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  • 1
    Electronic Resource
    Electronic Resource
    Chemical defect explanation for the effect of postdeposition treatments on CuInSe2 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1624-1627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation and oxygenation of CuInSe2 have been studied by x-ray photoelectron spectroscopy in order to investigate the defect properties. Initially oxidized p-type material was type-converted by low-energy hydrogen ion implantation. A defect model has been proposed suggesting the reactivation of selenium vacancies (VSe) as well as the creation of additional indium copper antisites (InCu). For cleaved samples, a direct influence of hydrogen on the net-donor concentration has been assumed. The resulting Cu-depleted surface is the result of the downward band bending and the migration of Cu into the bulk by the built-in electric field. The subsequent oxidation leads to a passivation of VSe and InCu, and hence yields a reconversion of the conductivity type. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428096
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  • 2
    Electronic Resource
    Electronic Resource
    Adhesion at a granular surface (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1880-1885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adhesion of an ultrathin carbon nitride (CN) coating to the surface of a two-phase CoPt–SiO2 granular film heterogeneous at the 10 nm scale has been studied using nanoscratch techniques. The nanoscratch resistance was found to depend sensitively on the volume fraction of the two phases. Both nanoscratch experiments and complementary electron microscopy observations indicate that CN adheres much more strongly to the SiO2 matrix than to the CoPt granules resulting in enhanced tribological performance in SiO2-rich films. The relative weakness of the CN/CoPt interface is correlated to the absence of interfacial metal nitride formation. The adhesion of the CN coating to the granular surface, the intrinsic mechanical properties of the underlying granular film (nanoindentation hardness and modulus), and the vertical rms surface roughness of the granular layer are all fundamentally changed as the CoPt content reaches the percolation threshold. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1303764
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  • 3
    Electronic Resource
    Electronic Resource
    Space and time resolved temperature measurements in laser pulse-produced metal melts (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2534-2537 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A fast broadband pyrometer with a spatial resolution of 2 μm and an accuracy of 10% in temperature is described plus a calibration method suitable for liquid metals. The time resolution of temperature measurements is limited by the electronics rise time (3.5 ns) to 14 ns (10%–90% rise time) of a temperature change because of the nonlinear relation between electronic signal and temperature. The pyrometer was applied to determine the temperature of melts produced by focused nanosecond laser pulses in gold and iron films. Measured heating rates (1010–1011 K/s) and peak temperatures (3000 K) are correctly reproduced by numerical simulations for gold, but theoretical peak temperatures in iron were 1000 K in excess. The low actual temperature in iron can be explained by native oxides, decomposing during the laser pulse and thus dissipating energy. This effect may cause considerable differences between computed and actual temperatures during laser processing of thin metal films with unstable impurities. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148155
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  • 4
    Electronic Resource
    Electronic Resource
    A modified broad beam ion source for low-energy hydrogen implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1499-1504 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified broad beam ion source for low-energy hydrogen ion implantation of semiconductors is described. Based on a Kaufman type ion source two different solutions are presented: (a) an ion source with an extraction system consisting of two molybdenum grids with a low gas flow conductance reworked for hydrogen operation, and (b) a ten-grid mass separating ion beam system which enables the mass selection of H+, H2+, and H3+. The ion energy could be set in the range of 200–500 eV with a current density reaching from 1 to 100 μA/cm2. It is shown that at higher pressure the main ion created in the ion source is H3+ due to ion-molecule processes, whereas at lower pressure only H2+ and H+ are produced. Special consideration is given to the ion beam analysis of the two grid ion source operating in the 10−3 mbar range allowing to explain the different peak structures by the potential distribution across the ion source and different charge transfer processes. In addition, the analysis reveals neutral and ionized collision products in the ion beam. The ten-grid mass separating ion source could be operated in the 10−4 mbar range resulting in a nearly collision free ion beam which permits the generation of a mass separated hydrogen ion beam. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148786
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  • 5
    Electronic Resource
    Electronic Resource
    Struktur und Eigenschaften der Materie in Einzeldarstellungen. Band XXIII. Gruppentheorie der Eigenschwingungen von Punktsystemen. (1962)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 84 (1962), S. 3793-3793 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00878a058
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Thermocapillary flow excited by focused nanosecond laser pulses in contaminated thin liquid iron films'' [J. Appl. Phys. 78, 2037 (1995)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7427-7427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360788
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  • 7
    Electronic Resource
    Electronic Resource
