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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3630-3634 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron-beam (EB)-induced pattern etching of AlxGa1−xAs (0≤x≤0.7) is described. An ultra-thin GaAs oxide at the surface of a GaAs/AlGaAs heterostructure wafer is used as a resist film. The GaAs oxide resist can be selectively removed by EB irradiation in a Cl2 ambient, which results in pattern etching of GaAs/AlGaAs. The etch rate of AlGaAs is examined as functions of substrate temperature, AlAs mole fraction, and EB flux. The results indicate that pattern etching is realized in the AlAs mole fraction range of 0≤x≤0.7
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2392-2399 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Damage in GaAs induced by Ga+ focused-ion-beam-assisted Cl2 etching is studied by photoluminescence (PL) intensity measurements as functions of ion energy, ion dose, and substrate temperature. By decreasing the ion energy from 10 to 1 keV, the damage depth decrease to 1/5, where damage depth is taken as the thickness at which the PL intensity recovers by wet etching. The damage depth is shallower when the etching yield is larger with the same ion energy. By increasing the ion dose, the normalized PL intensity decreases, but damage depth is nearly constant. Over 1015 ion dose, the normalized PL intensity shows a constant value. By increasing the sample temperature, the damage depth becomes shallower. At 150 °C with ion energy of 1 keV, the damage depth is less than 0.5 μm, which is the detection limit of the PL measurement in GaAs substrate.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6415-6419 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pattern formation on GaAs by Ga+ focused-ion-beam (FIB) irradiation and subsequent Cl2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga+ FIB-assisted Cl2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga+-ion doses.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4297-4303 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The first demonstration of in situ electron-beam (EB) lithography is reported, where a photo-oxidized surface thin layer of GaAs is used for a resist. The in situ EB lithography sequence consists of five processes, i.e., preparation of a clean GaAs surface, photo-oxidation for a resist film formation, direct patterning of the oxide resist by EB-induced Cl2 etching, Cl2 gas etching of GaAs surface for pattern transfer, and thermal treatment in an arsenic ambient for resist removal and surface cleaning. The GaAs wafer is never exposed to air throughout all of the above processes to avoid an unintentional surface contamination. The minimum electron dose required for patterning of the GaAs oxide resist is about 5×1016 cm−2. An overgrown layer on the patterned GaAs surface shows a good surface morphology, which strongly indicates that this technology makes it possible to repeat crystal growth and surface patterning.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 98-100 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This is the demonstration of "in-situ masking'' concept. In situ patterning of GaAs is carried out by using a photo-oxidized surface layer as a mask for subsequent Cl2 etching. Clean GaAs surface provided by molecular beam epitaxy is exposed to pure oxygen and is simultaneously irradiated with an Ar+ ion laser of the 514.5 nm line for photo-oxidation of the surface. Subsequent Cl2 gas etching of the photo-oxidized sample reveals that the GaAs oxide fills the role of an etching mask. The resistance of the oxide mask against Cl2 etching varies depending on the laser fluence with which the oxide of GaAs is formed.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1012-1014 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pattern etching of GaAs at submicron size is carried out by in situ electron beam (EB) lithography using a computer-controlled pattern generator. GaAs oxide on the wafer surface is used as a resist film in EB-induced Cl2 etching. A 0.5 μm linewidth in a 1 μm pitch line-and-space pattern with flat top surface is obtained. Observations of the pattern edge with a scanning electron microscope show that the boundary between the etched area and the oxide mask area is abrupt and that the undulation of the pattern edge is less than about 30 nm.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 365-367 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Buried GaAs/AlGaAs single quantum-well structures have been fabricated for the first time by in situ electron beam (EB) lithography. The process includes the molecular beam epitaxy of a GaAs/AlGaAs single quantum well, electron-beam direct writing, Cl2 gas etching, and overgrowth of an AlGaAs layer. A thin GaAs oxide layer was used as the etching mask, which was selectively formed on a clean GaAs surface by EB irradiation under an O2 ambient. Subsequent Cl2 gas etching resulted in the formation of isolated quantum wells. Prior to the overgrowth, thermal cleaning with atomic hydrogen was employed for removing the oxide mask. The cathodoluminescence image of the buried quantum well demonstrates the high quality of the resultant structure formed by in situ EB lithography.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Pharmacology 32 (1992), S. 377-397 
    ISSN: 0362-1642
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Medizin , Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 9
    ISSN: 1432-0533
    Schlagwort(e): Phytosterolemia ; Intradural xanthomatosis ; Denticulate ligaments ; Macrophage ; Immunohistochemistry
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary Multiple intradural xanthomatous tumors developed in 48-year-old female with familial phytosterolemia. These tumors were restricted to the spinal denticulate ligaments. Histological and immunohistocheimical findings were fundamentally similar to those of tendinous xanthomas. The major cellular component of these tumors were identified as of mono-histiocytic origin because they possessed myeloid histiocytic antigen (Mac 387), CD11c and lysozyme but not CD15. Sitosterols, campesterols and cholestanols were recovered from the extract of the tumors and the lesions were confirmed to be phytosterolemic xanthomas. Schwann cells stained with anti-S100 protein were confined to the perivascular small nerve bundles and did not show xanthomatous change. Although immunohistochemical preparation of epithelial membrane antigen and desmoplakin I+II revealed the presence of non-neoplastic meningothelial cells in the superficial portion of the tumors, they were too few to play a significant role in the development of these xanthomas.
    Materialart: Digitale Medien
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  • 10
    ISSN: 0942-0940
    Schlagwort(e): Subarachnoid haemorrhage ; chronic cerebral vasospasm ; calcium antagonist ; AT877 ; HA 1077
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary The initial dose-escalating clinical trial of a novel calcium antagonist, AT877, in patients with aneurysmal subarachnoid haemorrhage is reported. AT877 is characterized by its strong spasmolytic activity, its inhibition of intracellular calcium ion activity, and the inhibiton of several protein kinases. A total of 113 patients (Hunt and Hess grades I to IV) who had undergone surgery within 3 days of aneurysmal rupture entered the study. Patients were divided into 5 groups according to the total daily dose of AT877: I: 20 mg; II: 40 mg; III: 60 mg; IV: 90 mg; and V: 120–180 mg. AT877 was given by intravenous infusion over 30 min two or three times a day for 14 days after surgery. Although AT877 did not completely abolish angiographic vasospasm, severe vasospasm was seen less frequently in patients given higher doses. Vasospasm was the cause of a poor clinical outcome (Glasgow outcome scale rating 3 or greater) in 19%, 7%, 9%, 8%, and 6% of the patients in groups I to V, respectively. The results indicated a favourable clinical effect of AT877 at doses above 40 mg per day. Only mild hypotension was seen, even when 60 mg of AT877 was infused over 30 min. AT877 appears to be effective in patients with subarachnoid haemorrhage. Part of its effect may be attributable to protection of the brain from ischaemic insults due to chronic cerebral vasospasm. However, the drug still needs to be evaluated in a placebo-controlled double-blind trial (which is currently being carried out).
    Materialart: Digitale Medien
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