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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of C films formed on single-crystal Cu by ion implantation and laser annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351425
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  • 2
    Electronic Resource
    Electronic Resource
    MeV, self-ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2081-2086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage formed by 1.25 MeV, self-ions in Si at liquid nitrogen temperature was studied. A dominant feature of the damage for moderate ion fluences is the presence of isolated amorphous regions over the range of the ions. The microstructure of this damage is detailed and formation mechanisms discussed. The amorphous regions are shown to give rise to strain in the surrounding crystal lattice which varies with ion dose in a complicated manner. The annealing behavior of the damage was studied and two distinct, low-temperature stages observed. Different mechanisms are shown to be responsible for each stage including a transient mechanism at 300 °C initiated by the release of defects from damage clusters, and enhanced crystallization of amorphous Si at 400 °C due to lattice stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346561
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  • 3
    Electronic Resource
    Electronic Resource
    Ion mixing of III-V compound semiconductor layered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351079
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature mesotaxy of ion beam synthesized ErSi2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1853-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doses (7×1016–1.3×1017/cm2) of 170-keV Er+ ions were implanted into single-crystal Si at an implantation temperature of Ti=520 °C. During Er implantation ErSi2 crystallizes as coherent precipitates within a crystalline Si matrix. During the subsequent annealing at 800 °C a discontinuous buried layer of the single crystalline ErSi2 is formed. Implanted and annealed samples were subsequently reimplanted with 170-keV Er+ ions at 250〈Ti〈520 °C. The second implantation results in a mesotaxial growth of the previously formed buried single-crystal ErSi2 layer for implantation temperatures Ti(approximately-greater-than)300 °C where ion beam induced, defect mediated diffusion of Er atoms in the Si matrix occurs during the implantation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349504
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  • 5
    Electronic Resource
    Electronic Resource
    Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 564-567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (λ=0.249 μm, τ=24×10−9 s) in amorphous (7660-A(ring)-thick) and crystalline silicon layers were determined to be 0.16±0.02 and 0.75±0.05 J cm−2, respectively. The formation of fine- and large-polycrystalline regions was clearly identified in the amorphous silicon layers for energy densities below that needed for complete annealing. The role of explosive recrystallization in the formation of the fine polycrystalline region is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334738
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of hydrogen in the annealing environment on photoluminescence from Si nanoparticles in SiO2 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 396-401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of hydrogen in enhancing the photoluminescence (PL) yield observed from Si nanocrystals embedded in SiO2 has been studied. SiO2 thermal oxides and bulk fused silica samples have been implanted with Si and subsequently annealed in various ambients including hydrogen or deuterium forming gases (Ar+4%H2 or Ar+4%D2) or pure Ar. Results are presented for annealing at temperatures between 200 and 1100 °C. Depth and concentration profiles of H and D at various stages of processing have been measured using elastic recoil detection. Hydrogen or deuterium is observed in the bulk after annealing in forming gas but not after high temperature (1100 °C) anneals in Ar. The presence of hydrogen dramatically increases the broad PL band centered in the near infrared after annealing at 1100 °C but has almost no effect on the PL spectral distribution. Hydrogen is found to selectively trap in the region where Si nanocrystals are formed, consistent with a model of H passivating surface states at the Si/SiO2 interface that leads to enhanced PL. The thermal stability of the trapped H and the PL yield observed after a high temperature anneal have been studied. The hydrogen concentration and PL yield are unchanged for subsequent anneals up to 400 °C. However, above 400 °C the PL decreases and a more complicated H chemistry is evident. Similar concentrations of H or D are trapped after annealing in H2 or D2 forming gas; however, no differences in the PL yield or spectral distribution are observed, indicating that the electronic transitions resulting in luminescence are not dependent on the mass of the hydrogen species. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370699
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  • 7
    Electronic Resource
    Electronic Resource
    GaAs nanocrystals formed by sequential ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1876-1880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential ion implantation of As and Ga into SiO2 and α-Al2O3 followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361088
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  • 8
    Electronic Resource
    Electronic Resource
    Uniaxial lattice expansion of self-ion-implanted Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 243-245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice strain in self-ion-implanted Si is investigated. Under certain irradiation conditions, a unique strain field is shown to form over the range of the ions. This strain field is one-dimensional and expands the lattice along the direction normal to the surface of the crystal. This phenomena is investigated over a wide range of ion energy (100 keV and 1.25 MeV) and at different implantation temperatures. The presence of uniaxial strain is shown to correlate with a particular damage morphology in Si. This ion-induced morphology and the irradiation conditions under which it forms are discussed, as well as the mechanism which leads to uniaxial, lattice strain. Both ion channeling and x-ray diffraction analyses are used to characterize the strain field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103703
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  • 9
    Electronic Resource
    Electronic Resource
    Interferometric measurement of the pressure-enhanced crystallization rate of amorphous Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the pressure dependence of the solid phase epitaxial growth rate of self-implanted Si (100) by using the in situ time-resolved interferometric technique in a high-temperature and high-pressure diamond anvil cell. With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed provides a uniform temperature across the sample. At temperatures in the range of 530–550 °C and pressures up to 3.2 GPa (32 kbar), the growth rate is enhanced by up to a factor of 5 over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately −3.3 cm3/mole (−28% of the atomic volume). These results show a significantly weaker pressure dependence than does the previous work of Nygren et al. [Appl. Phys. Lett. 47, 232 (1985)], who found an activation volume of −8.7 cm3/mole. The implication of this measurement for the nature of the defects responsible for crystal growth is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101056
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1337-1339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin epitaxial layers of Ge-Si alloys have been formed on Si(100) substrates by steam oxidation of Ge-implanted samples. During the oxidation, the Ge is totally piled up ahead of the SiO2/Si interface. This segregation of Ge leads to the formation of a distinct, Ge-rich layer which is epitaxial with the underlying Si. The thickness of the Ge layer is dependent on the implantation dose. This layer and its two bounding interfaces with the oxide and Si are characterized as a function of the implantation dose and energy, using Rutherford backscattering and high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98671
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