    Thermocapillary flow excited by focused nanosecond laser pulses in contaminated thin liquid iron films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2037-2044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is established to determine surface tension and mechanisms of evaporation of liquid metals in a wide range of high temperatures. It is based on a combination of high-speed transmission electron microscopy imaging of flow in nanosecond laser pulse molten films and computer simulation. The technique was applied to iron films with native oxides to investigate the effects of surface active impurities in a melt with transient temperatures and gradients up to 4000 K and 5×108 K/m, respectively. Such melts show a shear flow with direction changing once or twice during 1–2 μs after a 20 ns laser pulse, which cannot be simulated using table values for the temperature coefficient of the surface tension and the vapor pressure. Instead, evaporation is negligible, and the flow of the liquid is mainly driven by a fast changing gradient of the surface tension caused by a time-varying distribution of temperature and dissolved surface active oxygen atoms. Current site coverage models, giving the surface tension as function of temperature and impurity content for static liquids, successfully can be applied to liquids moving on the nanosecond/micrometer scale, too. However, the number of active surface sites can be vastly reduced by short-lived oxide covers, e.g., in iron with native oxides down to 3.5% of the total number of surface sites. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360180
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  • 8
    Electronic Resource
    Electronic Resource
    Nicotinamide – biologic actions of an emerging cosmetic ingredient (2005)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 27 (2005), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Nicotinamide, the water-soluble amide of nicotinic acid, is a component of the two most important coenzymes – nicotinamide adenine dinucleotide and nicotinamide adenine dinucleotide phosphate. Thus nicotinamide is involved in numerous oxidation–reduction reactions in mammalian biological systems. Nicotinamide essentially acts as an antioxidant. Most effects are exerted via poly-adenosine diphosphate-ribose polymerase inhibition. Thus nicotinamide increasingly gains interest in the prevention and treatment of several skin diseases. It is well established in the systemic therapy of pellagra, a deficiency disease linked to nicotinic acid, but with respect to topical use there is still a need for further evidence with respect to its manifold potential uses. Currently, its local use is established in the care of acne-prone skin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-2494.2005.00266.x
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  • 9
    Electronic Resource
    Electronic Resource
    Experience effects on brain development: possible contributions to psychopathology (2003)
    Oxford, UK : Blackwell Publishing
    The @journal of child psychology and psychiatry 44 (2003), S. 0 
    Details
    ISSN: 1469-7610
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Researchers and clinicians are increasingly recognizing that psychological and psychiatric disorders are often developmentally progressive, and that diagnosis often represents a point along that progression that is defined largely by our abilities to detect symptoms. As a result, strategies that guide our searches for the root causes and etiologies of these disorders are beginning to change. This review describes interactions between genetics and experience that influence the development of psychopathologies. Following a discussion of normal brain development that highlights how specific cellular processes may be targeted by genetic or environmental factors, we focus on four disorders whose origins range from genetic (fragile X syndrome) to environmental (fetal alcohol syndrome) or a mixture of both factors (depression and schizophrenia). C.H. Waddington's canalization model (slightly modified) is used as a tool to conceptualize the interactive influences of genetics and experience in the development of these psychopathologies. Although this model was originally proposed to describe the ‘canalizing’ role of genetics in promoting normative development, it serves here to help visualize, for example, the effects of adverse (stressful) experience in the kindling model of depression, and the multiple etiologies that may underlie the development of schizophrenia. Waddington's model is also useful in understanding the canalizing influence of experience-based therapeutic approaches, which also likely bring about ‘organic’ changes in the brain. Finally, in light of increased evidence for the role of experience in the development and treatment of psychopathologies, we suggest that future strategies for identifying the underlying causes of these disorders be based less on the mechanisms of action of effective pharmacological treatments, and more on increased knowledge of the brain's cellular mechanisms of plastic change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1469-7610.t01-1-00102
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  • 10
    Electronic Resource
    Electronic Resource
    Measurement of the depth distribution of ion beam etching-induced damage in AlGaAs/GaAs multiple quantum well structure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect depth distribution caused by a 500 eV nitrogen ion beam etching (IBE) of an Al0.35Ga0.65As/GaAs multiple quantum well (MQW) structure was investigated by confocal photoluminescence (PL) measurements on a beveled section of the sample. The beveled section with an extremely small inclination angle necessary for the high depth resolution was fabricated by the IBE itself. Compared to other ion beam or plasma assisted etching processes reported, e.g., Ar-IBE, the 500 eV nitrogen IBE yields a very low defect density. A model including diffusion effects for the description of the profile gives a value of 4×10−15 cm2 /s for the defect diffusion coefficient. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119894
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