distance of the contact front to the rim of the wafers and independent of wafer thickness. From these results, we conclude that the lateral bonding speed is mainly determined by pressing the ambient gas out between the two wafers from a very localized area close to the propagating bonding front. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115530
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3660-3662 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the growth mode and strain state of GaN layers grown either directly on 6H–SiC(0001) or on thin (5 nm), coherently strained AlN nucleation layers. Using a combination of structural, optical, and vibrational characterization methods, we show that the 3.4% compressive lattice mismatch strain is fully relieved in the former case, whereas in the latter case a significant amount (0.3%) remains even after 1 μm of growth. This finding is clarified by in situ reflection high-energy electron diffraction and transmission electron microscopy. We demonstrate that the strain state of the GaN layer is determined by its growth mode, which in turn is governed by the degree of wetting of the underlayer rather than by lattice mismatch. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123214
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Multiple internal reflection spectroscopy of bonded silicon wafers (1995)
    Springer
    Applied physics 61 (1995), S. 101-105 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35; 68.55; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100 °C. Si–H x and SiO–H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without de-ionized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si–H bonds might be involved in the bonding process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050173
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Multiple internal reflection spectroscopy of bonded silicon wafers (1995)
    Springer
    Applied physics 61 (1995), S. 101-105 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100°C. Si−Hx and SiO−H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without defonized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si−H bonds might be involved in the bonding process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538372
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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